CHENMKO ENTERPRISE CO.,LTD CHT44PT SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Video out to drive color CRT * Other high voltage applications. SOT-23 * NPN High Voltage Transistor .066 (1.70) CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) (3) (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) .086 (2.20) CIRCUIT C (3) E (2) .007 (0.177) * T44 .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) .002 (0.05) * Low voltage (Max.=300V) . * High saturation current capability. .019 (0.50) .041 (1.05) .033 (0.85) * Small surface mounting type. (SOT-23) * Low current (Max.=500mA). * Suitable for high packing density. .018 (0.30) FEATURE (1) B SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 500 VCEO collector-emitter voltage open base − 400 V VEBO emitter-base voltage open collector − 6 V IC collector current DC − 300 mA ICM peak collector current − 300 mA IBM peak base current − 30 mA Ptot total power dissipation − 350 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Tamb ≤ 25 °C; note 1 V Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-5 RATING CHARACTERISTIC CURVES ( CHT44PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 357 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 4 0 0 V − 0.1 uA IEBO emitter cut-off current IC = 0; VEB = 4 V − 0.1 uA hFE DC current gain VCE = 10V; note 1; IC = 1.0 mA 40 − IC = 10 mA 50 240 IC = 50 mA 45 − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 500 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA − 750 mV Ccb collector-base capacitance IE = ie = 0; VCB = 2 0 V ; f = 1 MHz − 7 pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 50 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. RATING CHARACTERISTIC CURVES ( CHT44PT ) Fig.1 DC current gain Fig.2 Turn-on switching times Fig.3 Turn-off switching times 2 10 140 100 VCE=150V Ic/IB=10 Ta=25°C VCE=150V Ic/IB=10 Ta=25°C VBE(OFF)=4V 120 80 60 40 Time( s) VCE=10V Time( s) 0 10 20 -20 0 10 Td 0 10 1 10 2 10 3 10 -1 10 0 10 4 10 1 10 0 10 Fig.4 Capacitance Fig.5 ON Voltage Fig.6 Collector saturation region 0.5 0.8 VBE(sat),Ic/IB=10 2 10 1 10 voltage(V) Cib 0.6 VBE(ON),VCE=10V 0.4 Cob VCE(sat),Ic/IB=10 0.2 0 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 Collector voltage(V) Ic,Collector current(mA) Fig.7 High Frequency current gain Fig.8 Safe operating area 3 10 2 10 Ic,Collector current(mA) 3 10 C 1 10 0.1ms C 5° 0 10 1s 2 10 5° =2 Tc 0 10 Valid Duty Cycle<10% 1ms 3 10 =2 Ta Ic,Collector current(mA) 1 10 1 10 0 10 Ic=1mA Ic=10mA Ic=50mA 0.3 0.2 0.1 Ta=25°C MPSA44 0 10 1 10 2 10 3 10 Collector voltage(V) 1 10 2 10 3 10 4 10 Ib, base current( A) 4 10 VCE=10V f=10MHz Ta=25°C 0.4 0 3 10 2 10 -1 10 2 10 Ic,Collector current(mA) 1.0 0 10 1 10 Ic,Collector current(mA) Ta=25°C -1 10 -1 10 2 10 Ic,Collector current(mA) 3 10 Capacitance(pF) Ts Tf -40 Small signal current gain,HFE 1 10 Tf 0 Collector-Emitter voltage(V) HFE,DC current current gain 1 10 4 10 5 10