Philips Semiconductors Product specification Thyristors logic level BT169 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. SYMBOL PINNING - TO92 variant PIN PARAMETER MAX MAX MAX MAX UNIT . . . . BT169 Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current VDRM, VRRM IT(AV) IT(RMS) ITSM PIN CONFIGURATION B 200 D 400 E 500 G 600 0.5 0.5 0.5 0.5 0.8 8 0.8 8 0.8 8 0.8 8 V A A A SYMBOL DESCRIPTION 1 anode 2 gate 3 cathode a k g 3 2 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM, VRRM Repetitive peak off-state voltages - IT(AV) Average on-state current IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature IGM VGM VRGM PGM PG(AV) Tstg Tj half sine wave; Tlead ≤ 83 ˚C all conduction angles t = 10 ms t = 8.3 ms half sine wave; Tj = 25 ˚C prior to surge t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs MAX. B 2001 D 4001 E 5001 UNIT G 6001 V - 0.5 A - 0.8 8 9 A A A - 0.32 50 A2s A/µs -40 - 1 5 5 2 0.1 150 125 A V V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 2001 1 Rev 1.500 Philips Semiconductors Product specification Thyristors logic level BT169 series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-lead Thermal resistance junction to lead Rth j-a Thermal resistance junction to ambient CONDITIONS pcb mounted; lead length = 4mm MIN. TYP. MAX. UNIT - - 60 K/W - 150 - K/W MIN. TYP. MAX. UNIT 0.2 50 2 2 1.2 0.5 0.3 200 6 5 1.35 0.8 - µA mA mA V V V - 0.05 0.1 mA STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT IL IH VT VGT Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current VD = 12 V; IT = 10 mA; gate open circuit VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ IT = 1 A VD = 12 V; IT = 10 mA; gate open circuit VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C; gate open circuit VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C; RGK = 1 kΩ DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1 kΩ ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ 500 800 - V/µs - 2 - µs - 100 - µs tgt tq September 2001 2 Rev 1.500 Philips Semiconductors Product specification Thyristors logic level 0.8 BT169 series Tc(max) / C 77 Ptot / W 0.7 0.6 0.5 0.4 10 ITSM / A a = 1.57 conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 1.9 8 89 2.2 95 2.8 I TSM IT 83 time T Tj initial = 25 C max 6 101 4 0.3 107 0.2 113 0.1 119 4 2 0 0 0.1 0.2 0.3 0.4 IF(AV) / A 0.5 0.6 125 0.7 0 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). 1000 1 10 100 Number of half cycles at 50Hz 1000 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. ITSM / A 2 IT(RMS) / A 1.5 100 1 10 I TSM IT 0.5 time T Tj initial = 25 C max 1 10us 100us 0 0.01 10ms 1ms 0.1 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. 1 1 10 surge duration / s T/s Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead ≤ 83˚C. IT(RMS) / A 1.6 VGT(Tj) VGT(25 C) 83 C 0.8 1.4 1.2 0.6 1 0.4 0.8 0.2 0 -50 0.6 0 50 Tlead / C 100 0.4 -50 150 Fig.3. Maximum permissible rms current IT(RMS) , versus lead temperature, Tlead. September 2001 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.500 Philips Semiconductors Product specification Thyristors logic level 3 BT169 series IGT(Tj) IGT(25 C) 5 IT / A Tj = 125 C Tj = 25 C 4 2.5 2 Vo = 1.067 V Rs = 0.187 ohms max typ 3 1.5 2 1 1 0.5 0 -50 0 0 50 Tj / C 100 150 0.5 1 1.5 2 2.5 VT / V Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 0 IL(Tj) IL(25 C) 100 2.5 Zth j-lead (K/W) 10 2 1 1.5 P D 1 tp 0.1 t 0.5 0 -50 0 50 Tj / C 100 0.01 10us 150 1ms 10ms 0.1s 1s 10s tp / s Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj, RGK = 1 kΩ. 3 0.1ms Fig.11. Transient thermal impedance Zth j-lead, versus pulse width tp. dVD/dt (V/us) IH(Tj) IH(25 C) 10000 RGK = 1 kohms 2.5 1000 2 1.5 100 1 0.5 0 -50 10 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj, RGK = 1 kΩ. September 2001 0 50 Tj / C 100 150 Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. 4 Rev 1.500 Philips Semiconductors Product specification Thyristors logic level BT169 series MECHANICAL DATA Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 e1 L L1(1) 1.27 14.5 12.7 2.5 e 2.54 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. REFERENCES OUTLINE VERSION IEC SOT54 JEDEC EIAJ TO-92 SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig.13. TO92 ; plastic envelope; Net Mass: 0.2 g Notes 1. Epoxy meets UL94 V0 at 1/8". September 2001 5 Rev 1.500 Philips Semiconductors Product specification Thyristors logic level BT169 series DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 PRODUCT STATUS3 DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. September 2001 6 Rev 1.500