INFRA-RED Item No.: 120214 1. This specification applies to GaAs / GaAs LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy p-Electrode p-Epitaxy GaAs 120 365 n-Epitaxy GaAs 230 n-substrate GaAs n-Electrode 365 Wire bond contacts can also have a spider shape 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Forward voltage Reverse current output Power * Switching time Conditions VF IR IF = VR = Φe IF = 20 mA IF = 50 mA IF = 100 mA tr, tf min 20 mA 5V 0,6 1,5 typ max Unit 1,20 1,40 10 V 0,8 2,0 0,6 Peak wavelength IF = 20 mA 930 λP * On request, wafers will be delivered according to output power classes Power measurement at OSA on gold plate 5. µA mW µs nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]