BTA41 A/B BTB41 B STANDARD TRIACS .. . FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 10V/µs BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA41 A/B / BTB41 B triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. A1 A2 G TOP 3 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM March 1995 Parameter Value Unit A BTA Tc = 75 °C 40 BTB Tc = 85 °C 45 tp = 8.3 ms 315 tp = 10 ms 300 I2t value tp = 10 ms 450 A2s Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 10 A/µs Non Repetitive 50 RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C 260 °C Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Repetitive peak off-state voltage Tj = 125 °C A BTA41-...A/B / BTB41-... B Unit 400 600 700 800 400 600 700 800 V 1/5 BTA41 A/B / BTB41 B THERMAL RESISTANCES Symbol Rth (j-a) Parameter Value Unit 50 °C/W BTA 1.2 °C/W BTB 0.8 BTA 0.9 BTB 0.6 Junction to ambient Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) °C/W GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) (DC) RL =33Ω Quadrant Tj=25°C RL =33Ω Suffix A B I-II-III MAX 100 50 IV MAX 150 100 mA Tj=25°C I-II-III-IV MAX 1.5 V VGT VD=12V VGD VD=VDRM R L=3.3kΩ Tj=125°C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 500mA dIG/dt = 3A/µs Tj=25°C I-II-III-IV TYP 2.5 µs IL IG=1.2 IGT Tj=25°C I-III-IV TYP II 70 60 200 180 100 80 mA IH * IT= 500mA gate open Tj=25°C MAX VTM * ITM= 60A tp= 380µs Tj=25°C MAX 1.8 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.01 mA Tj=125°C MAX 6 Linear slope up to VD =67%VDRM gate open Tj=125°C MIN (dI/dt)c = 18A/ms (dI/dt)c = 20A/ms Tj=125°C MIN dV/dt * (dV/dt)c * Rated Rated BTA BTB * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 Unit 250 250 10 mA V/µs V/µs BTA41 A/B / BTB41 B ORDERING INFORMATION Package BTA (Insulated) BTB (Uninsulated) IT(RMS) VDRM / VRRM A V A B 41 400 X X 600 X X 700 X X 800 X X 45 Sensitivity Specification 400 X 600 X 700 X 800 X Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) (BTA) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig.3 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) (BTB) Fig.4 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). 3/5 BTA41 A/B / BTB41 B Fig.5 : RMS on-state current versus case temperature. (BTA) Fig.6 : RMS on-state current versus case temperature. (BTB) Fig.7 : Relative variation of thermal transient impedance pulse duration. Fig.8 : Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1.00 Zth( j-c) 0.10 Zt h( j-a) 0.01 tp( s) 1E-3 1E-2 1E-1 1E +0 1 E+1 1 E+2 1 E +3 Fig.9 : Non Repetitive surge peak on-state current versus number of cycles. 4/5 Fig.10 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. BTA41 A/B / BTB41 B Fig.11 : On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TOP 3 Plastic REF. A H I R 4.6 G B D L N Cooling method : C Marking : type number Weight : 4.7 g N M C Inches Min. Max. Min. Max. A 15.10 15.50 0.594 0.611 B 20.70 21.10 0.814 0.831 C 14.30 15.60 0.561 0.615 D 16.10 16.50 0.632 0.650 G 3.40 - 0.133 - H 4.40 4.60 0.173 0.182 I 4.08 4.17 0.161 0.164 J 1.45 1.55 0.057 0.062 L 0.50 0.70 0.019 0.028 M 2.70 2.90 0.106 0.115 N 5.40 5.65 0.212 0.223 P 1.20 1.40 0.047 0.056 J P DIMENSIONS Millimeters Recommended torque value : 0.8 m.N. Maximum torqur value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5