Order this document by BUT11AF/D SEMICONDUCTOR TECHNICAL DATA For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capability and low saturation voltage. • • • • • • • POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS 1000 Volt VCES Rating Low Base Drive Requirements Isolated Overmold Package Improved System Efficiency No Isolating Washers Required Reduced System Cost High Isolation Voltage Capability (4500 VRMS) CASE 221D–02 TO–220 TYPE MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Sustaining Voltage Rating VCEO(sus) 450 Vdc Collector–Emitter Breakdown Voltage VCES 1000 Vdc Emitter–Base Voltage VEBO 9.0 Vdc RMS Isolation Voltage (For 1 sec, Per Figure 7 VISOL1 4500 TA = 25°C, Rel. Humidity < 30%) Per Figure 8 VISOL2 3500 Per Figure 9 V VISOL3 2500 Collector Current — Continuous Collector Current — Pulsed (1) IC ICM 5.0 10 Adc Base Current — Continuous Base Current — Pulsed (1) IB IBM 2.0 4.0 Adc Total Power Dissipation @ TC = 25°C* Derated above 25°C PD 40 0.32 Watts W/°C TJ, Tstg – 65 to +150 °C RθJC 3.125 °C/W TL 260 °C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case* Maximum Lead Temperature for soldering purposes 1/8″ from case for 5 sec. (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. * Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink, thermal grease applied, and a mounting torque of 6 to 8 in . lbs. Full Pak is a registered trademark of Motorola Inc. REV 2 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 BUT11AF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 450 – – Vdc – – – – 1.0 2.0 OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage (Figures 1 & 2) (IC = 100 mAdc, IB = 0, L = 25 µH) Collector Cutoff Current (VCE = 1000 Vdc, VBE = 0) (VCE = 1000 Vdc, VBE = 0, TJ = 125°C) ICES mAdc Emitter-Base Leakage (VEB = 9.0 Vdc, IC = 0) IEBO – – 10 mAdc Collector-Emitter Saturation Voltage (IC = 2.5 Adc, IB = 0.5 Adc) VCE(sat) – – 1.5 Vdc Base-Emitter Saturation Voltage (IC = 2.5 Adc, IB = 0.5 Adc) VBE(sat) – – 1.5 Vdc hFE 10 – – – – – Cc-hs – 15 – pF ts – 1100 1400 ns tfi – 80 150 ts – 1200 1500 tfi – 140 300 ton – – 1000 ts – – 4000 tf – – 800 ON CHARACTERISTICS (1) DC Current Gain (IC = 5.0 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Insulation Capacitance (Collector to External Heatsink) SWITCHING CHARACTERISTICS Inductive Load (Figures 3 & 4) Storage TJ = 25°C Fall Time Storage IC = 2.5 Adc, IB1 = 0.5 Adc TJ = 100°C Fall Time Resistive Load (Figures 5 & 6) Turn-On Time Storage Time IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc Fall Time ns (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. +50 V 100 – 200 Ω 250 L 200 VERT. OSCILLOSCOPE IC (mA) VIN 0 100 tp T 0 MIN VCEO(sus) VCE (V) Figure 1. Oscilloscope Display for Sustaining Voltage 2 HOR. OSCILLOSCOPE 1 Ω Figure 2. Test Circuit for VCEO(sus) Motorola Bipolar Power Transistor Device Data BUT11AF tr VCC IB on 90% IB 10% t RL VIN 0 IB off RB IC on 90% T.U.T. tp T IC VCC = 250 V VIN = – 6 to +8 V tp = 20 µs tp = 0.01 T 10% tf td ton Figure 3. Test Circuit Resistive Load t ts toff Figure 4. Switching Times Waveforms with Resistive Load VCC tr IB1 90% IB LC 10% t VCL +IB1 LB –VBE IB2 T.U.T. IC on 90% 7Z89211.2 VCL = 300 V VCC = 30 V VEB = 5 V LB = 1 µH VCL = 200 µH Figure 5. Test Circuit Inductive Load Motorola Bipolar Power Transistor Device Data IC 10% tf ts toff Figure 6. Switching Times Waveforms with Inductive Load 3 BUT11AF TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK MOUNTED FULLY ISOLATED PACKAGE 0.107″ MIN MOUNTED FULLY ISOLATED PACKAGE LEADS LEADS HEATSINK HEATSINK 0.107″ MIN 0.110″ MIN Figure 7. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 8. Clip Mounting Position for Isolation Test Number 2 Figure 9. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION 4–40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 10. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. 4 Motorola Bipolar Power Transistor Device Data BUT11AF PACKAGE DIMENSIONS –T– –B– F SEATING PLANE C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. U A 1 2 3 H –Y– K G N L D J R 3 PL 0.25 (0.010) M B M DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 Y STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 221D–02 TO–220 TYPE ISSUE D Motorola Bipolar Power Transistor Device Data 5 BUT11AF Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *BUT11AF/D* BUT11AF/D