CHENMKO ENTERPRISE CO.,LTD CHT847BVPT SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 45 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SOT-563 * Small surface mounting type. (SOT-563) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. (1) (5) 0.50 0.9~1.1 1.5~1.7 0.50 CONSTRUCTION 0.15~0.3 * Two NPN transistors in one package. (4) (3) 1.1~1.3 MARKING * V3 0.5~0.6 0.09~0.18 CIRCUIT C1 B2 E2 6 5 4 1.5~1.7 TR2 TR1 1 2 3 E1 B1 C2 SOT-563 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS UNIT V CBO collector-base voltage open emitter 50 V V CEO collector-emitter voltage open base 45 V VEBO emitter-base voltage open collector 6 V IC collector current (DC) 0.1 A PC Collector power dissipation 150 Tstg Tj storage temperature junction temperature Note 1. Transistor mounted on an FR4 printed-circuit board. mW −55~+150 °C +150 °C 2004-07 RATING CHARACTERISTIC ( CHT847BVPT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO BVCBO BVCEO BVEBO hFE VCEsat PARAMETER CONDITIONS IE = 0; VCB = 30 V collector cut-off current IC = 0; VCB = 30 V; TA = 150 OC collector-base breakdown voltage IC =50uA collector-emitter breakdown voltage IC =1mA IE =50uA emitter-base breakdown voltage VCE /I C =5V/2 mA current transfer ratio DC I C = 10 mA ; I B = 0.5 mA collector-emitter saturation IC = 100 mA ; I B = 5 mA voltage MIN. − − 50 45 6 200 − − Typ. − − − − − − − − UNIT MAX. 15 nA 5 uA V − V − − V 450 100 mV VBEsat base-emitter satur ation voltage IC = 10 mA;IB = 0.5 mA − 700 − mV mV Cib emitter input capacitance − 8 − pF − 3 200 − pF − − MHz Cob collector output capacitance IC = 0; VCB = 0.5V ; f = 1 MH z IE = 0; VCB = -10V ; f = 1 MH z fT transition frequency IE = -20 mA; VCE = 5 V ; f = 100 MHz 300 Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. RATING CHARACTERISTIC CURVES ( CHT847BVPT) fig2.Co llector-Emitter Saturation Voltage vs Collector Current 600 500 400 300 50 200 100 IB=0uA 0 0 O Ta=25 C 10 COLLECTOR-EMITTERVOLTAGE : VCE(V) 5 O VOLTAGE : VCE(Sat)(V) 100 COLLECTOR EMITTER SATURATION COLLECTOR CURRENT : Ic (mA) fig1.Griunded emitter output characteristics Ta=25 C IC/IB=10 0.3 0.2 0.1 0 1.0 10 100 I C - COLLECTOR CURRENT (mA) 1000 RATING CHARACTERISTIC CURVES ( CHT847BVPT) fig3.DC current gain VS. collector current ( 1 ) 100 1V AC CURRENT GAIN : hFE O Ta=25 C VCE=10V f=1KHZ 100 10 0.1 1 10 100 1000 BASE EMITTER VOLTAGE : VBE(ON)(V) I C - COLLECTO CURRENT (mA) fig7.Grounded emitter propagation characteristics 1.8 1.6 O Ta=25 C VCE=10V 1.2 0.8 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) Ta=125O C 25 OC -55 C 100 1 10 100 1000 I C - COLL ECTOR CURRENT (mA) fig5.AC current gain VS. collector current 1000 O Ta=25 C O 10 0.1 1000 BASE EMITTER SATURATION VOLTAGE : VBE(Sat)(V) 1 10 100 I C - COLLECTO CURRENT (mA) DC CURRENT GAIN : hFE VCE=10V 10 0.1 1000 O Ta=25 C 1000 fig6.Base-emitter saturation voltage VS. collector current 1.8 O Ta=25 C IC/IB=10 1.6 1.2 0.8 0.4 0 1.0 10 100 1000 I C - COLLECTO CURRENT (mA) fig8.Turn-on time VS. collector current 1000 TURN ON TIME : ton(ns) DC CURRENT GAIN : hFE 1000 fig4.DC current gain VS. collector current ( 2 ) O Ta=25 C IC/IB=10 10 0 VCC=30V 10V 10 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 RATING CHARACTERISTIC CURVES ( CHT847BVPT) fig9.Rise time VS. collector current fig10.Fall time VS. collector current 500 O Ta=25 C Vcc=30V IC/IB=10 FALL TIME : tr(ns) RISE TIME : tr(ns) 500 100 O Ta=25 C Vcc=30V 100 10 5 1.0 100 10 I C - COLLECTO CURRENT (mA) 1000 fig11.Input / output capacitance VS. voltage CAPAITANCE(pF) 100 O Ta=25 C f=1MHZ Cib 10 1 0.1 Cob 1.0 10 REVERSE BIAS VOLTAGE(V) 100 10 1.0 100 10 I C - COLLECTO CURRENT (mA) 1000