CHENMKO ENTERPRISE CO.,LTD CHT5551PT SURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 .019 (0.50) .041 (1.05) .033 (0.85) FT .066 (1.70) CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) (3) (2) .055 (1.40) .047 (1.20) .007 (0.177) .045 (1.15) .033 (0.85) 3 CIRCUIT .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .002 (0.05) CONSTRUCTION *NPN SILICON Transistor .018 (0.30) FEATURE * Small flat package. ( SOT-23 ) * Suitable for high packing density. 1 2 SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − collector-emitter voltage open base − 180 160 V VCEO VEBO emitter-base voltage open collector − 6.0 V IC collector current (DC) − 600 mA Ptot total power dissipation − 350 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 V Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-8 RATING CHARACTERISTIC CURVES ( CHT5551PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 417 °C//W Note 1.Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VCB = 120 V − 50 ICBO collector cut-off current VCB = 120 V,TA=100OC − 50 nA uA IEBO emitter cut-off current VEB=4.0V − 50 nA hFE DC current gain IC = 1.0 mA; V CE = 5V IC = 10mA; VCE = 5V IC = 50 mA; VCE =5V VCEsat VBEsat Cob collector-emitter saturation voltage base-emitter saturation voltage collector capacitance hfe 80 − 80 30 250 − IC = 10 mA; IB = 1.0 m A − 0.15 V IC =-50 mA; IB = 5.0 m A − − 0.2 1.0 V V IC =10mA; IB =1.0mA − 1.0 V − 6.0 pF VCE=10V,IC=1.0mA,f=1.0KHz 50 200 100 IC =-50 mA; IB = 5.0 m A IE = ie = 0; VCB = 1 0 V; f = 1 MHz fT transition frequency IC = 10 mA; VCE = 1 0 V; f = 1.0 MHz F noise Þgure IC = 200 mA; VCE = 5 V; RS = 1 0 Ω; − f =10Hz to 15.7KHz 300 MHz 8.0 dB 300 200 100 V CE = 5V Tj=125 °C Tj=25 °C Tj=-55 °C 30 20 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1.0 Ic/IB=10 0.8 0.6 0.4 0.2 0 0.1 I C 1.0 10 - COLLECTOR CURRENT (mA) 100 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) 500 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current V BESAT - BASE-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN RATING CHARACTERISTIC CURVES ( CHT5551PT) Collector-Emitter Saturation Voltage vs Base Current 1.0 0.8 Ic=10mA 0.6 0.4 0.2 0 0.1 0.2 0.3 0.5 I B - BASE CURRENT (mA) 1.0 Collector-Emitter Saturation Voltage vs Collector Current 1.0 Ic/IB=10 0.8 0.6 0.4 0.2 0 0.1 I C 1.0 10 - COLLECTOR CURRENT (mA) 100