ETC BSP254A/RA

DISCRETE SEMICONDUCTORS
DATA SHEET
BSP254; BSP254A
P-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
FEATURES
BSP254; BSP254A
QUICK REFERENCE DATA
• Direct interface to C-MOS, TTL,
etc.
SYMBOL
PARAMETER
−
−
−250
V
open drain
−
−
±20
V
ID = −200 mA;
VDS = −25V
100
200
−
mS
drain current (DC)
−
−
−0.2
A
RDS(on)
drain-source
VGS = −10 V;
on-state resistance ID = −200 mA
−
10
15
Ω
Ptot
total power
dissipation
Tamb = 25 °C
−
−
1
W
VDS
drain-source
voltage
• No secondary breakdown.
VGSO
gate-source
voltage
DESCRIPTION
 Yfs
forward transfer
admittance
ID
• High-speed switching
P-channel vertical D-MOS transistor
in a TO-92 variant envelope and
intended for use as a line current
interruptor in relay, high-speed and
line transformer drivers.
CONDITIONS MIN. TYP. MAX. UNIT
PINNING - TO-92 variant BSP254
PIN
DESCRIPTION
1
gate
2
drain
3
source
d
handbook, halfpage
1
2
3
g
PINNING - TO-92 variant BSP254A
PIN
MAM147
DESCRIPTION
1
source
2
gate
3
drain
April 1995
s
Fig.1 Simplified outline and symbol.
2
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
250
V
open drain
−
20
V
drain current
DC
−
0.2
A
drain current
peak value
−
0.6
A
Ptot
total power dissipation
Tamb = 25 °C (note 1)
−
1
W
Tstg
storage temperature range
−65
+150
°C
Tj
junction temperature
−
150
°C
−VDS
drain-source voltage
V
gate-source voltage
−ID
−IDM
GSO
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
from junction to ambient (note 1)
Note
1. Transistor mounted on printed circuit board, maximum lead length 4 mm,
mounting pad for drain lead minimum 10 mm x 10 mm.
Fig.2 Power derating curve.
April 1995
3
MAX.
125
UNIT
K/W
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−V(BR)DSS
drain-source breakdown voltage
−VGS = 0
−ID = 10 µA
250
−
−
V
−IDSS
drain-source leakage current
−VDS = 200 V
VGS = 0
−
−
1
µA
±IGSS
gate-source leakage current
±VGS = 20 V
VDS = 0
−
−
100
nA
−VGS(th)
gate-source threshold voltage
VGS = VDS
−ID = 1 mA
0.8
−
2.8
V
RDS(on)
drain-source on-resistance
−VGS = 10 V
−ID = 200 mA;
−
10
15
Ω
 Yfs
transfer admittance
−VDS = 25 V
−ID = 200 mA
100
200
−
mS
Ciss
input capacitance
note 1
−
65
90
pF
Coss
output capacitance
note 1
−
20
30
pF
Crss
feedback capacitance
note 1
−
6
15
pF
ton
turn-on time
note 2
−
5
10
ns
toff
turn-off time
note 2
−
20
30
ns
Notes
1. Measured at f = 1 MHz; −VDS = 25 V; VGS = 0.
2. −VGS = 0 to 10 V; −ID = 250 mA; −VDD = 50 V.
Fig.3 Switching times test circuit.
April 1995
Fig.4 Input and output waveforms.
4
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
Fig.5 Typical output characteristics; Tj = 25 °C.
Fig.7
April 1995
BSP254; BSP254A
Fig.6
Typical on-resistance as a function of drain
current, Tj = 25 °C.
Fig.8
5
Typical transfer characteristic; VDS = −10 V;
Tj = 25 °C.
Typical capacitances as a function of
drain-source voltage; VGS = 0; f = 1 MHz;
Tj = 25 °C.
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
Fig.9
April 1995
BSP254; BSP254A
Fig.10
6
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
PACKAGE OUTLINES
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
L2
E
d
A
L
b
1
e1
2
e
D
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
max
L2
max
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
2.5
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54 variant
April 1995
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
7
EUROPEAN
PROJECTION
ISSUE DATE
97-04-14
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
8
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
NOTES
April 1995
9
BSP254; BSP254A
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
NOTES
April 1995
10
BSP254; BSP254A
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
NOTES
April 1995
11
BSP254; BSP254A
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© Philips Electronics N.V. 1997
SCA54
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137107/00/01/pp12
Date of release: April 1995
Document order number:
9397 750 02484