Philips Semiconductors Product specification Thyristors GENERAL DESCRIPTION Glass passivated thyristors in a plastic envelope suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. PINNING - SOT404 PIN BT152B series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT BT152BRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current 400R 450 600R 650 800R 800 V 13 20 200 13 20 200 13 20 200 A A A PIN CONFIGURATION SYMBOL DESCRIPTION mb 1 cathode 2 anode 3 gate mb a k 2 anode 1 g 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj CONDITIONS half sine wave; Tmb ≤ 103 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 50 A; IG = 0.2 A; dIG/dt = 0.2 A/µs I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature MIN. MAX. UNIT - -400R -600R -800R 4501 6501 800 V - 13 20 A A - 200 220 200 200 A A A2s A/µs -40 - 5 5 5 20 0.5 150 125 A V V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Thyristors BT152B series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance minimum footprint, FR4 board junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - - 1.1 K/W - 55 - K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT IL IH VT VGT Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 40 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C 0.25 - 3 25 15 1.4 0.6 0.4 0.2 32 80 60 1.75 1.5 1.0 mA mA mA V V V mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform gate open circuit VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs; ITM = 40 A VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 50 A; VR = 25 V; dITM/dt = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω 200 300 - V/µs - 2 - µs - 70 - µs tgt tq September 1997 2 Rev 1.100 Philips Semiconductors Product specification Thyristors 25 BT152B series Ptot / W BT152 conduction angle degrees 30 60 90 120 180 20 15 Tmb(max) / C ITSM / A 250 97.5 BT152 form factor a a = 1.57 4 2.8 2.2 1.9 1.57 1.9 103 200 108.5 150 114 100 time T Tj initial = 25 C max 2.2 2.8 ITSM IT 4 10 119.5 5 0 0 5 50 125 15 10 0 IT(AV) / A Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). 1000 10 100 Number of half cycles at 50Hz 1000 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. BT152 ITSM / A 1 50 BT152 IT(RMS) / A dI T /dt limit 40 30 100 20 I TSM IT 10 time T Tj initial = 25 C max 10 10us 100us 0 0.01 10ms 1ms 0.1 1 surge duration / s T/s Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. 25 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 103˚C. BT152 IT(RMS) / A 1.6 103 C 20 10 VGT(Tj) VGT(25 C) BT151 1.4 1.2 15 1 10 0.8 5 0 -50 0.6 0 50 Tmb / C 100 0.4 -50 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. September 1997 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.100 Philips Semiconductors Product specification Thyristors 3 BT152B series IGT(Tj) IGT(25 C) 50 BT152 BT152 IT / A Tj = 125 C Tj = 25 C 2.5 40 2 30 Vo = 1.12 V Rs = 0.015 ohms max typ 1.5 20 1 10 0.5 0 -50 0 50 Tj / C 100 0 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 IL(Tj) IL(25 C) 0 0.5 1 VT / V 1.5 2 Fig.10. Typical and maximum on-state characteristic. 10 BT145 2.5 BT152 Zth j-mb (K/W) 1 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 IH(Tj) IH(25 C) 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 10000 BT152 dVD/dt (V/us) 2.5 RGK = 100 Ohms 1000 2 gate open circuit 1.5 100 1 0.5 0 -50 0 50 Tj / C 100 10 150 50 100 150 Tj / C Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. September 1997 0 4 Rev 1.100 Philips Semiconductors Product specification Thyristors BT152B series MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.13. SOT404 : centre pin connected to mounting base. Notes 1. Epoxy meets UL94 V0 at 1/8". MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". September 1997 5 Rev 1.100 Philips Semiconductors Product specification Thyristors BT152B series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Rev 1.100