BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 60 V Per transistor VDS drain-source voltage Tamb = 25 °C VGS gate-source voltage Tamb = 25 °C ID drain current RDSon drain-source on-state resistance - - ±20 V Tamb = 25 °C; VGS = 10 V [1] - - 320 mA Tj = 25 °C; VGS = 10 V; ID = 300 mA [2] - 0.9 1.6 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01. BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 S1 source1 2 G1 gate1 3 D2 drain2 4 S2 source2 5 G2 gate2 6 D1 drain1 Simplified outline 6 5 4 1 2 3 Graphic symbol D1 S1 D2 G1 S2 G2 msd901 3. Ordering information Table 3. Ordering information Type number BSS138PS Package Name Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code[1] BSS138PS NZ* [1] * = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VDS drain-source voltage Tamb = 25 °C - 60 V VGS gate-source voltage Tamb = 25 °C - ±20 V Tamb = 25 °C - 320 mA Tamb = 100 °C - 200 mA - 1.2 A ID IDM BSS138PS Product data sheet drain current peak drain current VGS = 10 V Tamb = 25 °C; single pulse; tp ≤ 10 μs All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 [1] © NXP B.V. 2010. All rights reserved. 2 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb = 25 °C Min Max Unit [2] - 280 mW [1] - 320 mW - 960 mW 290 mA Tsp = 25 °C Source-drain diode source current Tamb = 25 °C [1] - Ptot total power dissipation Tamb = 25 °C [2] - Tj junction temperature Tamb ambient temperature Tstg storage temperature IS Per device mW °C −55 +150 °C −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa001 120 Pder (%) 017aaa002 120 Ider (%) 80 80 40 40 0 −75 −25 25 75 0 −75 125 175 Tamb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) Fig 1. 420 150 Product data sheet 25 75 125 175 Tamb (°C) ID I der = -------------------- × 100 % I D ( 25°C ) Normalized total power dissipation as a function of ambient temperature BSS138PS −25 Fig 2. Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 3 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 017aaa122 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) 10−1 (3) (4) 10−2 (5) (6) 10−3 10−1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [1] - 390 445 K/W [2] - 340 390 K/W - - 130 K/W - - 300 K/W Per transistor Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Per device Rth(j-a) BSS138PS Product data sheet thermal resistance from junction to ambient in free air [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 4 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 017aaa034 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa035 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 5 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 0.9 1.2 1.5 V Tj = 25 °C - - 1 μA Tj = 150 °C - - 10 μA - - 100 nA - 1 2 Ω - 0.9 1.6 Ω - 700 - mS - 0.72 0.8 nC Per transistor Static characteristics V(BR)DSS drain-source breakdown ID = 10 μA; VGS = 0 V voltage VGS(th) gate-source threshold voltage ID = 250 μA; VDS = VGS IDSS drain leakage current VDS = 60 V; VGS = 0 V IGSS gate leakage current RDSon drain-source on-state resistance VGS = ±20 V; VDS = 0 V [1] VGS = 5 V; ID = 50 mA VGS = 10 V; ID = 300 mA forward transconductance gfs VDS = 10 V; ID = 200 mA [1] Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time ID = 300 mA; VDS = 30 V; VGS = 4.5 V VGS = 0 V; VDS = 10 V; f = 1 MHz VDS = 50 V; RL = 250 Ω; VGS = 10 V; RG = 6 Ω - 0.14 - nC - 0.24 - nC - 38 50 pF - 7 - pF - 4 - pF - 2 6 ns - 3 - ns - 9 20 ns - 4 - ns 0.47 0.75 1.1 V Source-drain diode VSD [1] BSS138PS Product data sheet source-drain voltage IS = 115 mA; VGS = 0 V Pulse test: tp ≤ 300 μs; δ ≤ 0.01. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 6 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 017aaa112 1.0 VGS = 3.5 V ID (A) 017aaa113 10−3 2.75 V 3.0 V ID (A) 0.8 2.5 V 10−4 (1) 0.6 (2) (3) 2.25 V 0.4 10−5 2.0 V 0.2 0.0 0.0 1.0 2.0 3.0 4.0 10−6 0.0 0.5 1.0 1.5 VDS (V) 2.0 VGS (V) Tamb = 25 °C Tamb = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Per transistor: Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa114 5.0 RDSon (Ω) (1) Per transistor: Sub-threshold drain current as a function of gate-source voltage 017aaa115 6.0 RDSon (Ω) (2) 4.0 4.0 3.0 2.0 (1) (3) 2.0 (4) (2) 1.0 (5) 0.0 0.0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 2.0 ID (A) Tamb = 25 °C 4.0 6.0 8.0 10.0 VGS (V) ID = 300 mA (1) VGS = 2 V (1) Tamb = 150 °C (2) VGS = 2.5 V (2) Tamb = 25 °C (3) VGS = 3 V (4) VGS = 3.5 V (5) VGS = 10 V Fig 8. Per transistor: Drain-source on-state resistance as a function of drain current; typical values BSS138PS Product data sheet Fig 9. Per transistor: Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 7 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 017aaa116 0.8 ID (A) 017aaa022 2.4 a (1) (2) 0.6 1.8 0.4 1.2 0.2 0.6 (2) 0.0 0.0 1.0 (1) 2.0 3.0 VGS (V) 0.0 −60 VDS > ID × RDSon 0 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon ( 25°C ) (1) Tamb = 25 °C (2) Tamb = 150 °C Fig 10. Per transistor: Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa117 2.0 Fig 11. Per transistor: Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa118 102 VGS(th) (V) (1) C (pF) (1) 1.5 (2) 1.0 (2) 10 (3) (3) 0.5 0.0 −60 0 60 120 180 Tamb (°C) ID = 0.25 mA; VDS = VGS 1 10−1 f = 1 MHz; VGS = 0 V (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Per transistor: Gate-source threshold voltage as a function of ambient temperature Product data sheet 102 10 VDS (V) (1) maximum values BSS138PS 1 Fig 13. Per transistor: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 8 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 017aaa119 5.0 VGS (V) 4.0 VDS ID 3.0 VGS(pl) 2.0 VGS(th) VGS 1.0 QGS1 0.0 0.0 QGS2 QGS 0.2 0.4 0.6 0.8 QGD QG(tot) QG (nC) 003aaa508 ID = 300 mA; VDS = 30 V; Tamb = 25 °C Fig 14. Per transistor: Gate-source voltage as a function of gate charge; typical values Fig 15. Per transistor: Gate charge waveform definitions 017aaa120 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16. Per transistor: Source current as a function of source-drain voltage; typical values BSS138PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 9 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS138PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 10 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 c bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 18. Package outline SOT363 (SC-88) BSS138PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 11 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 19. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 20. Wave soldering footprint SOT363 (SC-88) BSS138PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 12 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BSS138PS v.1 20101102 Product data sheet - - BSS138PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 13 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 12. 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Export might require a prior authorization from national authorities. BSS138PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 14 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BSS138PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 15 of 16 BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Quality information . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 November 2010 Document identifier: BSS138PS