DISCRETE SEMICONDUCTORS DATA SHEET BAS416 Low-leakage diode Product data sheet Supersedes data of 2002 Nov 19 2004 Jan 26 NXP Semiconductors Product data sheet Low-leakage diode BAS416 FEATURES PINNING • Plastic SMD package PIN DESCRIPTION • Low leakage current: typ. 3 pA 1 cathode • Switching time: typ. 0.8 µs 2 anode • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. handbook, halfpage 1 2 APPLICATIONS • Low-leakage current applications in surface mounted circuits. MAM406 Marking code: D4. The marking bar indicates the cathode. DESCRIPTION Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. Fig.1 Simplified outline (SOD323) (SC-76) and symbol. ORDERING INFORMATION TYPE NUMBER BAS416 PACKAGE NAME − DESCRIPTION VERSION plastic surface mounted package; 2 leads SOD323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current CONDITIONS MIN. MAX. UNIT − 85 V − 75 V − 200 mA − 500 mA t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 250 mW see Fig.2 square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 2004 Jan 26 2 NXP Semiconductors Product data sheet Low-leakage diode BAS416 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage CONDITIONS TYP. MAX. UNIT see Fig.3 reverse current IF = 1 mA − 0.9 V IF = 10 mA − 1 V IF = 50 mA − 1.1 V IF = 150 mA − 1.25 V VR = 75 V 0.003 5 nA VR = 75 V; Tj = 150 °C 3 80 nA see Fig.5 Cd diode capacitance VR = 0; f = 1 MHz; see Fig.6 2 − pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 0.8 3 µs THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOD323 (SC-76) standard mounting conditions. 2004 Jan 26 3 VALUE UNIT 450 K/W NXP Semiconductors Product data sheet Low-leakage diode BAS416 GRAPHICAL DATA MHC323 300 MLB752 - 1 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 200 100 100 (1) (2) (3) 0 0 0 100 Tamb (°C) 0 200 0.8 1.2 V F (V) 1.6 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0.4 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2004 Jan 26 4 104 NXP Semiconductors Product data sheet Low-leakage diode BAS416 MLB754 2 10halfpage handbook, IR (nA) MBG526 2 handbook, halfpage 10 Cd (pF) (1) 1 1 10 1 (2) 10 2 10 3 0 0 50 100 150 0 200 T j ( oC) VR = 75 V. (1) Maximum values. (2) Typical values. Fig.5 5 10 15 VR (V) 20 f = 1 MHz; Tj = 25 °C. Reverse current as a function of junction temperature. Fig.6 handbook, full pagewidth tr Diode capacitance as a function of reverse voltage; typical values. tp t D.U.T. R = 50 Ω S V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time tr = 0.35 ns. Fig.7 Reverse recovery voltage test circuit and waveforms. 2004 Jan 26 t rr 5 output signal NXP Semiconductors Product data sheet Low-leakage diode BAS416 PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 2004 Jan 26 REFERENCES IEC JEDEC JEITA SC-76 6 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16 NXP Semiconductors Product data sheet Low-leakage diode BAS416 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 26 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/02/pp8 Date of release: 2004 Jan 26 Document order number: 9397 750 12591