CD40101BMS CMOS 9-Bit Parity Generator/Checker December 1992 Features Pinout • High Voltage Type (20V Rating) CD40101BMS TOP VIEW • 100% Tested for Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC • Noise Margin (Over Full Package/Temperature Range) - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V D1 1 14 VDD D2 2 13 D8 D3 3 12 D7 D4 4 11 D6 D9 5 10 D5 9 EVEN OUT ODD OUT 6 8 INHIBIT VSS 7 • Standardized Symmetrical Output Characteristics • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” Description The CD40101BMS is a 9-bit (8 data bits plus 1 parity bit) parity generator/checker. It may be used to detect errors in data transmission or data retrieval. Odd and even outputs facilitate odd or even parity generation and checking. Functional Diagram When used as a parity generator, a parity bit is supplied along with the data to generate an even or odd parity output. When used as a parity checker, the received data bits and parity bits are compared for correct parity. The even or odd outputs are used to indicate an error in the received data. INHIBIT 8 D1 1 D2 2 Word length capability is expandable by cascading. The CD40101BMS is also provided with an inhibit control. If the inhibit control is set at logical “1”, the even and odd outputs go to a logical “0”. D3 3 D4 4 The CD40101BMS is supplied in these 14 lead outline packages: D5 10 Braze Seal DIP Frit Seal DIP Ceramic Flatpack D6 11 H4H H1B H3W D7 12 VDD = 14 VSS = 7 EVEN OUTPUT 9 DECODE ODD OUTPUT 6 D8 13 D9 5 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 7-1286 File Number 3350 Specifications CD40101BMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 VDD = 18V Output Voltage Output Voltage VOL15 VOH15 VDD = 15V, No Load VDD = 15V, No Load (Note 3) LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 10 µA 2 +125oC - 1000 µA 3 -55oC - 10 µA 1 +25oC -100 - nA 2 +125oC -1000 - nA 3 -55oC -100 - nA 1 +25oC - 100 nA 2 +125oC - 1000 nA 3 -55oC - 100 nA 1, 2, 3 +25oC, +125oC, -55oC - 50 mV 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA 1 +25oC 3.5 - mA 1 +25oC - -0.53 mA Output Current (Sink) Output Current (Source) IOL15 IOH5A VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA 1 +25oC - -3.5 mA 1 +25oC -2.8 -0.7 V VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC Output Current (Source) N Threshold Voltage P Threshold Voltage Functional IOH15 VNTH VPTH F VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VOH > VOL < VDD/2 VDD/2 V Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V Input Voltage High (Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V Input Voltage Low (Note 2) VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC - 4 V Input Voltage High (Note 2) VIH VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC 11 - V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 7-1287 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. Specifications CD40101BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Data-In To Output Propagation Delay Inhibit-In to Output Transition Time SYMBOL TPHL1 TPLH1 CONDITIONS (NOTE 1, 2) GROUP A SUBGROUPS TEMPERATURE VDD = 5V, VIN = VDD or GND 9 10, 11 TPHL2 TPLH2 VDD = 5V, VIN = VDD or GND TTHL TTLH VDD = 5V, VIN = VDD or GND 9 10, 11 9 10, 11 +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC LIMITS MIN MAX UNITS - 700 ns - 945 ns - 280 ns - 378 ns - 200 ns - 270 ns NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS NOTES VDD = 5V, VIN = VDD or GND VDD = 10V, VIN = VDD or GND VDD = 15V, VIN = VDD or GND 1, 2 1, 2 1, 2 TEMPERATURE -55oC, +25oC MIN MAX UNITS µA - 5 +125oC - 150 µA -55oC, +25oC - 10 µA +125oC - 300 µA µA -55oC, +25oC - 10 +125oC - 600 µA Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC 4.95 - V Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC 9.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA -55oC 0.64 - mA +125oC 0.9 - mA -55oC 1.6 - mA +125oC 2.4 - mA -55oC 4.2 - mA +125oC - -0.36 mA -55oC - -0.64 mA +125oC - -1.15 mA -55oC - -2.0 mA +125oC - -0.9 mA -55oC - -1.6 mA +125oC - -2.4 mA -55oC - -4.2 mA +25oC, +125oC, - 3 V Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Input Voltage Low IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VIL VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V 1, 2 1, 2 1, 2 VDD = 5V, VOUT = 2.5V 1, 2 VDD = 10V, VOUT = 9.5V VDD =15V, VOUT = 13.5V VDD = 10V, VOH > 9V, VOL < 1V 7-1288 1, 2 1, 2 1, 2 -55oC Specifications CD40101BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Input Voltage High PARAMETER VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -55oC 7 - V Propagation Delay Data to Output TPHL1 TPLH1 VDD = 10V 1, 2, 3 +25oC - 300 ns VDD = 15V 1, 2, 3 +25oC - 200 ns 1, 2, 3 +25oC - 140 ns 1, 2, 3 +25oC - 100 ns VDD = 10V 1, 2, 3 +25oC - 100 ns VDD = 15V 1, 2, 3 +25oC - 80 ns 1, 2 +25oC - 7.5 pF Propagation Delay Inhibit to Output TPHL2 TPLH2 Transition Time VDD = 10V VDD = 15V TTLH TTHL Input Capacitance CIN Any Input NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Supply Current IDD N Threshold Voltage VNTH N Threshold Voltage Delta ∆VTN P Threshold Voltage VTP P Threshold Voltage Delta ∆VTP Functional F CONDITIONS NOTES TEMPERATURE VDD = 20V, VIN = VDD or GND 1, 4 +25oC VDD = 10V, ISS = -10µA 1, 4 +25oC VDD = 10V, ISS = -10µA 1, 4 +25oC VSS = 0V, IDD = 10µA 1, 4 VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND MAX UNITS - 25 µA -2.8 -0.2 V - ±1 V +25oC 0.2 2.8 V 1, 4 +25oC - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V MIN 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-2 IDD ± 1.0µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A CONFORMANCE GROUP 7-1289 READ AND RECORD Specifications CD40101BMS TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS 100% 5004 1, 7, 9 100% 5004 1, 7, 9, Deltas 100% 5004 1, 7, 9 100% 5004 1, 7, 9, Deltas 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 CONFORMANCE GROUP Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Group D READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9 Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD Static Burn-In 1 Note 1 6, 9 1-5, 7, 8, 10-13 14 Static Burn-In 2 Note 1 6, 9 7 1-5, 8, 10-14 Dynamic BurnIn Note 1 - 4, 7 12, 14 6, 9 7 1-5, 8, 10-14 Irradiation Note 2 9V ± -0.5V 50kHz 25kHz 6, 9 2, 3, 5, 8, 10 1, 11, 13 NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V 7-1290 CD40101BMS Logic Diagram 1 D1 INHIBIT 2 D2 VDD 8 3 D3 VSS EVEN OUT 4 D4 D5 D6 * 9 ODD OUT 10 ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK 6 11 TRUTH TABLE D7 D8 12 INPUTS 13 D1-D9 INHIBIT EVEN ODD Σ1’s = Even 0 1 0 Σ1’s = Odd 0 0 1 1 0 0 X 5 D9 OUTPUTS X = Don’t Care Logic 1 = High Logic 0 = Low FIGURE 1. AMBIENT TEMPERATURE (TA) = +25oC 30 OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) Typical Performance Characteristics GATE-TO-SOURCE VOLTAGE (VGS) = 15V 25 20 15 10V 10 5 5V 0 5 10 15 AMBIENT TEMPERATURE (TA) = +25oC 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 10V 7.5 5.0 2.5 5V 0 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 7-1291 CD40101BMS Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 0 -5 -10 -15 -10V -20 -25 -15V -30 0 GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 -10V -10 -15V FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS -15 FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC 400 TRANSITION TIME (tTHL, tTLH) (ns) PROPAGATION DELAY TIME (tPHL, tPLH) (ns) 0 AMBIENT TEMPERATURE (TA) = +25oC OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 (Continued) SUPPLY VOLTAGE (VDD) = 5V 300 200 10V 15V 100 200 SUPPLY VOLTAGE (VDD) = 5V 150 100 10V 15V 50 50 0 10 20 30 40 50 60 80 70 90 0 0 100 20 LOAD CAPACITANCE (CL) (pF) DYNAMIC POWER DISSIPATION (PD) (µW) FIGURE 6. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE AMBIENT TEMPERATURE (TA) = +25oC 104 8 SUPPLY VOLTAGE (VDD) = 15V 6 4 2 103 8 6 4 2 10V 102 8 6 4 2 10V 102 5V 8 6 4 2 CL = 50pF CL = 15pF 10 2 1 4 68 2 4 68 2 4 68 2 4 68 10 102 103 INPUT FREQUENCY (fIN) (kHz) 2 4 68 104 FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION AS A FUNCTION OF INPUT FREQUENCY 7-1292 CD40101BMS Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 1293 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029