MITSUBISHI IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B S(4 - Mounting Holes) F E H G E R L M GvP EvP GuP EuP C TC Measured Point D TC Measured Point 4 - M4 NUTS U V J J E GuN GvN EuN EvN Q Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of four IGBTs in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. L H K F V P W N G TAB#110 t=0.5 V T U X Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking P GuP EuP U GvP EvP V GuN EuN GvN EvN N Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters 72.0 M 0.74 18.7 55±0.25 N 0.02 0.5 91.0 P 1.55 39.3 Q 0.63 16.0 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies A 2.83 B 2.17±0.01 C 3.58 D 2.91±0.01 E 0.43 11.0 R 0.57 F 0.79 20.0 S 0.22 Dia. G 0.69 17.5 T 0.32 8.1 H 0.75 19.1 U 1.02 26.0 J 0.39 10.0 V 0.59 15.0 Type Current Rating Amperes VCES Volts (x 50) K 0.41 10.5 W 0.20 5.0 CM 75 12 L 0.05 X 1.61 41.0 74.0±0.25 1.25 14.4 5.5 Dia. Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM75BU-12H is a 600V (VCES), 75 Ampere FourIGBT Module. Sep.1998 MITSUBISHI IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM75BU-12H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 75 Amperes ICM 150* Amperes IE 75 Amperes Peak Emitter Current** IEM 150* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 310 Watts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Mounting Torque, M4 Main Terminal – 1.3 ~ 1.7 N·m Mounting Torque, M5 Mounting – 2.5 ~ 3.5 N·m – 390 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts IC = 75A, VGE = 15V, Tj = 125°C – 2.6 – Volts Total Gate Charge QG VCC = 300V, IC = 75A, VGE = 15V – 150 – nC Emitter-Collector Voltage* VEC IE = 75A, VGE = 0V – – 2.6 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time tr Switch Turn-off Delay Time Times Fall Time Test Conditions Max. Units – – 6.6 nF – – 3.6 nF – – 1.0 nF VCC = 300V, IC = 75A, – – 100 ns VGE1 = VGE2 = 15V, – – 250 ns VCE = 10V, VGE = 0V Min. Typ. td(off) RG = 8.3Ω, Resistive – – 200 ns tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time trr IE = 75A, diE/dt = -150A/µs – – 160 ns Diode Reverse Recovery Charge Qrr IE = 75A, diE/dt = -150A/µs – 0.18 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/4 Module Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/4 Module – Rth(c-f) Per Module, Thermal Grease Applied – Contact Thermal Resistance Min. – Typ. Max. Units 0.4 °C/W – 0.9 °C/W 0.025 – °C/W – Sep.1998 MITSUBISHI IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE 150 VGE = 20V 120 5 13 14 12 90 11 60 10 30 9 VCE = 10V Tj = 25°C Tj = 125°C 125 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 100 75 50 25 8 0 0 0 2 4 6 8 2 1 4 8 12 16 0 20 30 60 90 120 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 IC = 150A 8 IC = 75A 6 4 2 101 102 101 Cies 100 Coes 10-1 Cres VGE = 0V IC = 30A 100 .06 0 4 8 12 16 20 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 2.2 2.6 tf tr 101 COLLECTOR CURRENT, IC, (AMPERES) 100 102 102 101 Irr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 102 GATE CHARGE, VGE 102 trr 101 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) di/dt = -150A/µsec Tj = 25°C td(off) REVERSE RECOVERY TIME, trr, (ns) VCC = 300V VGE = ±15V RG = 8.3 Ω Tj = 125°C 10-2 10-1 3.0 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) td(on) 100 100 1.8 103 103 101 1.4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 1.0 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 150 Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 3 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C 4 0 0 10 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 75A 16 VCC = 200V 12 VCC = 300V 8 4 0 0 50 100 150 200 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM75BU-12H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.4°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.9°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998