BTA20 Series ® 20A TRIACS SNUBBERLESS™ Table 1: Main Features A2 Symbol Value Unit IT(RMS) 20 A VDRM/VRRM 600 and 700 V IGT (Q1) (max) 35 and 50 mA G A1 DESCRIPTION The BTA20 BW/CW triac family are high performance glass passivated chips technology. The snubberless concept offer suppression of RC network and it is suitable for application such as phase control and static switching on inductive or resistive load. A1 A2 G TO-220AB Insulated Table 2: Order Codes Part Numbers BTA20-600BWRG BTA20-600CWRG BTA20-700BWRG BTA20-700CWRG Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref.: E81734). Marking BTA20-600BW BTA20-600CW BTA20-700BW BTA20-700CW Table 3: Absolute Maximum Ratings Symbol IT(RMS) ITSM I ²t dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 500 mA dIG/dt = 1 A/µs VDSM/VRSM Non repetitive peak off-state voltage F = 50 Hz F = 60 Hz tp = 10 ms 20 A t = 10 ms t = 8.3 ms 210 200 A 200 A²s Tj = 25°C Tj = 125°C tp = 20 µs VGM Peak positive gate voltage tp = 20 µs February 2006 Tc = 70°C tp = 10 ms Peak gate current Tstg Tj Unit Repetitive F = 50 Hz Tj = 125°C Non repetitive IGM PG(AV) Value Tj = 125°C Average gate power dissipation Storage junction temperature range Operating junction temperature range REV. 2 20 100 VDSM/VRSM + 100 A/µs V 4 A 16 V 1 W - 40 to + 150 - 40 to + 125 °C 1/6 BTA20 Series Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) Symbol IGT (1) Test Conditions VD = 12 V ALL RL = 33 Ω VGT VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 500 mA gate open CW MIN. 2 1 MAX. 50 35 V ALL MIN. 0.2 V IG = 1.2 IGT II Tj = 125°C Tj = 125°C (dV/dt)c (2) (dI/dt)c = 20 A/ms mA 1.5 MAX. VD = 67 %VDRM gate open Unit MAX. I - II - III dV/dt (2) BW ALL I - III IL BTA20 Quadrant 75 50 50 - 90 - MAX. - 80 TYP. 750 500 MIN. 500 250 TYP. 36 22 MIN. 18 11 TYP. mA mA V/µs V/µs Table 5: Static Characteristics Symbol VTM (2) IDRM IRRM Test Conditions ITM = 28 A tp = 380 µs VDRM = VRRM Tj = 25°C Tj = 25°C Tj = 125°C MAX. MAX. Value Unit 1.70 V 10 µA 3 mA Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1. Table 6: Thermal resistance Symbol 2/6 Parameter Value Rth(j-c) Junction to case (AC) 2.1 Rth(j-c) Junction to case (DC) 2.8 Rth(j-a) Junction to ambient 60 Unit °C/W °C/W BTA20 Series Figure 1: Maximum power dissipation versus RMS on-state current (full cycle) Figure 2: Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact P(W) P(W) Tcase(°C) 30 30 65 Rth = 0°C/W 25 25 20 75 Rth = 0.5°C/W α = 180° 20 85 α = 120° 15 15 α = 90° α = 60° 10 10 Rth = 1°C/W 105 180° α = 30° 5 95 Rth = 1.5°C/W α α 5 115 Tamb(°C) IT(RMS)(A) 125 0 0 0 5 10 15 20 Figure 3: RMS on-state current versus case temperature (full cycle) 0 20 40 60 80 100 120 Figure 4: Relative variation of thermal impedance versus pulse duration K=[Zth/Rth] IT(RMS)(A) 1 25 α = 180° Zth(j-c) 20 15 Zth(j-a) 10 0.1 5 TC(°C) tp(s) 0 0 10 20 30 40 50 60 70 Figure 5: On-state (maximum values) 80 90 100 110 120 130 characteristics 0.01 1.E-3 1.E-2 1.E-1 1.E+0 1.E+1 1.E+2 5.E+2 Figure 6: Non repetitive surge peak on-state current versus number of cycles ITM(A) ITSM(A) 1000 1000 Tj max. Vt0 = 1.04V Rd = 20 mΩ t=20ms One cycle 100 Tj = Tj max. 10 Non repetitive Tj initial=25°C Tj = 25°C. Number of cycles VTM(V) 1 1 2 3 100 4 5 1 10 100 1000 3/6 BTA20 Series Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t Figure 8: Relative variation of gate trigger current and holding current versus junction temperature IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] ITSM(A), I2t (A2s) 2.5 1000 Tj initial=25°C 2.0 IGT 1.5 ITSM 1.0 IH & IL I2t 0.5 tp(ms) Tj(°C) 100 0.01 0.10 1.00 0.0 -40 -30 -20 -10 10.00 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Figure 9: Ordering Information Scheme BT A 20 - 600 BW RG Triac series Insulation A = insulated Current 20 = 20A Voltage 600 = 600V 700 = 700V Sensitivity and type BW = 50mA (max.) CW = 35mA (max) Packing mode RG = Tube Table 7: Product Selector Part Numbers Voltage (xxx) Sensitivity 600 V 700 V BTA20-xxxBWRG X X 50 mA BTA20-xxxCWRG X X 35 mA 4/6 Type Package Snubberless TO-220AB Ins. BTA20 Series Figure 10: TO-220AB Insulated Package Mechanical Data DIMENSIONS REF. Millimeters Min. A C B ØI c2 l2 c1 b1 15.90 0.598 3.75 Max. 0.625 0.147 13.00 14.00 0.511 0.551 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 a2 M Typ. 10.00 I4 l3 Min. B F A Inches Max. a2 L a1 15.20 a1 b2 Typ. F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 e M 2.60 0.102 Table 8: Ordering Information Ordering type Marking BTA20-600BWRG BTA20-600BW BTA20-600CWRG BTA20-600CW BTA20-700BWRG BTA20-700BW BTA20-700CWRG BTA20-700CW Package Weight Base qty Delivery mode TO-220AB Ins. 2.3 g 50 Tube Table 9: Revision History Date Revision Sep-2001 1A 08-Feb-2006 2 Description of Changes First issue. TO-220AB Ins. delivery mode changed from bulk to tube. 5/6 BTA20 Series Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. 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