MITSUBISHI IGBT MODULES CM20AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM20AD00-12H ¡IC ..................................................................... 20A ¡VCES ............................................................ 600V ¡Insulated Type ¡CIB Module 3φ Inverter + 3φ Converter + Brake Thyristor + Thermistor + Current shunt resistor APPLICATION AC & DC motor controls, General purpose inverters OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 100 90±0.25 8 8 8 8 GT P1 8 0.8 2.54 2.54 2.54 7.62 7.62 N1 EVP 13 GVP EWP P 1 2-φ4.5±0.25 MOUNTING HOLES 12 GUP EUP P2 N 8 (1) 7.5 5 GWP t=0.6 MAIN CIRCUIT TERMINAL φ6 φ6 φ2.5 18 56 5 5 53±0.5 18 φ2.5 PPS 0.6 t=0.6 PPS R S T B U V TH2 W GB E 8 8 TH1 7.5 8 8 8 8 2.54 90±0.3 8 P1 GT 8 2.54 2.54 2.54 2.54 R S 13 4 10 T LABEL CONTROL CIRCUIT TERMINAL 2-R5 GUN GVN GWN P2 P B GUP GVP GWP EUP EVP EWP GUN GVN GWN GB N1 TH1 TH2 (sense terminal) N U V W E CIRCUIT DIAGRAM Sep. 2000 MITSUBISHI IGBT MODULES CM20AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) INVERTER PART Symbol Parameter Collector-emitter voltage VCES VGES Gate-emitter voltage IC Collector Current I CM I E (Note.1) Emitter Current I EM (Note.1) PC (Note.3) Maximum collector dissipation Conditions G-E Short C-E Short TC = 25°C PULSE TC = 25°C PULSE TC = 25°C (Note. 2) (Note. 2) Rating 600 ±20 20 40 20 40 62 Unit V V A A A A W Rating 600 ±20 20 40 59 600 20 Unit V V A A W V A Rating Unit 800 220 20 200 165 V V A A A2s Rating 800 800 20 Unit V V A 200 A 10 1 3 10 5 100 W W A V V A/µs Rating Unit –40 ~ +150 –40 ~ +125 –40 ~ +125 2500 1.47 ~ 1.96 120 °C °C °C V N·m g BRAKE PART Symbol VCES VGES IC I CM PC (Note.3) VRRM I FM (Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum collector dissipation Repetitive peak reverse voltage Forward current Conditions G-E Short C-E Short TC = 25°C PULSE TC = 25°C Clamp diode part Clamp diode part (Note. 2) CONVERTER PART Symbol VRRM Ea IO I FSM I 2t Parameter Conditions Repetitive peak reverse voltage Recommended AC input voltage DC output current 3φ rectifying circuit Surge (non-repetitive) forward current 1/2 cycle at 60Hz, peak value, Non-repetitive I2t for fusing Value for one cycle of surge current THYRISTOR PART Symbol VDRM VRRM IT(AV) Parameter Conditions Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Single-phase, half-wave 180° conduction ITSM Surge (non-repetitive) on-state current PGM PG(AV) IFGM VFGM VRGM di/dt Peak gate power dissipation Average gate power dissipation Peak gate forward current Peak gate forward voltage Peak gate reverse voltage Critical rate of rise of on-state Current IG =100mA, VD=400V, dIG /dt=1A/µs 1/2 cycle at 60Hz, peak value Non-repetitive COMMON RATING Symbol Tj Tj Tstg Viso — — Parameter Junction temperature Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions Inverter, brake, converter part Thyristor part AC 1 min. Mounting M4 screw Typical value Sep. 2000 MITSUBISHI IGBT MODULES CM20AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj = 25°C) INVERTER PART Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit I CES Collector cutoff current VCE = VCES, V GE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 2.0mA, VCE = 10V 4.5 6 7.5 V — — — — — — — — — — — — — — — — — 2.1 2.15 — — — 60 — — — — — — 0.05 — — 0.5 2.8 — 2.0 1.5 0.4 — 120 300 200 300 2.8 110 — 2.0 3.1 µA Limits Typ. — Max. 1 VGE = VGES , VCE = 0V Tj = 25°C Collector-emitter saturation voltage IC = 20A, VGE = 15V VCE(sat) Tj = 150°C Input capacitance Cies VCE = 10V Output capacitance Coes VGE = 0V Cres Reverse transfer capacitance QG VCC = 300V, IC = 20A, VGE = 15V Total gate charge t d(on) Turn-on delay time VCC = 300V, IC = 20A tr Turn-on rise time VGE1 = VGE2 = 15V t d(off) RG = 31Ω Turn-off delay time tf Turn-off fall time Resistive load VEC(Note.1) Emitter-collector voltage IE = 20A, VGE = 0V t rr (Note.1) Reverse recovery time IE = 20A, VGE = 0V Qrr (Note.1) Reverse recovery charge diE / dt = – 40A / µs Rth(j-c)Q IGBT part, Per 1/6 module Thermal resistance Rth(j-c)R FWDi part, Per 1/6 module I GES Gate-emitter cutoff current (Note.4) mA V nF nF nF nC ns ns ns ns V ns µC °C/W °C/W BRAKE PART Symbol Parameter Test conditions Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 2.0mA, VCE = 10V 4.5 6 7.5 V IGES Gate-emitter cutoff current — — — — — — — — — — — 2.1 2.15 — — — 60 — — — 0.5 2.8 — 2.0 1.5 0.4 — 2.8 2.1 3.2 µA Min. — — — Limits Typ. — — — Max. 8 1.5 3.1 VCE(sat) Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R VGE = VGES, V CE = 0V Tj = 25°C IC = 20A, VGE = 15V Collector-emitter saturation voltage Tj = 150°C Input capacitance VCE = 10V Output capacitance VGE = 0V Reverse transfer capacitance VCC = 300V, IC = 20A, VGE = 15V Total gate charge IF = 20A, Clamp diode part Forward voltage drop IGBT part Thermal resistance Clamp diode part (Note.4) mA V nF nF nF nC V °C/W °C/W CONVERTER PART Symbol I RRM V FM Rth(j-c) Parameter Repetitive reverse current Forward voltage drop Thermal resistance Test conditions VR = VRRM, Tj = 150°C IF = 20A Per 1/6 module Unit mA V °C/W Sep. 2000 MITSUBISHI IGBT MODULES CM20AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE THYRISTOR PART Symbol Parameter Test conditions Repetitive peak off-state current VD=800V Repetitive peak reverse current VR=800V IT =20A, instantaneous means On-state voltage IDRM IRRM ITM IGT Gate trigger current Gate trigger voltage VD=6V, IT=1A VD=6V, IT=1A dv/dt Critical rate of rise of off-state Voltage Tj=125°C, VD=540V, exp. waveform IH Rth(j-c) Holding current Thermal resistance VGT Min. — Limits Typ. — Max. 1 — — — — 1 1.55 mA V — — — — 50 3 mA V 500 — — V/µs — — 50 — — 1.75 °C/W Min. — — Limits Typ. 100 4000 Max. — — Unit mA mA THERMISTOR PART Symbol Parameter Resistance B Constant RTH B Test conditions TC = 25°C Resistance at 25°C, 50°C (Note.5) Unit kΩ K RESISTOR PART Symbol R — Parameter Resistance Temperature coefficient Test conditions Measured between N-N1 Limits Min. — — Typ. 3.4 0.079 Max. — — Min. Limits Typ. Max. — 0.05 — Unit mΩ %/°C COMMON RATING Symbol Rth(c-f) Note. 1 2 3 4 5 Parameter Contact thermal resistance Test conditions Case to fin, Thermal compound applied* 1 (1 module) Unit °C/W IE, VEC, t rr, Q rr, di E/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed T jmax rating. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. B = (InR1-InR2)/(1/T1-1/T2) R 1 : Resistance at T1(K) R 2 : Resistance at T2(K) *1 : Typical value is measured by using Shin-etsu Silicone “G-746”. Sep. 2000