PHILIPS BLV2047

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D372
BLV2047
UHF power transistor
Product specification
Supersedes data of 1999 Jan 28
1999 Jun 09
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
PINNING - SOT468A
FEATURES
• Emitter ballasting resistors for optimum
temperature profile
PIN
• Gold metallization ensures excellent reliability
• Internal input and output matching for easy design of
wideband circuits
DESCRIPTION
1
collector
2
base
3
emitter; connected to flange
• AlN substrate package for environmental safety.
APPLICATIONS
1
handbook, halfpage
• Common emitter class-AB operation for PCN
(Personal Communication Networks) and
PCS (Personal Communication Services) base station
applications in the 1800 to 2000 MHz frequency range.
3
2
Top view
MBK200
DESCRIPTION
NPN silicon planar power transistor in a 2-lead SOT468A
flange package with ceramic cap. The emitter is connected
to the flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
dim
(dBc)
CW, class-AB
2000
26
60
≥8.5
≥40
−
2-tone, class-AB
f1 = 2000.0; f2 = 2000.1
26
60 (PEP)
≥9
≥33
≤−30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
65
V
VCEO
collector-emitter voltage
open base
−
27
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
10
A
Ptot
total power dissipation
Tmb = 25 °C
−
270
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
1999 Jun 09
2
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Ptot = 270 W; Tmb = 25 °C; note 1
0.65
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.25
K/W
Note
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 40 mA
65
−
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 120 mA
27
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 40 mA
3
−
−
V
mA
ICES
collector leakage current
VCE = 26 V; VBE = 0
−
−
8
hFE
DC current gain
VCE = 10 V; IC = 4 A
45
−
100
Cc
collector capacitance
VCB = 26 V; IE = ie = 0; f = 1 MHz;
note 1
−
72
−
pF
Cre
feedback capacitance
VCE = 26 V; IC = 0; f = 1 MHz
−
41
−
pF
Note
1. Capacitance of die only.
MBK396
120
MBK397
160
handbook, halfpage
handbook, halfpage
Cre
(pF)
hFE
120
80
80
40
40
0
0
0
2
4
6
8
0
10
10
IC (A)
VCE = 10 V.
f = 1 MHz.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
1999 Jun 09
3
20
VCB (V)
30
Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
dim
(dBc)
CW, class-AB
2000
26
300
60
≥8.5
≥40
−
2-tone, class-AB
f1 = 2000.0
f2 = 2000.1
26
300
60 (PEP)
≥9
≥33
≤−30
CDMA, class-AB
2000
26
500
12.5
typ. 9
typ. 22
≤−46(1)
Note
1. CDMA test signal with peak to average ratio of 11.9 dB. Adjacent Channel Power (ACP) is measured at ±885 kHz
offset from the centre of the channel (2000 MHz) using a spectrum analyzer with the resolution set to 30 kHz.
Ruggedness in class-AB operation
The BLV2047 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the
following conditions: f1 = 2000.0 MHz; f2 = 2000.1 MHz; VCE = 26 V; ICQ = 300 mA; PL = 60 W (PEP); Tmb = 25 °C.
MBK398
12
p
(dB)
10
handbook, halfpage
PL
(W)
80
(%)
50
Gp
MBK399
100
60
ηC
handbook,
G halfpage
(1)
(2)
(3)
8
40
ηC
60
6
30
4
20
2
10
40
0
0
20
40
60
80
20
0
0
100
PL (W)
0
4
VCE = 26 V; ICQ = 300 mA; f = 2000 MHz.
ICQ = 300 mA; f = 2000 MHz.
(1) VCE = 28 V.
(2) VCE = 26 V.
(3) VCE = 24 V.
Fig.4
Fig.5
Power gain and collector efficiency as a
function of load power; typical values.
1999 Jun 09
4
8
PD (W)
12
Load power as a function of drive power;
typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
MBK400
10
handbook, halfpage
Gp
(dB)
8
MBK401
0
50
handbook, halfpage
ηC
(%)
Gp
d3
(dBc)
40
−10
30
−20
ηC
6
(1)
(2)
−30
20
4
(3)
−40
10
2
0
0
20
40
60
−50
0
80
100
PL (PEP)(W)
20
40
60
80
PL (PEP)(W)
VCE = 26 V; f1 = 2000 MHz; f2 = 2000.1 MHz.
(1) ICQ = 100 mA.
(2) ICQ = 300 mA.
(3) ICQ = 500 mA.
VCE = 26 V; ICQ = 300 mA; f1 = 2000 MHz; f2 = 2000.1 MHz.
Fig.6
0
Power gain and collector efficiency as
functions of peak envelope load power;
typical values.
Fig.7
Intermodulation products as a function of
peak envelope load power; typical values.
MBK402
0
MBK925
0
handbook, halfpage
handbook, halfpage
dim
(dBc)
ACP
(dBc)
−20
−20
d3
d5
−40
−40
d7
−60
0
20
40
−60
60
80
PL (PEP)(W)
0
4
8
12
16
20
PL (W)
VCE = 26 V; ICQ = 300 mA; f1 = 2000 MHz; f2 = 2000.1 MHz.
VCE = 26 V; ICQ = 500 mA.
Measured at 885 kHz offset with 30 kHz bandwidth.
CDMA test signal with 11.9 dB peak to average ratio.
Fig.8
Fig.9
Intermodulation products as a function of
peak envelope load power; typical values.
1999 Jun 09
5
Adjacent channel power as a function of
load power; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
List of components (see Figs 10 and 11)
COMPONENT
DESCRIPTION
VALUE
C1, C8
multilayer ceramic chip capacitor; note 1
22 pF
C2
Tekelec variable capacitor; type 37291
0.8 to 8 pF
C3, C4
Tekelec variable capacitor; type 37271
0.6 to 4.5 pF
DIMENSIONS
C5
multilayer ceramic chip capacitor, note 2
22 pF
C6, C12
tantalum SMD capacitor
10 µF, 35 V
C7
feedthrough capacitor
1.5 nF
C9
multilayer ceramic chip capacitor, note 3
13 pF
C10
multilayer ceramic chip capacitor, note 3
10 nF
C11
feedthrough capacitor
3.3 nF
L1
stripline; note 4
18.8 Ω
length 6.1 mm;
width 3.9 mm
L2
stripline; note 4
21.9 Ω
length 5 mm;
width 3.2 mm
L3
stripline; note 4
13 Ω
length 1.4 mm;
width 6.1 mm
L4
stripline; note 4
4.5 Ω
length 6.6 mm;
width 20.2 mm
L5, L14, L15
grade 4B1 ferroxcube chip-bead
L6
4 turns enamelled 1 mm copper wire
30 nH
int.dia. 3 mm;
length 7 mm
L7
stripline; note 4
7.3 Ω
length 4 mm;
width 11.8 mm
L8
stripline; note 4
6.8 Ω
length 4 mm;
width 12.8 mm
L9
stripline; note 4
43.7 Ω
length 12.5 mm;
width 1 mm
L10
stripline; note 4
5.6 Ω
length 8.5 mm;
width 15.9 mm
L11
stripline; note 4
18.8 Ω
length 1 mm;
width 3.9 mm
L12
stripline; note 4
53.3 Ω
length 3.4 mm;
width 0.8 mm
L13
stripline; note 4
17.4 Ω
length 6.5 mm;
width 4.3 mm
R1
standard chip resistor
10 Ω
type 0603
CATALOGUE NO.
4322 020 34420
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 175B or capacitor of same quality.
3. American Technical Ceramics type 100B or capacitor of same quality.
4. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 6.15);
thickness 0.64 mm.
1999 Jun 09
6
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
40
handbook, full pagewidth
40
50
+Vbias
+VCE
R1
L5
C6
50 Ω
input
C7
C8
C10
L6
L9
C9
C1
L1
L2 L3 L4
L7
L8 L10 L11
C2
L15
L14
L12 L13
C11
C12
50 Ω
output
C5
C4
C3
MBK406
Dimensions in mm.
The components are situated on one side of the copper-clad Teflon board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.10 Component layout for 2000 MHz class-AB test circuit.
1999 Jun 09
7
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
L15
handbook, full pagewidth
L14
L5
+Vbias
C7
C9
+VCE
R1
C10
C12
C8
C6
L9
L6
L8
L4
50 Ω
input
C11
C1
L3
L1 L2
L7
L10
L12
L11 L13
C5
50 Ω
output
DUT
C3
C2
C4
MBK405
For CDMA measurements:
Replace L5, C7 and C11 by a bridging wire.
Change L6 from 6 turns to 2 turns (same diameter).
Add 4.7 µF, 50 V tantalum capacitor to C12.
Add 100 pF ATC type 100A capacitor to C8.
Fig.11 Class-AB test circuit for 2000 MHz.
1999 Jun 09
8
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
Scattering parameters: VCE = 26 V; IC = 1 A
S11
f
(MHz)
S21
S12
S22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
1500
0.982
173.3
0.169
131.8
0.031
106.4
0.967
174.6
1600
0.970
172.0
0.227
126.1
0.035
96.0
0.953
174.0
1700
0.947
170.4
0.349
114.3
0.037
93.3
0.929
173.8
1800
0.870
167.5
0.633
85.8
0.036
74.7
0.879
174.2
1850
0.779
169.9
0.838
59.5
0.034
60.4
0.845
178.0
1900
0.775
179.3
0.833
22.7
0.018
47.4
0.902
−177.4
1950
0.863
−178.0
0.644
−6.9
0.011
103.7
0.967
−178.7
2000
0.913
−179.4
0.456
−24.5
0.018
121.2
0.990
179.3
2100
0.950
178.0
0.285
−40.8
0.028
114.7
0.995
176.9
2200
0.955
176.4
0.190
−54.0
0.031
115.2
0.987
175.5
2300
0.955
175.0
0.145
−53.6
0.034
114.7
0.983
175.0
2400
0.948
173.7
0.162
−60.4
0.036
116.7
0.975
174.4
2500
0.937
172.4
0.143
−84.2
0.038
116.8
0.973
173.9
MBK403
5
MBK404
3
handbook, halfpage
handbook, halfpage
ZL
Zi
(Ω)
RL
(Ω)
2
ri
4
1
3
0
2
xi
−1
1
0
1700
XL
−2
1800
1900
f (MHz)
−3
1700
2000
1800
1900
f (MHz)
2000
VCE = 26 V; ICQ = 300 mA; PL = 60 W; Tmb = 25 °C.
VCE = 26 V; ICQ = 300 mA; PL = 60 W; Tmb = 25 °C.
Fig.12 Input impedance as a function of frequency
(series components); typical values.
Fig.13 Load impedance as a function of frequency
(series components); typical values.
1999 Jun 09
9
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
PACKAGE OUTLINE
Flanged ceramic (AIN) package; 2 mounting holes; 2 leads
SOT468A
D
A
F
3
D1
U1
B
q
C
c
1
H
U2
p
E1
E
w1 M A B
A
2
w2 M C
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
mm
5.23
4.62
11.81
11.58
0.15
0.10
15.39
15,09
15.37
15,11
inches
0.206
0.182
0.465
0.455
0.006
0.004
0.606
0.594
0.605
0.595
OUTLINE
VERSION
F
H
p
Q
q
U1
U2
w1
w2
10.26 10.29
10.06 10.03
1.65
1.60
16.74
16.48
3.30
3.05
2.21
2.06
20.32
25.53
25.27
9.91
9.65
0.254
0.508
0.404 0.405
0.396 0.395
0.065
0.063
0.659
0.649
0.130
0.120
0.087
0.081
0.800
1.005
0.995
0.390
0.380
0.01
0.02
E1
E
REFERENCES
IEC
JEDEC
EIAJ
SOT468A
1999 Jun 09
EUROPEAN
PROJECTION
ISSUE DATE
97-12-24
10
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 09
11
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© Philips Electronics N.V. 1999
SCA 65
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Printed in The Netherlands
125002/06/pp12
Date of release: 1999 Jun 09
Document order number:
9397 750 05856