CD4028BMS CMOS BCD-To-Decimal Decoder December 1992 Features Pinout • High Voltage Type (20V Rating) CD4028BMS TOP VIEW • BCD-to-Decimal Decoding or Binary-to-Octal Decoding • High Decoded Output Drive Capability 4 1 16 VDD 2 2 15 3 0 3 14 1 7 4 13 B 9 5 12 C • Standardized Symmetrical Output Characteristics 5 6 11 D • 100% Tested For Quiescent Current at 20V 6 7 10 A VSS 8 9 8 • “Positive Logic” Inputs and Outputs - Decoded Outputs Go High On Selection • Medium-Speed Operation - tPHL, tPLH = 80ns (typ) at VDD = 10V • Maximum Input Current of 1µA at 18V Over Full Package-Temperature Range; - 100nA at 18V and +25oC • Noise Margin (Over Full Package Temperature Range): - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V Functional Diagram VDD 3-BIT BINARY INPUTS • 5V, 10V and 15V Parametric Ratings • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” 16 0 10 A 1 2 13 BCD INPUTS B 3 4 12 Applications C 5 6 11 • Code Conversion D 7 8 • Indication-Tube Decoder 9 • Address Decoding - Memory Selection Control 3 14 2 BUFFERED OCTAL DECODED OUTPUTS (1 OF 8) 15 1 6 7 4 BUFFERED DECIMAL DECODED OUTPUTS (1 OF 10) 9 5 8 VSS Description CD4028BMS types are BCD-to-decimal or binary-to-octal decoders consisting of buffering on all 4 inputs, decoding logic gates, and 10 output buffers. A BCD code applied to the four inputs, A to D, results in a high level at the selected one of 10 decimal decoded outputs. Similarly, a 3-bit binary code applied to inputs A through C is decoded in octal code at output 0 to 7 if D = “0”. High drive capability is provided at all outputs to enhance dc and dynamic performance in high fan-out applications. The CD4028BMS is supplied in these 16-lead outline packages: Braze Seal DIP H4S Frit Seal DIP H1E Ceramic Flatpack H3X CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 7-788 File Number 3303 Specifications CD4028BMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 GROUP A SUBGROUPS LIMITS TEMPERATURE MIN +25 - 10 µA +125oC - 1000 µA 3 -55oC - 10 µA 1 +25o C -100 - nA 2 +125oC -1000 - nA 3 -55oC -100 - nA 1 +25oC - 100 nA 2 +125oC - 1000 nA - 100 nA - 50 mV - V 3 Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V UNITS 1 -55oC VDD = 18V MAX 2 oC 1 +25oC 0.53 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA 1 +25oC - -0.53 mA 1 +25oC - -1.8 mA Output Current (Source) Output Current (Source) IOH5A IOH5B VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA 1 +25oC -2.8 -0.7 V 1 +25oC 0.7 2.8 V N Threshold Voltage P Threshold Voltage Functional VNTH VPTH F VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC VOH > VOL < VDD/2 VDD/2 V Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V Input Voltage High (Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V Input Voltage Low (Note 2) VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC - 4 V Input Voltage High (Note 2) VIH VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC 11 - V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 7-789 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. Specifications CD4028BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Transition Time SYMBOL TPHL TPLH CONDITIONS (NOTE 1, 2) GROUP A SUBGROUPS TEMPERATURE VDD = 5V, VIN = VDD or GND 9 10, 11 TTHL TTLH VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC +25oC +125oC, -55oC LIMITS MIN MAX UNITS - 350 ns - 473 ns - 200 ns - 270 ns NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS NOTES VDD = 5V, VIN = VDD or GND VDD = 10V, VIN = VDD or GND VDD = 15V, VIN = VDD or GND Output Voltage VOL VDD = 5V, No Load 1, 2 1, 2 1, 2 1, 2 TEMPERATURE o o -55 C, +25 C MIN MAX UNITS µA - 5 +125oC - 150 µA -55oC, +25oC - 10 µA +125oC - 300 µA - 10 µA +125oC - 600 µA +25oC, +125oC, - 50 mV -55oC, +25oC -55oC Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC 4.95 - V Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC 9.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA -55oC 0.64 - mA Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Input Voltage Low IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VIL VDD = 10V, VOUT = 0.5V 1, 2 VDD = 15V, VOUT = 1.5V 1, 2 VDD = 5V, VOUT = 4.6V 1, 2 VDD = 5V, VOUT = 2.5V 1, 2 VDD = 10V, VOUT = 9.5V 1, 2 VDD =15V, VOUT = 13.5V VDD = 10V, VOH > 9V, VOL < 1V 1, 2 1, 2 o +125 C 0.9 - mA -55oC 1.6 - mA +125oC 2.4 - mA -55oC 4.2 - mA +125oC - -0.36 mA -55oC - -0.64 mA +125oC - -1.15 mA -55oC - -2.0 mA +125oC - -0.9 mA -55oC - -1.6 mA +125oC - -2.4 mA -55oC - -4.2 mA +25oC, +125oC, - 3 V 7 - V -55oC Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 7-790 1, 2 +25oC, +125oC, -55oC Specifications CD4028BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL Propagation Delay TPHL TPLH Transition Time VDD = 10V TTHL TTLH Input Capacitance CONDITIONS NOTES TEMPERATURE MIN MAX UNITS 1, 2, 3 +25oC - 160 ns o VDD = 15V 1, 2, 3 +25 C - 120 ns VDD = 10V 1, 2, 3 +25oC - 100 ns 1, 2, 3 oC - 80 ns +25oC - 7.5 pF VDD = 15V CIN +25 1, 2 NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Supply Current IDD CONDITIONS VDD = 20V, VIN = VDD or GND NOTES TEMPERATURE MIN MAX UNITS 1, 4 +25oC - 25 µA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V N Threshold Voltage Delta ∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC - ±1 V P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V P Threshold Voltage Delta ∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns Functional F VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-2 IDD ± 1.0µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A 100% 5004 1, 7, 9, Deltas 100% 5004 1, 7, 9 100% 5004 1, 7, 9, Deltas CONFORMANCE GROUP PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) 7-791 READ AND RECORD IDD, IOL5, IOH5A Specifications CD4028BMS TABLE 6. APPLICABLE SUBGROUPS (Continued) MIL-STD-883 METHOD GROUP A SUBGROUPS 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 CONFORMANCE GROUP Final Test Group A Group B Group D READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9 Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD Static Burn-In 1 Note 1 1 - 7, 9, 14, 15 8, 10 - 13 16 Static Burn-In 2 Note 1 1 - 7, 9, 14, 15 8 10 - 13, 16 Dynamic BurnIn Note 1 - 8 16 1 - 7, 9, 14, 15 8 10 - 13, 16 Irradiation Note 2 9V ± -0.5V 50kHz 25kHz 1 - 7, 9, 14, 15 10, 12, 13 11 NOTE: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V 7-792 CD4028BMS Logic Diagram 3 0 * A 10 14 1 2 * B 15 3 13 * C 2 12 1 4 6 5 7 6 4 7 9 8 5 9 * D 11 VDD *ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK VSS TABLE 1. TRUTH TABLE D C B A 0 1 2 3 4 5 6 7 8 9 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 1 0 1 0 0 0 0 0 0 0 0 0 0 1 0 0 0 1 0 0 0 0 0 0 0 0 0 1 1 0 0 0 1 0 0 0 0 0 0 0 1 0 0 0 0 0 0 1 0 0 0 0 0 0 1 0 1 0 0 0 0 0 1 0 0 0 0 0 1 1 0 0 0 0 0 0 0 1 0 0 0 0 1 1 1 0 0 0 0 0 0 0 1 0 0 1 0 0 0 0 0 0 0 0 0 0 0 1 0 1 0 0 1 0 0 0 0 0 0 0 0 0 1 1 0 1 0 0 0 0 0 0 0 0 0 0 0 1 0 1 1 0 0 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 0 0 0 0 1 1 0 1 0 0 0 0 0 0 0 0 0 0 1 1 1 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 0 0 0 0 0 0 1 = HIGH LEVEL 0 = LOW LEVEL 7-793 CD4028BMS AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = 15V 25 20 15 10V 10 5 5V 0 5 10 AMBIENT TEMPERATURE (TA) = +25oC 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 10V 7.5 5.0 2.5 15 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) PROPAGATION DELAY TIME (tPHL, tPLH) (ns) FIGURE 1. TYPICAL OUTPUT LOW (SINK) CURRENT CAPACITANCE FIGURE 2. MINIMUM OUTPUT LOW (SINK) CURRENT CAPACITANCE DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC 0 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V 300 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 30 OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) Typical Performance Characteristics -5 250 -10 SUPPLY VOLTAGE (VDD) = 5V 200 -15 -10V 150 -20 10V 100 -25 -15V 50 -30 15V 0 10 20 30 40 50 60 70 80 90 100 LOAD CAPACITANCE (CL) (pF) FIGURE 3. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE 0 0 GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 -10V -15V 8 6 4 -10 -15 POWER DISSIPATION (PD) (µW) AMBIENT TEMPERATURE (TA) = +25oC 105 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 15V 2 104 8 6 4 103 10V 2 10V 8 6 4 5V 2 102 CL = 50pF 8 6 4 CL = 15pF 2 10 1 10 102 103 104 105 INPUT FREQUENCY (fI) (kHz) FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS FIGURE 6. TYPICAL DYNAMIC POWER DISSIPATION AS A FUNCTION OF INPUT FREQUENCY 7-794 CD4028BMS Typical Performance Characteristics (Continued) TRANSITION TIME (tTHL, tTLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC 200 SUPPLY VOLTAGE (VDD) = 5V 150 100 10V 15V 50 0 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE INPUTS Typical Applications The circuit shown in Figure 8 converts any 4-bit code to a decimal or hexadecimal code. Table 2 shows a number of codes and the decimal or hexadecimal number in these codes which must be applied to the input terminals of the CD4028BMS to select a particular output. For example: in order to get a high on output number 8 the input must be either an 8 expressed in 4-bit Binary code, a 15 expressed in 4-Bit Gray code, or a 5 expressed in Excess-3 code. 1/6 CD4069B A B C D CD4028BMS 0 1 2 3 4 5 6 7 8 9 A B C D CD4028BMS 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 16 OUTPUTS FIGURE 8. CODE CONVERSION CIRCUIT TABLE 2. CODE CONVERSION CHART INPUT CODES HEXADECIMAL C B A 0 0 0 0 0 0 0 0 0 1 1 1 0 0 1 0 2 3 0 0 1 1 3 2 0 1 0 0 4 7 0 1 0 1 5 6 2 0 1 1 0 6 4 3 1 0 1 1 1 7 5 4 2 1 0 0 0 8 15 5 1 0 0 1 9 14 6 1 0 1 0 10 12 7 4-2-2-1 D OUTPUT NUMBER AIKEN EXCESS-3 GRAY 4-BIT GRAY EXCESS-3 DECIMAL 4-BIT BINARY INPUTS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 2 2 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 3 3 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 1 4 4 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 3 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 4 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 5 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 6 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 9 7-795 CD4028BMS TABLE 2. CODE CONVERSION CHART (Continued) INPUT CODES HEXADECIMAL EXCESS-3 GRAY OUTPUT NUMBER C B A 1 0 1 1 11 13 8 1 1 0 0 12 8 9 5 6 1 1 0 1 13 9 6 7 7 1 1 1 0 14 11 8 8 1 1 1 1 15 10 7 9 4-2-2-1 D AIKEN 4-BIT GRAY EXCESS-3 DECIMAL 4-BIT BINARY INPUTS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 8 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 9 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 5 TUBE REQUIREMENTS 9 8 7 6 5 4 3 2 1 0 D C BCD INPUTS CD4028BMS B A VT TYPE 1 OF 10 NUMERALS BURROUGHS VT(Vdc) NUMERAL mA/ B4081 170 14 B4336/ 718 170 2 B4032 170 14 B4021 120 14 TRANSISTOR CHARACTERISTICS Leakage with transistor cutoff ≤ 0.05mA V(BR)CEO ≥ 70V *(TRADEMARK) BURROUGHS CORP. FIGURE 9. NEON READOUT (NIXIE TUBE*) DISPLAY APPLICATION INPUTS A B C D E F A B C INHIBIT (NO SELECTION) D CD4028BMS 012 3456789 * A B C D * A B C D * A B C D * A B C D * A B C D * A B C D * A B C D * A B C D CD4028BMS 0123456789 CD4028BMS 0123456789 CD4028BMS 0123456789 CD4028BMS 0123456789 CD4028BMS 0123456789 CD4028BMS 0123456789 CD4028BMS 0123456789 CD4028BMS 0123456789 0 12 3456 7 8 - - - - - - 15 16 - - - - - - 23 24 - - - - - - 31 32 - - - - - - 39 40 - - - - - - 47 48 - - - - - - 55 56 - - - - - - 63 *1/6 CD4069B 64 OUTPUTS (SELECTED OUTPUT IS HIGH) FIGURE 10. 6-BIT BINARY TO 1-OF-64 ADDRESS DECODER 7-796 CD4028BMS Chip Dimensions and Pad Layout Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch) METALLIZATION: Thickness: 11kÅ − 14kÅ, PASSIVATION: AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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