CHENMKO ENTERPRISE CO.,LTD CHT4403PT SURFACE MOUNT General Purpose Transistor VOLTAGE 40 Volts CURRENT 600 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE .019 (0.50) .041 (1.05) .033 (0.85) MARKING .066 (1.70) .119 (3.04) * PNP transistors in one package. .110 (2.80) .082 (2.10) (1) CONSTRUCTION (3) (2) .055 (1.40) .047 (1.20) C CIRCUIT .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) * 2F- .045 (1.15) .033 (0.85) (3) .002 (0.05) * Low colloector-emitter saturation. * High saturation current capability. .018 (0.30) SOT-23 * Small surface mounting type. (SOT-23) * High current gain. (1) B E (2) SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -40 V VCEO collector-emitter voltage open base − -40 V open collector − -5 V − -600 mA − 350 mW +150 °C VEBO emitter-base voltage IC collector current (DC) Ptot total power dissipation Tstg storage temperature −65 Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 2. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 2 2004-11 RATING CHARACTERISTIC CURVES ( CHT4403PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciped. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage collector-emitter breakdown voltage -40 -40 − V(BR)CEO IC = -100uA ; IE = 0A IC = -1mA ; IB = 0A V − V V(BR)EBO emitter-base breakdown voltage IE = -100uA ; IC = 0A -6 − V ICEX collector cut-off current IBL base cut-off current VEB(OFF) = -0.4V ; VCE = -35 V VEB(OFF) = -0.4V ; VCE = -35 V − − -100 -100 nA nA IC = -100uA; VCE = -1V 30 IC = -1 mA; VCE = -1V IC = -10 mA; VCE = -1V IC = -150 mA; VCE = -2V − − IC = -500 mA; VCE = -2V 60 100 100 20 hFE DC current gain − 300 − VCEsat collector-emitter saturation IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA − − -400 -750 mV mV VBEsat base-emitter saturation voltage IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA -750 − -950 -1300 mV mV Ccb VCB=-10V; f=1.0MHZ; IE=0 − − 1.5 0.1 8.5 30 15 8.0 pF pF KΩ hre hfe hoe output capacitance input capacitance input impedance voltage feedback ratio small signal current gain output impedance 60 1.0 500 100 µS fT transition frequency IC = -20 mA; VCE = - 10 V f = 100 MHz 200 − MHz td tr delay time rise time VCC=-30V; IC=-150mA VBE(off)=-2.0V; IB1=-15mA ts storage time tf fall time VCC=-30V; IC=-150mA IB1=IB2=-15mA − − − − 15 20 225 30 nS nS nS nS Ceb hie VEB=-0.5V; f=1.0MHZ; IC=0 VCE=-10V; f=1.0KHZ; IC=-1.0mA x10 -4 RATING CHARACTERISTIC CURVES ( CHT4403PT ) 1K V CE = 1V 25 °C 100 10 1 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Typical Capacitance CAPACITANCE (pF) 30 f = 1MHz 20 C ibo 10 5.0 Cobo 1.0 -0.1 -1 -10 REVERSE BIAS VOLTAGE (V) -50 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) Typical DC Current Gain vs Collector Current V BE(ON) - BASE-EMITTER ON VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN TR1 CHT4403 Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.5 IC /I B =10 0.4 0.3 0.2 25 °C 0.1 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Base-Emitter ON Voltage vs Collector Current 1 0.8 0.6 V CE = 5V - 50 °C 25 °C 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100