DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES • High efficiency • Very high gain • Internal pre-matched input PIN SYMBOL DESCRIPTION 1, 8 b base 2, 4, 5, 7 e emitter 3, 6 c collector • Low supply voltage. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation for the 900 MHz communication band. 5 8 handbook, halfpage DESCRIPTION 1 NPN silicon planar epitaxial power transistor encapsulated in a SOT96-1 (SO8) plastic SMD package. 4 Top view MBK187 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) CW, class-AB 900 4.8 1.2 Gp (dB) ηC (%) ≥11 ≥55 typ. 13 typ. 63 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 16 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 500 mA Ptot total power dissipation − 2.9 W Tstg storage temperature Ts = 60 °C; VCE ≤ 6.5 V; note 1 −65 +150 °C Tj operating junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. 1997 Oct 14 2 Philips Semiconductors Product specification UHF power transistor BLT71/8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to soldering point Rth j-s Pdis = 2.9 W; Ts = 60 °C; note 1 MAX. UNIT 40 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.5 mA 16 V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 8 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 2.5 − V ICES collector leakage current VCE = 8 V; VBE = 0 − 0.1 mA hFE DC current gain VCE = 5 V; IC = 100 mA 25 − Cc collector capacitance VCB = 4.8 V; IE = ie = 0; f = 1 MHz − 7 pF Cre feedback capacitance VCE = 4.8 V; IC = 0; f = 1 MHz − 5 pF MBK263 1 V MLD131 150 handbook, halfpage handbook, halfpage IC (A) h FE 100 (1) 50 10−1 −1 10 1 10 VCE (V) 0 102 0 200 400 600 800 IC (mA) VCE = 4.8 V. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.001. Ts = 115 °C. Fig.3 Fig.2 DC SOAR. 1997 Oct 14 3 DC current gain as a function of collector current; typical values. Philips Semiconductors Product specification UHF power transistor BLT71/8 APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) CW, class-AB 900 4.8 3 1.2 Gp (dB) ηC (%) ≥11 ≥55 typ. 13 typ. 63 Ruggedness in class-AB operation The BLT71/8 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the following conditions: f = 900 MHz; VCE = 6.5 V; ICQ = 3 mA; PL = 1.2 W; Ts = 60 °C. MGD192 MGD191 80 16 Gp (dB) handbook, halfpage ηC 2.0 PL (W) handbook, halfpage ηC (%) 1.6 12 Gp 60 1.2 40 8 0.8 20 4 0.4 0 0 0.4 0.8 1.2 0 1.6 2.0 PL (W) 0 0 50 100 VCE = 4.8 V; ICQ = 3 mA; f = 900 MHz. VCE = 4.8 V; ICQ = 3 mA; f = 900 MHz. Fig.4 Fig.5 Power gain and collector efficiency as functions of load power; typical values. 1997 Oct 14 4 150 200 PIN (mW) Load power as a function of input power; typical values. Philips Semiconductors Product specification UHF power transistor handbook, full pagewidth BLT71/8 Vbias = 24 V VC = 4.8 V R1 C16 R2 C14 L13 R3 L14 R4 TR2 50 Ω input C15 L12 L6 C13 C3 L1 C1 L2 L3 C5 L11 L4 L5 C9 L7 C11 L8 L9 C12 L10 50 Ω output TR1 C2 C4 D.U.T. BLT71/8 C6 C7 C8 C10 MBK267 Fig.6 Class-AB test circuit at f = 900 MHz. 1997 Oct 14 5 Philips Semiconductors Product specification UHF power transistor BLT71/8 140 handbook, full pagewidth 80 plated througholes fixing screws Vb VC C14 C16 TR2 R1 L13 R3 L14 L11 C13 C1 C3 L3 L2 L12 C5 L1 C2 R4 C15 R2 L4 C4 L5 L6 C6 L7 C7 C9 C11 C12 L10 L8 C8 C10 L9 MBK266 Dimensions in mm The components are situated on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.7 Printed-circuit board and component lay-out for the 900 MHz class-AB test circuit. 1997 Oct 14 6 Philips Semiconductors Product specification UHF power transistor BLT71/8 List of components (see Figs 6 and 7). COMPONENT DESCRIPTION VALUE CATALOGUE NO. DIMENSIONS C1, C12, C13, C15 multilayer ceramic chip capacitor; note 1 120 pF C2, C4, C8, C10 Giga-Trim capacitor; note 2 0.6 to 4.5 pF C3 multilayer ceramic chip capacitor; note 1 4.7 pF C5 multilayer ceramic chip capacitor; note 1 5.6 pF C6 multilayer ceramic chip capacitor; note 1 3.9 pF C7 multilayer ceramic chip capacitor; note 1 6.8 pF C9 multilayer ceramic chip capacitor; note 1 7.5 pF C11 multilayer ceramic chip capacitor; note 1 5.1 pF C14, C16 multilayer ceramic chip capacitor; note 1 10 nF L1, L10 stripline; note 3 50 Ω 10 x 2.4 mm L2 stripline; note 3 50 Ω 2 x 2.4 mm L3 stripline; note 3 50 Ω 30.4 x 2.4 mm L4 stripline; note 3 50 Ω 17.4 x 2.4 mm L5 stripline; note 3 50 Ω 6.8 x 2.4 mm L6 stripline; note 3 50 Ω 8 x 2.4 mm L7 stripline; note 3 50 Ω 19 x 2.4 mm L8 stripline; note 3 50 Ω 28 x 2.4 mm L9 stripline; note 3 50 Ω 1.6 x 2.4 mm L11 10 turns 1 mm enamelled copper wire 140 nH int. dia. = 4 mm; lead 1 = 2.5 mm; lead 2 = 11 mm L12 2 turns 1 mm enamelled copper wire 60 nH int. dia. = 2 mm; leads = 2 x 7.5 mm L13, L14 4S2 wideband RF choke R1 metal film resistor 1.4 kΩ; 0.6 W 2322 156 11402 R2, R3, R4 metal film resistor 10 Ω; 0.6 W 2322 156 11009 TR1 device under test BLT71/8 TR2 NPN transistor BD139 4330 030 36301 9330 912 20112 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. Tekelec Giga-trim, type 37271. 3. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr = 2.2); thickness 0.79 mm, thickness of the copper sheet 2 x 35 µm. 1997 Oct 14 7 Philips Semiconductors Product specification UHF power transistor BLT71/8 MBK264 12 MBK265 10 ZL handbook, halfpage handbook, halfpage Zi (Ω) (Ω) 8 ri RL 8 6 xi 4 4 XL 2 0 800 850 900 950 f (MHz) 0 800 1000 850 900 950 f (MHz) VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C. VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C. Fig.8 Fig.9 Input impedance as a function of frequency (series components); typical values. Load impedance as a function of frequency (series components); typical values. MGD195 23.4 handbook, halfpage 16 1000 handbook, halfpage Gp (dB) 12 8 Zi ZL 4 0 850 Zi 900 950 f (MHz) 1000 ZL MGD196 VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C. Dimensions in mm. Fig.10 Power gain as a function of frequency (series components); typical values. Fig.11 RF test print and definition of transistor impedance. 1997 Oct 14 8 Philips Semiconductors Product specification UHF power transistor BLT71/8 PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024 inches 0.010 0.057 0.069 0.004 0.049 0.01 0.01 0.028 0.004 0.012 θ Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03S MS-012AA 1997 Oct 14 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-02-04 97-05-22 9 o 8 0o Philips Semiconductors Product specification UHF power transistor BLT71/8 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Oct 14 10 Philips Semiconductors Product specification UHF power transistor BLT71/8 NOTES 1997 Oct 14 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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