isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU607 DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed: tf= 0.75μs(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER VCBO Collector-Base Voltage VCEV Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO w w w VALUE UNIT 330 V 330 V 150 V Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current 4 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU607 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.65A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.65A 1.3 V hFE DC Current Gain IC= 2A; VCE= 5V; ICEV Collector Cutoff Current VCE= 330V; VBE= -1.5V 15 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 400 mA Current-Gain—Bandwidth Product tf Fall Time w w isc Website：www.iscsemi.cn TYP. 2 15 n c . i m e IC= 5A; IB1= -IB2= 0.65A, VCC= 40V UNIT V B IC= 0.5A ; VCE= 10V, ftest= 1MHz MAX 150 B s c s i . w fT MIN 10 MHz 0.75 μs