MITSUBISHI IGBT MODULES CM10MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE CM10MD-12H ¡IC ..................................................................... 10A ¡VCES ............................................................ 600V ¡Insulated Type ¡CIB Module 3φ Inverter+3φ Converter+Brake ¡UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm P 2.54 2.54 2.54 2.54 R S T 2.54 2.54 2.54 7.5 8 P1 GU GV GW B EU EV EW GB GU GV GW 8 12.28 7.62 7.62 7.62 E GW N GU GV GW N GB GV E GU S T B 9 ±0.1 U V W 53 ±0.5 54 R V W CIRCUIT DIAGRAM 2 - φ4.8 ±0.1 MOUNTING HOLES 64 ±0.5 9 ±0.1 LABEL U 26.5 ±0.3 P1 EW 32 P EV 26.5 ±0.3 EU 2 - φ4.8 ±0.2 GUIDE HOLE 2 8 16.5 5 8 8 12.5 12.5 8 1 8 0.8 t = 0.5 80 ±0.3 t = 0.5 (30°) +1.0 –0.5 +1.0 –0.5 5.3 5 90 ±0.5 MAIN CIRCUIT TERMINAL CONTROL CIRCUIT TERMINAL Note. Not use the guiding holes to mount on the cooling fin. Feb.1999 MITSUBISHI IGBT MODULES CM10MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation Condition G – E Short C – E Short TC = 25°C PULSE TC = 25°C PULSE Tf = 25°C (Note. 2) (Note. 2) Rating 600 ±20 10 20 10 20 36 Unit Rating Unit 600 ±20 10 20 36 600 10 V V A A W V A Rating 800 220 10 100 42 Unit Rating –40 ~ +150 –40 ~ +125 2500 1.47 ~1.96 60 Unit V V A A A A W BRAKE PART Symbol VCES VGES IC ICM PC (Note. 3) VRRM IFM (Note. 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum Collector dissipation Repetitive peak reverse voltage Forward current Condition G – E Short C – E Short TC = 25°C PULSE Tf = 25°C Clamp diode part Clamp diode part (Note. 2) CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition 3φ rectifying circuit 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current V V A A A 2s COMMON RATING Symbol Tj Tstg Viso — — Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition AC 1 min. Mounting M4 screw Typical value °C °C V N.m g Feb.1999 MITSUBISHI IGBT MODULES CM10MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS INVERTER PART (Tj = 25°C) VCE = VCES, VGE = 0V Min. — Limits Typ. — Max. 1 IC = 1mA, VCE = 10V 4.5 6 7.5 V VGE = VGES, VCE = 0V Tj = 25°C IC = 10A, VGE = 15V Tj = 150°C — — — — — — — — — — — — — — — — — 2.1 2.15 — — — 30 — — — — — — 0.03 — — 0.5 2.8 — 1.0 0.9 0.2 — 120 300 200 300 2.8 110 — 3.5 4 µA VCE = VCES, VGE = 0V Min. — Limits Typ. — Max. 1 IC = 1mA, VCE = 10V 4.5 6 7.5 V VGE = VGES, VCE = 0V Tj = 25°C IC = 10A, VGE = 15V Tj = 150°C — — — — — — — — — — — 2.1 2.15 — — — 30 — — — 0.5 2.8 — 1 0.9 0.2 — 1.5 3.5 3.6 µA Min. — — — Limits Typ. — — — Max. 8 1.5 3.6 Parameter Symbol Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) ICES Test conditions (Note. 4) VCE = 10V VGE = 0V VCC = 300V, IC = 10A, VGE = 15V VCC = 300V, IC = 10A VGE1 = VGE2 = 15V RG = 63Ω Resistive load IE = 10A, VGE = 0V IE = 10A, VGE = 0V die / dt = – 20A / µs IGBT part, Per 1/6 module FWDi part, Per 1/6 module Unit mA V nF nF nF nC ns ns ns ns V ns µC °C/W °C/W BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Collector-to-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Cies Coes Cres QG VFM Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) Condition VCE = 10V VGE = 0V VCC = 300V, IC = 10A, VGE = 15V IF = 10A, Clamp diode part IGBT part Clamp diode part (Note. 4) Unit mA V nF nF nF nC V °C/W °C/W CONVERTER PART Symbol Parameter Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance Note 1. 2. 3. 4. 5. Condition VR = VRRM, Tj = 150°C IF = 10A Per 1/6 module Unit mA V °C/W IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance is specified under following conditions. • The conductive greese applied, between module and fin. • Al plate is used as fin. Feb.1999 MITSUBISHI IGBT MODULES CM10MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) VGE=20 (V) 16 Tj=25°C 20 15 VCE = 10V 12 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 20 TRANSFER CHARACTERISTICS (TYPICAL) 11 12 8 10 4 9 8 7 0 0 1 2 3 4 5 6 7 8 8 4 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 VGE = 15V Tj = 25°C Tj = 125°C 4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 12 0 9 10 5 3 2 1 0 0 4 8 12 16 6 IC = 20A 5 IC = 10A 4 3 2 1 IC = 4A 0 2 4 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 101 CAPACITANCE Cies, Coes, Cres (nF) 3 2 101 7 5 3 2 100 8 7 COLLECTOR CURRENT IC (A) Tj = 25°C 7 5 Tj = 25°C 9 0 20 102 EMITTER CURRENT IE (A) 16 7 5 VGE = 0V 3 2 100 7 5 Cies Coes 3 2 10–1 7 5 3 2 Cres 4.0 10–2 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 0 0.8 1.6 2.4 3.2 Feb.1999 MITSUBISHI IGBT MODULES CM10MD-12H HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tf 3 2 td(off) 102 td(on) 7 5 3 2 101 0 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – f) VCC = 300V VGE = ±15V RG = 63Ω Tj = 125°C tr 2 3 5 7 101 2 2 5 3 3 2 2 102 trr 100 7 5 Irr 7 5 3 3 2 2 2 3 5 7 100 10–1 2 3 5 7 101 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25°C Rth(j – f) = 3.5°C/W 100 5 101 –1 10 5 7 102 3 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – f) SWITCHING TIMES (ns) 7 5 REVERSE RECOVERY TIME trr (ns) 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 –di/dt = 20A / µs 7 7 Tj = 25°C REVERSE RECOVERY CURRENT lrr (A) MEDIUM POWER SWITCHING USE INSULATED TYPE 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25°C 2 100 Rth(j – f) = 4.0°C/W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) VGE – GATE CHARGE (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 10A 18 16 VCC = 200V 14 VCC = 300V 12 10 8 6 4 2 0 0 10 20 30 40 50 GATE CHARGE QG (nC) Feb.1999