Order this document by MJF6107/D SEMICONDUCTOR TECHNICAL DATA For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • • • • • • Electrically Similar to the Popular 2N6107 70 VCEO(sus) 7 A Rated Collector Current No Isolating Washers Required Reduced System Cost High Current Gain–Bandwidth Product fT = 4 MHz (Min) Ca, IC = 500 mAdc • UL Recognized, File #E69369, to 3500 VRMS Isolation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CASE 221D–02 TO–220 TYPE MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Symbol Value Unit VCEO 70 Vdc VCB 80 Vdc VEB 5 Vdc VISOL 4500 3500 1500 VRMS Collector Current — Continuous Peak IC 7 10 Adc Base Current IB 3 Adc Total Power Dissipation* @ TC = 25_C Derate above 25_C PD 34 0.27 Watts W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2 0.016 Watts W/_C TJ, Tstg – 65 to + 150 _C Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 62.5 _C/W Thermal Resistance, Junction to Case* RθJC 3.7 _C/W TL 260 _C RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25_C) Test No. 1 Per Fig. 13 Test No. 2 Per Fig. 14 Test No. 3 Per Fig. 15 Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Lead Temperature for Soldering Purpose * Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs. (1) Proper strike and creepage distance must be provided. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJF6107 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 70 — Vdc Collector Cutoff Current (VCE = 80 Vdc, IB = 0) ICES — 1 µAdc Collector Cutoff Current (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) ICEX — 1 µAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO — 1 µAdc hFE 30 5 90 — — Collector–Emitter Saturation Voltage (IC = 7 Adc, IB = 3 Adc) VCE(sat) — 2 Vdc Base–Emitter On Voltage (IC = 7 Adc, VCE = 4 Vdc) VBE(on) — 2 Vdc fT 4 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob — 250 pF Small–Signal Current Gain (IC = 0.5 Adc, VCE = 4 Vdc, f = 50 kHz) hfe 20 — — OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) ON CHARACTERISTICS (1) DC Current Gain (IC = 2 Adc, VCE = 4 Vdc) DC Current Gain (IC = 7 Adc, VCE = 4 Vdc) DYNAMIC CHARACTERISTICS Current Gain–Bandwidth Product (2) (IC = 500 mAdc, VCE = 4 Vdc, ftest = 1 MHz) NOTES: 1. Pulse Test: Pulse Width 2. fT = |hfe| • ftest. v 300 µs, Duty Cycle v 2%. 25 µs +11 V VCC + 30 V 2 RC 1 t, TIME ( µs) 0 D1 51 –9 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.7 0.5 SCOPE RB –4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA TJ = 25°C VCC = 30 V IC/IB = 10 0.3 0.2 tr 0.1 0.07 0.05 td @ VBE(off) ≈ 5 V 0.03 0.02 0.07 0.1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 1. Switching Time Test Circuit 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMP) 5 3 7 Figure 2. Turn–On Time 1 0.5 0.3 0.2 0.1 SINGLE PULSE RθJC(t) = r(t) RθJC TJ(pk) – TC = P(pk) RθJC(t) 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 50 20 30 t, TIME (ms) 100 200 300 500 1K 2K 3K 5K 10K Figure 3. Thermal Response 2 Motorola Bipolar Power Transistor Device Data MJF6107 IC, COLLECTOR CURRENT (AMPS) 15 10 0.1 ms 7 5 50 µs 0.5 ms 3 2 dc 1 0.7 0.5 CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) 0.3 0.2 0.15 1 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v 2 3 5 7 10 20 30 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 70 100 Figure 4. Active–Region Safe Operating Area 5 300 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 2 t, TIME ( µs) ts TJ = 25°C 200 C, CAPACITANCE (pF) 3 1 0.7 0.5 0.3 tf 0.2 Cib 100 70 Cob 50 0.1 0.07 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 30 0.5 7 1 2 3 5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Turn–Off Time 100 70 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 200 VCE = 2 V TJ = 150°C 25°C 30 20 10 7 5 0.07 0.1 – 55°C 0.2 0.3 0.5 0.7 1 50 Figure 6. Capacitance 500 300 30 2 3 5 7 2 TJ = 25°C 1.6 IC = 1 A 2.5 A 5A 1.2 0.8 0.4 0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA) Figure 7. DC Current Gain Figure 8. Collector Saturation Region Motorola Bipolar Power Transistor Device Data 1000 3 MJF6107 θV, TEMPERATURE COEFFICIENTS (mV/°C) 2 TJ = 25°C V, VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4 V 0.4 VCE(sat) = IC/IB = 10 0 0.07 0.1 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 + 2.5 + 1.5 +1 + 0.5 0 101 TJ = 150°C 100°C 25°C 100 10–1 10–2 IC = ICES REVERSE FORWARD 10–3 – 0.3 – 0.2 – 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 + 0.7 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 11. Collector Cut–Off Region 4 – 55°C to + 25°C –1 + 25°C to +150°C θVB FOR VBE – 1.5 – 55°C to + 25°C –2 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMP) 3 5 7 Figure 10. Temperature Coefficients R BE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS) IC, COLLECTOR CURRENT ( µ A) 102 *θVC FOR VCE(sat) – 0.5 Figure 9. “On” Voltages VCE = 30 V + 25°C to +150°C – 2.5 0.07 0.1 7 103 *APPLIES FOR IC/IB < hFE/4 +2 10 M VCE = 30 V 1M IC = 10 x ICES IC = 2 x ICES 100 k IC = ICES 10 k 1k 0.1 k 20 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 11) 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) 140 160 Figure 12. Effects of Base–Emitter Resistance Motorola Bipolar Power Transistor Device Data MJF6107 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE 0.107” MIN LEADS 0.107” MIN LEADS HEATSINK HEATSINK 0.110” MIN Figure 13. Clip Mounting Position for Isolation Test Number 1 Figure 14. Clip Mounting Position for Isolation Test Number 2 Figure 15. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION 4–40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 16. Typical Mounting Techniques* Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. Motorola Bipolar Power Transistor Device Data 5 MJF6107 PACKAGE DIMENSIONS SEATING PLANE –T– –B– F C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. U A 1 2 3 H –Y– K G N L D J R 3 PL 0.25 (0.010) M B M Y DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 221D–02 TO–220 TYPE ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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