RED Item No.: 102205 1. This specification applies to GaAsP / GaAs LED Chips 2. Structure 2.1 Planar structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Al Au alloy p-Electrode p-Diffusion Isolator 120 n-Epitaxy GaAsP 300 120 300 n-Substrate GaAs 260 n-Electrode 300 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions VF VR IV IF = 10 mA IR = 10 µA IF = 10 mA typ max Unit 1,65 1,84 V V µcd Peak wavelength λP IF = 10 mA 660 * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate nm Forward voltage Reverse voltage Luminous intensity * 5. min 5 250 400 Packing Dice on adhesive film with wire bond side on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]