STMICROELECTRONICS BTA10

BTA10 and BTB10 Series
®
10A TRIACS
SNUBBERLESS™ & STANDARD
Table 1: Main Features
A2
Symbol
Value
Unit
IT(RMS)
10
A
VDRM/VRRM
600 and 800
V
IGT (Q1)
25 to 50
mA
G
A1
A2
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA10 and BTB10 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase
control operation in light dimmers, motor speed
controllers,...
The snubberless version (W suffix) is specially
recommended for use on inductive loads, thanks
to their high commutation performances.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at
2500VRMS) complying with UL standards (File ref.:
E81734).
A1
A2
G
A1
A2
G
TO-220AB Insulated
(BTA10)
Table 2: Order Codes
Part Number
BTA10-xxxxxRG
BTB10-xxxxxRG
TO-220AB
(BTB10)
Marking
See page table 8 on
page 6
Table 3: Absolute Maximum Ratings
Symbol
IT(RMS)
ITSM
I²t
dI/dt
Parameter
RMS on-state current (full sine
wave)
TO-220AB
F = 120 Hz
VDSM/VRSM Non repetitive surge peak off-state tp = 10 ms
voltage
IGM
PG(AV)
Tstg
Tj
February 2006
Peak gate current
Unit
10
A
100
105
A
55
A²s
Tj = 125°C
50
A/µs
Tj = 25°C
VDSM/VRSM
+ 100
V
Tj = 125°C
4
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
Tc = 105°C
TO-220AB Ins. Tc = 95°C
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, Tj initial = 25°C) F = 60 Hz
tp = 10 ms
I²t Value for fusing
Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns
Value
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
REV. 6
t = 20 ms
t = 16.7 ms
1/7
BTA10 and BTB10 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
SNUBBERLESS (3 quadrants)
■
Symbol
IGT (1)
VGT
Test Conditions
VD = 12 V RL = 33 Ω
VGD
VD = VDRM RL = 3.3 kΩ
IH (2)
IT = 500 mA
IL
IG = 1.2 IGT
dV/dt (2)
BTA10 / BTB10
Quadrant
Tj = 125°C
CW
BW
35
50
Unit
I - II - III
MAX.
I - II - III
MAX.
1.3
V
I - II - III
MIN.
0.2
V
MAX.
I - III
II
MAX.
35
50
50
70
60
80
mA
mA
mA
VD = 67 %VDRM gate open Tj = 125°C
MIN.
500
1000
V/µs
Tj = 125°C
MIN.
5.5
9.0
A/ms
(dI/dt)c (2) Without snubber
Standard (4 quadrants)
■
Symbol
IGT (1)
Quadrant
RL = 33 Ω
I - II - III
IV
MAX.
ALL
MAX.
1.3
V
ALL
MIN.
0.2
V
VD = 12 V
VGT
VGD
VD = VDRM RL = 3.3 kΩ Tj = 125°C
IH (2)
IT = 500 mA
IL
IG = 1.2 IGT
dV/dt (2)
BTA10 / BTB10
Test Conditions
MAX.
I - III - IV
II
MAX.
C
B
25
50
50
100
25
50
40
50
80
100
Unit
mA
mA
mA
VD = 67 %VDRM gate open Tj = 125°C
MIN.
200
400
V/µs
Tj = 125°C
MIN.
5
10
V/µs
(dV/dt)c (2) (dI/dt)c = 4.4 A/ms
Table 5: Static Characteristics
Symbol
Test Conditions
VT (2)
ITM = 14 A
Vt0 (2)
tp = 380 µs
Unit
Tj = 25°C
MAX.
1.55
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd (2)
Dynamic resistance
Tj = 125°C
MAX.
40
mΩ
IDRM
IRRM
VDRM = VRRM
5
µA
1
mA
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
2/7
Value
Tj = 25°C
Tj = 125°C
MAX.
BTA10 and BTB10 Series
Table 6: Thermal resistance
Symbol
Parameter
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
Value
TO-220AB
1.5
TO-220AB Insulated
2.4
TO-220AB
°C/W
60
TO-220AB Insulated
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
Unit
°C/W
Figure 2: RMS on-state current versus case
temperature (full cycle)
P(W)
IT(RMS)(A)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
12
11
BTB
10
9
8
BTA
7
6
5
4
3
2
1
IT(RMS)(A)
TC(°C)
0
0
1
2
3
4
5
6
7
8
9
10
Figure 3: Relative variation of thermal
impedance versus pulse duration
0
25
50
75
100
125
Figure 4: On-state characteristics (maximum
values)
ITM(A)
K=[Zth/Rth]
100
1E+0
Tj max.
Vt0 = 0.85V
Rd = 40 mΩ
Zth(j-c)
Tj = Tj max.
Zth(j-a)
10
1E-1
Tj = 25°C
tp(s)
1E-2
VTM(V)
1
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3/7
BTA10 and BTB10 Series
Figure 5: Surge peak on-state current versus
number of cycles
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
and corresponding value of I2t
ITSM(A)
2
2
ITSM(A), I t (A s)
110
100
90
80
70
60
50
40
30
20
10
0
1000
Tj initial=25°C
t=20ms
Non repetitive
Tj initial=25°C
One cycle
ITSM
dI/dt limitation:
50A/µs
100
I2t
Repetitive
TC=95°C
Number of cycles
1
10
tp(ms)
100
1000
Figure 7: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
10
0.01
0.10
1.00
10.00
Figure 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.5
2.0
1.8
2.0
1.6
B
IGT
C
1.4
1.5
1.2
BW/CW
IH & IL
1.0
1.0
0.8
0.5
0.6
Tj(°C)
(dV/dt)c (V/µs)
0.4
0.0
-40
-20
0
20
40
60
80
100
120
140
Figure 9: Relative variation of critical rate of
decrease of main current versus junction
temperature
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj(°C)
0
0
4/7
25
50
75
100
125
0.1
1.0
10.0
100.0
BTA10 and BTB10 Series
Figure 10: Ordering Information Scheme
BT A 10 - 600 BW RG
Triac series
Insulation
A = insulated
B = non insulated
Current
10 = 10A
Voltage
600 = 600V
800 = 800V
Sensitivity and type
B = 50mA Standard
C = 25mA Standard
BW = 50mA Snubberless
CW = 35mA Snubberless
Packing mode
RG = Tube
Table 7: Product Selector
Part Number
Voltage (xxx)
Sensitivity
Type
X
50 mA
Standard
TO-220AB
X
X
50 mA
Snubberless
TO-220AB
BTA/BTB10-xxxC
X
X
25 mA
Standard
TO-220AB
BTA/BTB10-xxxCW
X
X
35 mA
Snubberless
TO-220AB
600 V
800 V
BTA/BTB10-xxxB
X
BTA/BTB10-xxxBW
Package
BTB: non insulated TO-220AB package
5/7
BTA10 and BTB10 Series
Figure 11: TO-220AB (insulated and non insulated) Package Mechanical Data
REF.
C
B
ØI
b2
L
F
A
I4
l3
c2
a1
l2
a2
M
c1
b1
e
A
a1
a2
B
b1
b2
C
c1
c2
e
F
ØI
I4
L
l2
l3
M
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ.
15.20
15.90 0.598
3.75
0.147
13.00
14.00 0.511
10.00
10.40 0.393
0.61
0.88 0.024
1.23
1.32 0.048
4.40
4.60 0.173
0.49
0.70 0.019
2.40
2.72 0.094
2.40
2.70 0.094
6.20
6.60 0.244
3.75
3.85 0.147
15.80 16.40 16.80 0.622 0.646
2.65
2.95 0.104
1.14
1.70 0.044
1.14
1.70 0.044
2.60
0.102
Max.
0.625
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
0.661
0.116
0.066
0.066
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.
Table 8: Ordering Information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
BTA/BTB10-xxxyzRG
BTA/BTB10-xxxyz
TO-220AB
2.3 g
50
Tube
Note: xxx = voltage, yy = sensitivity, z = type
Table 9: Revision History
6/7
Date
Revision
Apr-2002
5A
13-Feb-2006
6
Description of Changes
Last update.
TO-220AB delivery mode changed from bulk to tube.
ECOPACK statement added.
BTA10 and BTB10 Series
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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