CD40257BMS CMOS Quad 2 Line to 1 Line Data Selector/Multiplexer December 1992 Features Pinout • High Voltage Type (20V Rating) CD40257BMS TOP VIEW • 3-State Outputs • 100% Tested for Quiescent Current at 20V 16 VDD INPUT SELECT 1 • 5V, 10V and 15V Parametric Ratings • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC • Noise Margin (Over Full Package/Temperature Range) - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V A1 2 15 OUTPUT DISABLE B1 3 14 A4 D1 4 13 B4 A2 5 12 D4 B2 6 11 A3 D2 7 10 B3 VSS 8 9 D3 • Standardized Symmetrical Output Characteristics • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” Applications Functional Diagram • Digital Multiplexing • Shift Right/Shift Left Registers OUTPUT DISABLE • True/Complement Selection 15 Description A1 B1 CD40257BMS is a data selector/multiplexer featuring three state outputs which can interface directly with and drive data lines of bus oriented systems. A2 B2 4 D1 3 5 7 6 D2 11 A3 The CD40257BMS is supplied in these 16-lead outline packages: B3 Braze Seal DIP Frit Seal DIP Ceramic Flatpack B4 H4T H1E H3X 2 A4 9 10 D3 14 13 12 D4 1 INPUT SELECT CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 7-1442 VDD = 16 VSS = 8 File Number 3364 Specifications CD40257BMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current Input Leakage Current SYMBOL IDD IIL LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX 1 +25oC - 2 µA 2 +125oC - 200 µA VDD = 18V, VIN = VDD or GND 3 -55oC - 2 µA VIN = VDD or GND 1 +25oC -100 - nA nA CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VDD = 20 -1000 - VDD = 18V 3 -55oC -100 - nA VDD = 20 1 +25oC - 100 nA 2 +125oC - 1000 nA 3 -55oC - 100 nA - 50 mV 2 Input Leakage Current IIH VIN = VDD or GND oC UNITS VDD = 18V +125 o o o Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25 C, +125 C, -55 C Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA o Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25 C - -1.8 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC Functional F VOH > VOL < VDD/2 VDD/2 V Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V Input Voltage High (Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V Input Voltage Low (Note 2) VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC - 4 V Input Voltage High (Note 2) VIH VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC 11 - V Tri-State Output Leakage IOZL VIN = VDD or GND VOUT = 0V 1 +25oC -0.4 - µA 2 +125oC -12 - µA 3 -55oC -0.4 - µA 1 +25 oC - 0.4 µA 2 +125oC - 12 µA 3 -55oC - 0.4 µA VDD = 20V VDD = 18V Tri-State Output Leakage IOZH VIN = VDD or GND VOUT = VDD VDD = 20V VDD = 18V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 7-1443 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. Specifications CD40257BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Data Input Output Propagation Delay Select to Output SYMBOL TPHL1 TPLH1 TPHL TPLH2 GROUP A SUBGROUPS TEMPERATURE CONDITIONS VDD = 5V, VIN = VDD or GND (Notes 1, 2) VDD = 5V, VIN = VDD or GND (Notes 1, 2) Propagation Delay TPZH, HZ VDD = 5V, VIN = VDD or GND Output Disable to Output TPZL, LZ (Notes 2, 3) Transition Time TTHL TTLH VDD = 5V, VIN = VDD or GND (Notes 1, 2) 9 10, 11 9 10, 11 9 10, 11 9 10, 11 +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC LIMITS MIN MAX UNITS - 300 ns - 405 ns - 380 ns - 513 ns - 190 ns - 257 ns - 200 ns - 270 ns NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. 3. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS NOTES VDD = 5V, VIN = VDD or GND 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC VDD = 15V, VIN = VDD or GND Output Voltage VOL VDD = 5V, No Load 1, 2 1, 2 MIN MAX UNITS - 1 µA - 30 µA - 2 µA - 60 µA - 2 µA +125oC - 120 µA +25oC, +125oC, - 50 mV -55oC, +25oC -55oC Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC 4.95 - V Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC 9.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA -55oC 0.64 - mA Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V 1, 2 1, 2 1, 2 VDD = 5V, VOUT = 2.5V 1, 2 VDD = 10V, VOUT = 9.5V VDD =15V, VOUT = 13.5V 7-1444 1, 2 1, 2 +125oC 0.9 - mA -55oC 1.6 - mA +125oC 2.4 - mA -55oC 4.2 - mA +125oC - -0.36 mA -55oC - -0.64 mA +125oC - -1.15 mA -55oC - -2.0 mA +125oC - -0.9 mA -55oC - -1.6 mA +125oC - -2.4 mA -55oC - -4.2 mA Specifications CD40257BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS(Continued) LIMITS SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Input Voltage Low PARAMETER VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -55oC - 3 V Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -55oC +7 - V 1, 2, 3 +25oC - 140 ns Propagation Delay Data Input to Output TPHL1 TPLH1 Propagation Delay Select to Output TPHL2 TPLH2 VDD = 10V o VDD = 15V 1, 2, 3 +25 C - 100 ns VDD = 10V 1, 2, 3 +25oC - 170 ns o - 130 ns o - 100 ns o VDD = 15V 1, 2, 3 +25 C Propagation Delay TPZH, HZ VDD = 10V Output Disable to Output TPZL, LZ VDD = 15V 1, 2, 4 1, 2, 4 +25 C - 80 ns Transition Time VDD = 10V 1, 2, 3 +25oC - 100 ns VDD = 15V 1, 2, 3 +25oC - 80 ns - 7.5 pF Input Capacitance TTHL TTLH CIN +25 C o 1, 2 +25 C NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD N Threshold Voltage VNTH N Threshold Voltage Delta ∆VTN P Threshold Voltage VTP P Threshold Voltage Delta ∆VTP Functional F CONDITIONS NOTES TEMPERATURE VDD = 20V, VIN = VDD or GND 1, 4 +25oC VDD = 10V, ISS = -10µA 1, 4 +25oC VDD = 10V, ISS = -10µA 1, 4 +25oC VSS = 0V, IDD = 10µA 1, 4 VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND MAX UNITS - 7.5 µA -2.8 -0.2 V - ±1 V +25oC 0.2 2.8 V 1, 4 +25oC - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-1 IDD ± 0.2µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) 7-1445 MIN Specifications CD40257BMS TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A 100% 5004 1, 7, 9, Deltas 100% 5004 1, 7, 9 100% 5004 1, 7, 9, Deltas 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 CONFORMANCE GROUP PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Group D READ AND RECORD IDD, IOL5, IOH5A Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9 Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD Static Burn-In 1 (Note 1) 4, 7, 9, 12 1-3, 5, 6, 8, 10, 11, 13-15 16 Static Burn-In 2 (Note 1) 4, 7, 9, 12 8, 15 1-3, 5, 6, 10, 11, 13, 14, 16 Dynamic BurnIn (Note 1) - 8, 15 16 4, 7, 9, 12 8 1-3, 5, 6, 10, 11, 13-16 Irradiation (Note 2) 9V ± -0.5V 50kHz 25kHz 4, 7, 9, 12 2, 3, 5, 6, 10, 11, 13, 14 1 NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V 7-1446 Specifications CD40257BMS Logic Diagram TRUTH TABLE INPUTS OUTPUT DISABLE 15* INPUT SELECT 1* 3-STATE OUTPUT DISABLE SELECT A 1 X 0 0 0 VDD A1 2* OUTPUT D1 4 B D X X Z 0 X 0 0 1 X 1 0 1 X 0 0 0 1 X 1 X = Don’t care Logic 1 = High Z = High impedance B1 3* 1 Logic 0 = Low VSS A2 5* D2 7 VDD B2 6* A3 11* B3 D3 9 3 ADDITIONAL IDENTICAL CIRCUITS 10* VSS A4 14* B4 * D4 12 13* ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK FIGURE 1. AMBIENT TEMPERATURE (TA) = +25oC 30 OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) Typical Performance Characteristics GATE-TO-SOURCE VOLTAGE (VGS) = 15V 25 20 15 10V 10 5 5V 0 5 10 15 AMBIENT TEMPERATURE (TA) = +25oC 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 10V 7.5 5.0 2.5 5V 0 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 7-1447 CD40257BMS Typical Performance Characteristics (Continued) AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 0 -5 -10 -15 -10V -20 -25 -15V -30 0 GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 -10V -10 -15V FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS -15 FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 400 AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC TRANSITION TIME (tTHL, tTLH) (ns) PROPAGATION DELAY TIME (tPHL, tPLH) (ns) 0 AMBIENT TEMPERATURE (TA) = +25oC OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 300 200 SUPPLY VOLTAGE (VDD) = 5V 100 10V 200 SUPPLY VOLTAGE (VDD) = 5V 150 100 10V 15V 50 15V 0 0 20 60 80 40 LOAD CAPACITANCE (CL) (pF) 0 0 100 FIGURE 6. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE (DATA INPUT TO OUTPUT) POWER DISSIPATION PER (PD) (µW) 105 104 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE 8 6 4 AMBIENT TEMPERATURE (TA) = +25oC 2 SUPPLY VOLTAGE (VDD) = 15V 8 6 4 5V 2 103 20 8 6 4 10V 2 102 8 6 4 LOAD CAPACITANCE CL = 50pF CL = 15pF 2 10 2 1 4 68 2 4 68 2 4 68 2 4 68 10 102 103 104 INPUT FREQUENCY (fIN) (kHz) 2 4 68 105 FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION AS A FUNCTION OF INPUT FREQUENCY (ONE INPUT TO ONE OUTPUT) 7-1448 CD40257BMS Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 1449 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029