BUL49A MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 12.19 (0.48) 11.18 (0.44) 30.40 (1.197) 29.90 (1.177) 4.09 (0.161) 3.84 (0.151) 2 Pls 2 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI–REL OPTIONS EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE FEATURES 11.18 (0.440) 10.67 (0.420) 1 16.97 (0.668) 16.87 (0.664) TO3 Pin 1 – Base • • • • • • • Pin 2 – Emitter Case is Collector • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 600V VCEO Collector – Emitter Voltage (IB = 0) 300V VEBO Emitter – Base Voltage (IC = 0) 10V IC Continuous Collector Current 25A IC(PK) Peak Collector Current 40A Ptot Total Dissipation at Tcase = 25°C Tstg Operating and Storage Temperature Range –65 to 175°C Rth Thermal Resistance (junction-case) Max. 0.7°CW Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 200W Prelim. 4/99 BUL49A ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. VCEO(sus) ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA 300 V(BR)CBO Collector – Base Breakdown Voltage IC = 1mA 600 V(BR)EBO Emitter – Base Breakdown Voltage IE = 1mA 10 ICBO Collector – Base Cut–Off Current ICEO Collector – Emitter Cut–Off Current IEBO Emitter Cut–Off Current hFE* DC Current Gain Typ. Unit V VCB = 600V IB = 0 Max. 10 TC = 125°C 100 VCE = 300V 100 VEB = 5V 10 IC = 0 TC = 125°C IC = 2A VCE = 4V 30 55 IC = 10A VCE = 4V 20 28 IC = 15A VCE = 4V 15 20 100 mA mA mA — TC = 125°C IC = 2A VCE(sat)* VBE(sat)* IB = 0.2A 0.07 0.2 IB = 1A 0.4 0.7 IC = 15A IB = 1.5A 1.2 1.5 IC = 10A IB = 1A 1.1 1.3 IC = 15A IB = 1.5A 1.4 2 IC = 100 VCE = 4V f = Collector – Emitter Saturation Voltage IC = 10A Base – Emitter Saturation Voltage V V DYNAMIC CHARACTERISTICS ft Transition Frequency Cob Output Capacitance 10MHz VCB = 20V f = 10MHz 20 MHz 260 pF * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 4/99