STMICROELECTRONICS P0102AL5AA4

P01xxxL
®
0.25A SCRS
SENSITIVE
Table 1: Main Features
A
Symbol
Value
Unit
IT(RMS)
0.25
A
VDRM/VRRM
100 and 200
V
IGT
1 and 200
µA
G
K
A
G
DESCRIPTION
Thanks to highly sensitive triggering levels, the
P01xxxL SCR series is suitable for all applications
where the available gate current is limited such as
stand-by mode power supplies, smoke and alarm
detectors...
Available in SOT23-3L, it provides optimized
space saving on high density printed circuit
boards.
K
SOT23-3L
Table 2: Order Codes
Part Numbers
Marking
P0102AL 5AA4
P2A
P0102BL 5AA4
P2B
P0109AL 5AA4
P9A
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (180° conduction angle)
Tamb = 36°C
0.25
A
IT(AV)
Average on-state current (180° conduction angle)
Tamb = 36°C
0.16
A
ITSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
tp = 10 ms
Tj = 25°C
7
A
6
I²t Value for fusing
tp = 10 ms
Tj = 25°C
0.18
A2S
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Tj = 125°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
0.5
A
Tj = 125°C
0.02
W
- 40 to + 150
- 40 to + 125
°C
I²t
PG(AV)
Tstg
Tj
April 2005
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
REV. 4
1/7
P01xxxL
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
P0102xL
IGT
VGT
MAX.
RL = 140 Ω
VD = 12 V
Unit
1
µA
200
MAX.
0.8
V
MIN.
0.1
V
MIN.
8
V
VGD
VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ
VRG
IRG = 10 µA
IH
IT = 50 mA
RGK = 1 kΩ
MAX.
6
mA
IL
IG = 1 mA
RGK = 1 kΩ
MAX.
7
mA
dV/dt
VD = 67 % VDRM
VTM
ITM = 0.4 A
Vt0
Rd
IDRM
IRRM
RGK = 1 kΩ
MIN.
Tj = 25°C
MAX.
1.7
V
Threshold voltage
Tj = 125°C
MAX.
1.0
V
Dynamic resistance
Tj = 125°C
MAX.
1000
mΩ
tp = 380 µs
Tj = 25°C
VDRM = VRRM
Rth(j-a)
Tj = 125°C
Tj = 125°C
100
200
V/µs
1
Tj = 125°C
Table 5: Thermal resistance
Symbol
MAX.
µA
100
Parameter
Value
Unit
Junction to ambient (mounted on FR4 with recommended pad layout)
400
°C/W
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and D.C. on-state current
versus case temperature
P(W)
IT(AV)(A)
0.30
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
α = 180°
0.25
D.C.
0.20
α = 180°
0.15
0.10
360°
0.05
α
IT(AV)(A)
Tcase(°C)
0.00
0.00
2/7
P0109AL
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0
25
50
75
100
125
P01xxxL
Figure 3: Relative variation of thermal
impedance junction to ambient versus pulse
duration
Figure 4: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
K=[Zth(j-a)/Rth(j-a)]
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
1.00
6
5
4
0.10
3
IGT
2
IH & IL
RGK = 1kΩ
1
tp(s)
0.01
1E-2
1E-1
Tj(°C)
0
1E+0
1E+1
1E+2
Figure 5: Relative variation of holding current
versus gate-cathode resistance (typical
values)
-40
-20
0
20
40
60
80
100
120
140
Figure 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical
values)
IH[RGK] / IH[RGK=1kΩ]
dV/dt[RGK] / dV/dt[RGK=1kΩ]
20
10.0
Tj = 25°C
Tj = 125°C
VD = 0.67 x VDRM
18
16
14
12
10
1.0
8
6
4
2
RGK(kΩ)
0
1E-2
RGK(kΩ)
0.1
1E-1
1E+0
0
1E+1
Figure 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values)
200
400
600
800
1000
1200
1400
1600
1800
2000
Figure 8: Surge peak on-state current versus
number of cycles
dV/dt[CGK] / dV/dt[RGK=1kΩ]
10
ITSM(A)
7
VD = 0.67 x VDRM
Tj = 125°C
RGK = 1kΩ
8
6
tp=10ms
5
6
One cycle
4
Non repetitive
Tj initial=25°C
3
4
2
2
Repetitive
Tamb=25°C
1
CGK(nF)
0
0
1
2
3
4
Number of cycles
0
1
5
6
10
100
1000
7
3/7
P01xxxL
Figure 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10ms,
and corresponding value of I²t
Figure 10: On-state characteristics (maximum
values)
ITM(A)
ITSM(A), I2t (A2s)
1E+1
100.0
Tj max.:
Vt0=1.0V
Rd=1Ω
Tj initial = 25°C
ITSM
Tj=max
1E+0
10.0
Tj=25°C
1E-1
1.0
I2t
VTM(V)
tp(ms)
1E-2
0.1
0.01
0.10
1.00
10.00
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 11: Thermal resistance junction to
ambient versus copper surface under tab
(Epoxy printed circuit board FR4, copper
thickness: 35 mm)
Rth(j-a)(°C/W)
500
400
300
200
100
S(cm²)
0
0
10
20
30
40
50
60
70
80
90
100
Figure 12: Ordering Information Scheme
P 01 02 A L
Sensitive SCR series
Current
01 = 0.25A
Sensitivity
02 = 200µA
09 = 1µA
Voltage
A = 100V
B = 200V
Package
L = SOT23-3L
Packing mode
5AA4 = Tape & Reel
4/7
Blank
5AA4
4.0
4.5
5.0
5.5
6.0
P01xxxL
Table 6: Product Selector
Part Number
Voltage
Sensitivity
P0102AL 5AA4
100 V
200 µA
P0102BL 5AA4
200 V
200 µA
P0109AL 5AA4
100 V
1 µA
Package
SOT23-3L
Figure 13: SOT23-3L Package Mechanical Data
DIMENSIONS
A
REF.
E
e
B
D
e1
S
A1
L
c
Inches
Max.
Min.
Max.
A
0.89
1.4
0.035
0.055
A1
0
0.1
0
0.004
B
0.3
0.51
0.012
0.02
c
0.085
0.18
0.003
0.007
D
2.75
3.04
0.108
0.12
e
0.85
1.05
0.033
0.041
e1
1.7
2.1
0.067
0.083
E
1.2
1.6
0.047
0.063
H
2.1
2.75
0.083
0.108
L
H
Millimeters
Min.
S
0.6 typ.
0.35
0.65
0.024 typ.
0.014
0.026
Figure 14: Foot Print Dimensions (in millimeters)
0.95
0.61
1.26
0.73
3.25
5/7
P01xxxL
Table 7: Ordering Information
Ordering type
Marking
P0102AL 5AA4
P2A
P0102BL 5AA4
P2B
P0109AL 5AA4
P9A
Package
Weight
Base qty
Delivery mode
SOT23-3L
0.01 g
3000
Tape & reel
Table 8: Revision History
Date
Revision
6/7
Description of Changes
Sep-2000
3
Last update.
11-Apr-2005
4
P0102AL and P0109AL added.
P01xxxL
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2005 STMicroelectronics - All rights reserved
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