DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BZX585 series Voltage regulator diodes Product data sheet Supersedes data of 2004 Mar 26 2004 Jun 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX585 series FEATURES PINNING • Total power dissipation: max. 300 mW PIN • Two tolerance series: ± 2 % and ± 5 % 1 • Working voltage range: nominal 2.4 V to 75 V (E24 range) 2 • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS handbook, halfpage • General regulation functions. DESCRIPTION ; ; cathode anode 1 2 Top view DESCRIPTION Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. The diodes are available in the normalized E24 ± 2 % (BZX585-B) and ± 5 % (BZX585-C) tolerance range. MAM387 The marking bar indicates the cathode. Fig.1 Simplified outline (SOD523) and symbol. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. MARKING TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE EA BZX585-B43 EM Marking codes for BZX585-B2V4 to BZX585-B75 BZX585-B2V4 C1 BZX585-B6V2 E1 BZX585-B16 BZX585-B2V7 C2 BZX585-B6V8 E2 BZX585-B18 EB BZX585-B47 EN BZX585-B3V0 C3 BZX585-B7V5 E3 BZX585-B20 EC BZX585-B51 EP BZX585-B3V3 C4 BZX585-B8V2 E4 BZX585-B22 ED BZX585-B56 ER BZX585-B3V6 C5 BZX585-B9V1 E5 BZX585-B24 EE BZX585-B62 ES BZX585-B3V9 C6 BZX585-B10 E6 BZX585-B27 EF BZX585-B68 ET BZX585-B4V3 C7 BZX585-B11 E7 BZX585-B30 EG BZX585-B75 EU BZX585-B4V7 C8 BZX585-B12 E8 BZX585-B33 EH BZX585-B5V1 C9 BZX585-B13 E9 BZX585-B36 EK BZX585-B5V6 C0 BZX585-B15 E0 BZX585-B39 EL 2004 Jun 22 2 NXP Semiconductors Product data sheet Voltage regulator diodes TYPE NUMBER MARKING CODE TYPE NUMBER BZX585 series MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE Marking codes for BZX585-C2V4 to BZX585-C75 BZX585-C2V4 F1 BZX585-C6V2 H1 BZX585-C16 HA BZX585-C43 HM BZX585-C2V7 F2 BZX585-C6V8 H2 BZX585-C18 HB BZX585-C47 HN BZX585-C3V0 F3 BZX585-C7V5 H3 BZX585-C20 HC BZX585-C51 HP BZX585-C3V3 F4 BZX585-C8V2 H4 BZX585-C22 HD BZX585-C56 HR BZX585-C3V6 F5 BZX585-C9V1 H5 BZX585-C24 HE BZX585-C62 HS BZX585-C3V9 F6 BZX585-C10 H6 BZX585-C27 HF BZX585-C68 HT BZX585-C4V3 F7 BZX585-C11 H7 BZX585-C30 HG BZX585-C75 HU BZX585-C4V7 F8 BZX585-C12 H8 BZX585-C33 HH BZX585-C5V1 F9 BZX585-C13 H9 BZX585-C36 HK BZX585-C5V6 F0 BZX585-C15 H0 BZX585-C39 HL ORDERING INFORMATION TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BZX585-B2V4 to BZX585-B75 − Plastic surface mounted package; 2 leads SOD523 BZX585-C2V4 to BZX585-C75 − Plastic surface mounted package; 2 leads SOD523 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − MAX. 200 UNIT IF continuous forward current IZSM non-repetitive peak reverse current tp = 100 μs; square wave; Tamb = 25 °C prior to surge see Tables 1 and 2 PZSM non-repetitive peak reverse power dissipation tp = 100 μs; square wave; Tamb = 25 °C prior to surge − 40 W Ptot total power dissipation Tamb = 25 °C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Note 1. Device mounted on an FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab. 2004 Jun 22 3 mA NXP Semiconductors Product data sheet Voltage regulator diodes BZX585 series ELECTRICAL CHARACTERISTICS Total BZX585-B and C series Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current 2004 Jun 22 CONDITIONS MAX. UNIT IF = 10 mA; see Fig.2 0.9 V IF = 100 mA; see Fig.2 1.1 V BZX585-B/C2V4 VR = 1 V 50 μA BZX585-B/C2V7 VR = 1 V 20 μA BZX585-B/C3V0 VR = 1 V 10 μA BZX585-B/C3V3 VR = 1 V 5 μA BZX585-B/C3V6 VR = 1 V 5 μA BZX585-B/C3V9 VR = 1 V 3 μA BZX585-B/C4V3 VR = 1 V 3 μA BZX585-B/C4V7 VR = 2 V 3 μA BZX585-B/C5V1 VR = 2 V 2 μA BZX585-B/C5V6 VR = 2 V 1 μA BZX585-B/C6V2 VR = 4 V 3 μA BZX585-B/C6V8 VR = 4 V 2 μA BZX585-B/C7V5 VR = 5 V 1 μA BZX585-B/C8V2 VR = 5 V 700 nA BZX585-B/C9V1 VR = 6 V 500 nA BZX585-B/C10 VR = 7 V 200 nA BZX585-B/C11 VR = 8 V 100 nA BZX585-B/C12 VR = 8 V 100 nA BZX585-B/C13 VR = 8 V 100 nA BZX585-B/C15 to 75 VR = 0.7VZnom 50 nA 4 BZX585B or C Tol. ± 2% (B) XXX DIFFERENTIAL RESISTANCE rdif (Ω) Tol. ± 5% (C) at IZtest = 1 mA at IZtest = 5 mA MIN. TYP. TYP. MAX. MAX. TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see figs 3 AND 4) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs TYP. MAX. MAX. 5 MAX. 2V4 2.35 2.45 2.28 2.52 275 400 70 100 −1.3 450 6.0 2V7 2.65 2.75 2.57 2.84 300 450 75 100 −1.4 440 6.0 3V0 2.94 3.06 2.85 3.15 325 500 80 95 −1.6 425 6.0 3V3 3.23 3.37 3.14 3.47 350 500 85 95 −1.8 410 6.0 3V6 3.53 3.67 3.42 3.78 375 500 85 90 −1.9 390 6.0 3V9 3.82 3.98 3.71 4.10 400 500 85 90 −1.9 370 6.0 4V3 4.21 4.39 4.09 4.52 410 600 80 90 −1.7 350 6.0 4V7 4.61 4.79 4.47 4.94 425 500 50 80 −1.2 325 6.0 5V1 5.00 5.20 4.85 5.36 400 480 40 60 −0.5 300 6.0 5V6 5.49 5.71 5.32 5.88 80 400 15 40 1.0 275 6.0 6V2 6.08 6.32 5.89 6.51 40 150 6 10 2.2 250 6.0 6V8 6.66 6.94 6.46 7.14 30 80 6 15 3.0 215 6.0 7V5 7.35 7.65 7.13 7.88 15 80 2 10 3.6 170 4.0 8V2 8.04 8.36 7.79 8.61 20 80 2 10 4.3 150 4.0 9V1 8.92 9.28 8.65 9.56 20 100 2 10 5.2 120 3.0 10 9.80 10.20 9.50 10.50 20 150 2 10 6.0 110 3.0 11 10.78 11.22 10.45 11.55 25 150 2 10 6.9 110 2.5 12 11.76 12.24 11.40 12.60 25 150 2 10 7.9 105 2.5 13 12.74 13.26 12.35 13.65 25 170 2 10 8.8 105 2.5 15 14.70 15.30 14.25 15.75 25 200 3 15 10.7 100 2.0 16 15.68 16.32 15.20 16.80 50 200 10 40 12.4 90 1.5 18 17.64 18.36 17.10 18.90 50 225 10 45 14.4 80 1.5 20 19.60 20.40 19.00 21.00 60 225 15 55 16.4 70 1.5 22 21.56 22.44 20.90 23.10 60 250 20 55 18.4 60 1.25 24 23.52 24.48 22.80 25.20 60 250 25 70 20.4 55 1.25 Product data sheet MAX. BZX585 series MIN. NXP Semiconductors WORKING VOLTAGE VZ (V) at IZtest = 5 mA Voltage regulator diodes 2004 Jun 22 Table 1 Per type BZX585-B/C2V4 to B/C24 Tamb = 25 °C unless otherwise specified. DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see figs 3 and 4) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs TYP. MAX. MAX. 6 Tol. ± 2 % (B) Tol. ± 5 % (C) at IZtest = 0.5 mA at IZtest = 2 mA MIN. MAX. MIN. MAX. TYP. 27 26.46 27.54 25.65 28.35 65 300 25 80 23.4 50 1.0 30 29.40 30.60 28.50 31.50 70 300 30 80 26.6 50 1.0 33 32.34 33.66 31.35 34.65 75 325 35 80 29.7 45 0.9 36 35.28 36.72 34.20 37.80 80 350 35 90 33.0 45 0.8 39 38.22 39.78 37.05 40.95 80 350 40 130 36.4 45 0.7 43 42.14 43.86 40.85 45.15 85 375 45 150 41.2 40 0.6 47 46.06 47.94 44.65 49.35 85 375 50 170 46.1 40 0.5 51 49.98 52.02 48.45 53.55 90 400 60 180 51.0 40 0.4 56 54.88 57.12 53.20 58.80 100 425 70 200 57.0 40 0.3 62 60.76 63.24 58.90 65.10 120 450 80 215 64.4 35 0.3 68 66.64 69.36 64.60 71.40 150 475 90 240 71.7 35 0.25 75 73.50 76.50 71.25 78.75 170 500 95 255 80.2 35 0.2 TYP. MAX. MAX. NXP Semiconductors BZX585B or C XXX WORKING VOLTAGE VZ (V) at IZtest = 2 mA Voltage regulator diodes 2004 Jun 22 Table 2 Per type BZX585-B/C27 to B/C75 Tamb = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 350 K/W Rth(j-s) thermal resistance from junction to solder point note 2 65 K/W Notes 2. Solder point at cathode tab. Product data sheet BZX585 series 1. Device mounted on a FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab. NXP Semiconductors Product data sheet Voltage regulator diodes BZX585 series GRAPHICAL DATA MBG781 MLD444 300 0.5 handbook, halfpage handbook, halfpage SZ (mV/K) IF (mA) 4V7 0 4V3 200 −0.5 2V4 2V7 3V9 −1 100 3V6 −1.5 0 0.6 0.8 −2 10−1 1 VF (V) 3V3 3V0 1 Tamb = 25 °C. BZX585-B/C2V4 to B/C4V7. Tamb = 25 °C to 150 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MLD445 12 handbook, halfpage 15 SZ (mV/K) 13 12 11 10 9V1 8V2 7V5 6V8 6V2 5V6 5V1 8 4 0 −4 10−1 1 10 IZ (mA) 102 BZX585-B/C5V1 to B/C15. Tamb = 25 °C to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. 2004 Jun 22 7 10 IZ (mA) 102 Temperature coefficient as a function of working current; typical values. NXP Semiconductors Product data sheet Voltage regulator diodes BZX585 series PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 2004 Jun 22 REFERENCES IEC JEDEC JEITA SC-79 8 EUROPEAN PROJECTION ISSUE DATE 02-12-13 06-03-16 NXP Semiconductors Product data sheet Voltage regulator diodes BZX585 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jun 22 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp10 Date of release: 2004 Jun 22 Document order number: 9397 750 13303