SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST39 ✪ ISSUE 4 – JUNE 1996 FEATURES * Fast Switching * High hFE. C COMPLEMENTARY TYPE – BST16 PARTMAKING DETAIL – AT1 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 400 V IC=10µA V(BR)CEO 350 V IC=1mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=10µA Collector Cut-Off Current ICBO 20 nA VCB=300V Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=50mA, IB=4mA Base-Emitter Saturation Voltage VBE(sat) 1.3 V IC=50mA, IB=4mA Static Forward Current Transfer Ratio hFE Output Capacitance Cobo 2 pF VCB=10V, f=1MHz Input Capacitance Cibo 20 pF VEB=10V, f=1MHz Transition Frequency fT MHz IC=10mA, VCE=10V, f=5MHz 40 IC=20mA, VCE=10V* 70 * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMT458 datasheet. 3 - 77