BUL805 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Description 3 The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds. The device is designed for use as PFC in high frequency ballast half bridge voltage fed topology. 1 2 TO-220 Figure 1. Internal schematic diagram Applications ■ Electronic ballast for fluorescent lighting ■ Dedicated for PFC solution in half-bridge voltage fed topology. Table 1. Device summary Order code Marking Package Packaging BUL805 BUL805 TO-220 Tube July 2008 Rev 2 1/8 www.st.com 8 BUL805 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2/8 BUL805 1 Electrical ratings Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (V BE = 0) 800 V VCEO Collector-emitter voltage (IB = 0) 450 V VEBO Emitter-base voltage (IC = 0) 9 V Collector current 5 A Collector peak current (tP < 5ms) 10 A Base current 2 A IBM Base peak current (tP < 5ms) 4 A Ptot Total dissipation at TC = 25°C 80 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 1.56 62.5 °C/W °C/W IC ICM IB TJ Table 3. Symbol Rthj-case Rthj-amb Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-amb __max __max 3/8 Electrical characteristics 2 BUL805 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Max. Unit VCE = 800 V TC = 125 °C 100 500 µA µA 250 µA VCE = 800 V Typ. ICES Collector cut-off current (VBE = 0) ICEO Collector cut-off current (IB = 0) VCE = 450 V VEBO Emitter-base voltage (IC = 0) IE = 10 mA 9 V IC = 10 mA 450 V Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) VBE(sat) (1) hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain IC = 1 A IB = 0.2 A 0.4 V IC = 2 A IB = 0.4 A 0.6 V IC = 3 A IB = 0.6 A 0.8 V IC = 1 A IB = 0.2 A 1.1 V IC = 2 A IB = 0.4 A 1.3 V IC = 3 A IB = 0.6 A 1.5 V IC = 10 mA V CE = 5 V 10 IC = 2 A V CE = 5 V 10 (1) Pulsed duration = 300 µs, duty cycle ≤ 1.5% 4/8 Min. 20 BUL805 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 Package mechanical data BUL805 TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 6/8 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 BUL805 4 Revision history Revision history Table 5. Document revision history Date Revision Changes 19-May-2006 1 Initial release. 15-Jul-2008 2 Document status promoted from preliminary data to datasheet. 7/8 BUL805 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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