ETC BSPD30N08S2-22

SPD30N08S2-22
OptiMOSâ Power-Transistor
Product Summary
Feature
VDS
• N-Channel
75
R DS(on)
• Enhancement mode
ID
• 175°C operating temperature
V
21.5
mΩ
30
A
P- TO252 -3-11
• Avalanche rated
• dv/dt rated
Type
SPD30N08S2-22
Package
Ordering Code
P- TO252 -3-11 Q67060-S7413
Marking
2N0822
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Value
Unit
A
TC=25°C
30
TC=100°C
30
ID puls
120
EAS
240
Repetitive avalanche energy, limited by Tjmax 2)
EAR
14
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
136
W
-55... +175
°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
mJ
ID =30 A , VDD=25V, RGS =25Ω
kV/µs
IS =30A, VDS=60, di/dt=200A/µs, Tjmax =175°C
TC=25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
55/175/56
Page 1
2002-06-17
SPD30N08S2-22
Thermal Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
0.7
1.1
Thermal resistance, junction - ambient, leaded
RthJA
-
-
100
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
75
@ 6 cm 2 cooling area 3)
-
-
50
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
75
-
-
VGS(th)
2.1
3
4
Static Characteristics
Drain-source breakdown voltage
V
VGS =0V, ID =1mA
Gate threshold voltage, VGS = VDS
ID =80µA
Zero gate voltage drain current
µA
IDSS
VDS =75V, VGS =0V, Tj=25°C
-
0.01
1
VDS =75V, VGS =0V, Tj=125°C
-
1
100
IGSS
-
1
100
nA
RDS(on)
-
16.7
21.5
mΩ
Gate-source leakage current
VGS =20V, VDS=0V
Drain-source on-state resistance
VGS =10V, ID=25A
1Current limited by bondwire ; with an R
thJC = 1.1K/W the chip is able to carry ID = 52A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-06-17
SPD30N08S2-22
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
17
34
-
Dynamic Characteristics
Transconductance
gfs
VDS ≥2*ID*RDS(on)max ,
S
ID =30A
Input capacitance
Ciss
VGS =0V, VDS=25V,
-
1466
1950 pF
Output capacitance
Coss
f=1MHz
-
320
425
Reverse transfer capacitance
Crss
-
125
188
Turn-on delay time
td(on)
VDD =40V, VGS =10V,
-
10
15
Rise time
tr
ID =30A,
-
29
44
Turn-off delay time
td(off)
RG=7.5Ω
-
36
54
Fall time
tf
-
28
42
-
6.5
8.6
-
24
36
-
43
57
V(plateau) VDD=60V, I D=30A
-
5.3
-
V
IS
-
-
30
A
-
-
120
ns
Gate Charge Characteristics
Gate to source charge
Q gs
Gate to drain charge
Q gd
Gate charge total
Qg
VDD=60V, I D=30A
VDD=60V, I D=30A,
nC
VGS=0 to 10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TC=25°C
forward current
Inv. diode direct current, pulsed
I SM
Inverse diode forward voltage
VSD
VGS=0V, IF=30A
-
0.9
1.3
V
Reverse recovery time
t rr
VR=40V, IF =l S,
-
57
71
ns
Reverse recovery charge
Q rr
diF/dt=100A/µs
-
130
163
nC
Page 3
2002-06-17
SPD30N08S2-22
1 Power dissipation
2 Drain current
Ptot = f (TC )
ID = f (TC )
parameter: VGS ≥ 10 V
SPD30N08S2-22
32
150
SPD30N08S2-22
W
A
120
24
100
ID
Ptot
110
90
80
20
16
70
60
12
50
40
8
30
20
4
10
0
0
20
40
60
80
0
0
100 120 140 160 °C 190
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area
4 Max. transient thermal impedance
ID = f ( VDS )
ZthJC = f (tp )
parameter : D = 0 , TC = 25 °C
parameter : D = tp /T
10
10 1
3 SPD30N08S2-22
SPD30N08S2-22
K/W
A
10 0
Z thJC
tp = 10.0µs
10 -1
=
V
DS
/I
D
ID
10 2
on
)
DS
(
10
R
10
D = 0.50
100 µs
-2
0.20
1
0.10
0.05
1 ms
0.02
10 -3
0.01
single pulse
10 ms
DC
10
0
10
-1
10
0
10
1
V
10
2
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
VDS
Page 4
2002-06-17
SPD30N08S2-22
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS ); Tj=25°C
RDS(on) = f (ID )
parameter: tp = 80 µs
parameter: VGS
SPD30N08S2-22
A
SPD30N08S2-22
70
Ptot = 136W
mΩ
VGS [V]
a
i
ID
60
b
4.8
55
c
5.0
50
h d
5.3
e
5.5
45
40
g
35
f
30
f
5.8
g
6.0
d
e
f
g
h
60
4.5
55
RDS(on)
75
50
45
40
h
6.3
35
i
10.0
30
25
25
e
20
20
d
15
10
10 VGS [V] =
c
5
b
5
i
15
d
5.3
e
f
5.5 5.8
g
6.0
h
i
6.3 10.0
10
20
30
a
0
0
1
2
3
4
V
0
0
5.5
A
40
60
ID
VDS
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
gfs = f(ID); Tj=25°C
parameter: gfs
60
40
A
S
50
30
40
g fs
ID
45
25
35
30
20
25
15
20
15
10
10
5
5
0
0
1
2
3
4
5
0
0
7
V
VGS
Page 5
5
10
15
20
25
30
35
40
A
ID
50
2002-06-17
SPD30N08S2-22
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj )
VGS(th) = f (Tj)
parameter : ID = 25 A, VGS = 10 V
parameter: VGS = VDS
85
SPD30N08S2-22
4
mΩ
V
400 µA
V GS(th)
RDS(on)
70
60
3
80 µA
2.5
50
2
40
1.5
30
98%
20
1
typ
0.5
10
0
-60
-20
20
60
100
140
°C
0
-60
200
-20
20
60
100
180
°C
Tj
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
I F = f (VSD)
parameter: VGS =0V, f=1 MHz
parameter: Tj , tp = 80 µs
10
4
10 3
SPD30N08S2-22
A
pF
10 2
IF
C
Ciss
10 3
Coss
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Crss
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 2
0
5
10
15
20
V
30
10 0
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
VDS
Page 6
2002-06-17
SPD30N08S2-22
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj)
VGS = f (Q Gate)
parameter: ID = 30 A pulsed
par.: ID = 30 A , VDD = 25 V, RGS = 25 Ω
240
16
SPD30N08S2-22
mJ
V
200
12
VGS
E AS
180
160
0,2 VDS max
10
0,8 VDS max
140
120
8
100
6
80
60
4
40
2
20
0
25
45
65
85
105
125
145
°C 185
Tj
0
0
10
20
30
40
50
nC
65
QGate
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj )
parameter: ID=10 mA
92
SPD30N08S2-22
V
V (BR)DSS
88
86
84
82
80
78
76
74
72
70
68
-60
-20
20
60
100
140
°C
200
Tj
Page 7
2002-06-17
SPD30N08S2-22
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPD30N08S2-22, for simplicity the device is referred to by the term
SPD30N08S2-22 throughout this documentation.
Page 8
2002-06-17