CONFIDENTIAL Revision: C Prepared by S.Iura Date I.Umezaki 5-Sep.-2011 MITSUBISHI HVIGBT MODULES CM2400HC-34N th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC WRITTEN PERMISSION OF MITSUBISHI ELECTRIC CORPORATION CM2400HC-34N ●IC ……………………… 2400 A ●VCES …………………… 1700 V ●Insulated Type ●1-element in a Pack ●AlSiC Baseplate ●Trench Gate IGBT : CSTBTTM ●Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Dimensions in mm HVM-1035-C 1 of 7 CONFIDENTIAL MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES MAXIMUM RATINGS Symbol Conditions Item Ratings Unit VCES Collector-emitter voltage VGE = 0V, Tj = 25 °C 1700 V VGES Gate-emitter voltage VCE = 0V, Tj = 25 °C ± 20 V DC, Tc = 75 °C (Note 1) Pulse DC (Note 1) Pulse 2400 4800 2400 4800 A A A A 13100 W IC ICM IE IEM Collector current Emitter current (Note 2) Pc Maximum power dissipation (Note 3) Viso Isolation voltage Tj Junction temperature Tc = 25 °C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1min. 4000 V −40 ~ +150 °C Top Operating temperature −40 ~ +125 °C Tstg Storage temperature −40 ~ +125 °C Tpsc Maximum short circuit pulse width 10 µs VCC =1200V, VCE ≤ VCES, VGE =15V, Tj =125°C ELECTRICAL CHARACTERISTICS Symbol ICES Item — 8.0 Tj = 125 °C 16.0 VCE = 10 V, IC = 240 mA, Tj = 25 °C 6.0 7.0 8.0 V VGE = VGES, VCE = 0V, Tj = 25°C — — 0.5 µA nF Gate-emitter threshold voltage Gate leakage current Input capacitance Cres Reverse transfer capacitance Qg Total gate charge VCE(sat) Collector-emitter saturation voltage td(on) Turn-on delay time tr Turn-on rise time Turn-on switching energy VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25 °C VCC = 850 V, IC = 2400 A VGE = ±15V, Tj = 25 °C (Note 5) Unit 6.0 IGES Output capacitance Max — VGE(th) Coes Typ — VCE = VCES, VGE = 0V Cies Min Tj = 25 °C Collector cutoff current Eon(10%) Limits Conditions (Note 4) mA — 352 — — 19.2 — nF — 5.6 — nF — 24.5 — µC Tj = 25 °C — 2.15 2.80 Tj = 125 °C — 2.40 — VCC = 850 V, IC = 2400 A — — 1.50 µs VGE = ±15 V, RG(on) = 0.7 Ω — — 0.70 µs — 0.64 — J/P IC = 2400 A VGE = 15 V Tj = 125 °C, Ls = 100 nH Inductive load V td(off) Turn-off delay time VCC = 850 V, IC = 2400 A — — 3.00 µs tf Turn-off fall time VGE = ±15 V, RG(off) = 1.6 Ω — — 0.60 µs Eoff(10%) Turn-off switching energy (Note 5) — 0.84 — J/P VEC Emitter-collector voltage (Note 2) trr Reverse recovery time Qrr Reverse recovery charge Erec (10%) Reverse recovery energy Tj = 125 °C, Ls = 100 nH Inductive load IE = 2400 A (Note 4) VGE = 0 V (Note 2) (Note 2) (Note 2),(Note 5) Tj = 25 °C — 2.60 3.30 Tj = 125 °C — 2.30 — V VCC = 850 V, IE = 2400 A — — 1.50 µs VGE = ±15 V, RG(on) = 0.7 Ω — 620 — µC — 0.38 — J/P Tj = 125 °C, Ls = 100 nH Inductive load HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 2 of 7 CONFIDENTIAL MITSUBISHI HVIGBT MODULES CM2400HC-34N th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Item Thermal resistance Conditions Junction to Case, IGBT part Limits Min Typ Max — — 9.5 Unit K/kW Rth(j-c)R Thermal resistance Junction to Case, FWDi part — — 21.0 K/kW Rth(c-f) Contact thermal resistance Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm — 8.0 — K/kW MECHANICAL CHARACTERISTICS Symbol Item Mt Ms Conditions M8: Main terminals screw Mounting torque Mt Limits Min Typ Max 7.0 — 20.0 Unit N·m M6: Mounting screw 3.0 — 6.0 N·m M4: Auxiliary terminals screw 1.0 — 3.0 N·m — 0.8 — kg m Mass CTI Comparative tracking index 600 — — — da Clearance 19.5 — — mm dS Creepage distance 32.0 — — mm LP CE Parasitic stray inductance — 16 — nH RCC’+EE’ Internal lead resistance — 0.14 — mΩ Note 1. Note 2. Note 3. Note 4. Note 5. Tc = 25 °C Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 3 of 7 CONFIDENTIAL MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 5000 5000 Tj = 125°C VCE = 20V VGE = 20V 4000 4000 Collector Current [A] Collector Current [A] VGE = 15V VGE = 12V 3000 VGE = 10V 2000 1000 Tj = 125°C 3000 Tj = 25°C 2000 1000 VGE = 8V 0 0 0 1 2 3 4 5 6 0 Collector - Emitter Voltage [V] 5 10 15 Gate - Emitter Voltage [V] COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5000 5000 VGE = 15V 4000 Tj = 25°C Emitter Current [A] Collector Current [A] 4000 Tj = 125°C 3000 2000 1000 Tj = 125°C Tj = 25°C 3000 2000 1000 0 0 0 1 2 3 4 Collector-Emitter Saturation Voltage [V] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 0 1 2 3 4 Emitter-Collector Voltage [V] HVM-1035-C 4 of 7 CONFIDENTIAL MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 10000 VCE = 850V, IC = 2400A Tj = 25°C 15 Gate-Emitter Voltage [V] 1000 Capacitance [nF] Cies 100 Coes 10 10 5 0 -5 -10 VGE = 0V, Tj = 25°C f = 100kHz Cres 1 -15 0.1 1 10 0 100 10 Collector-Emitter Voltage [V] 30 40 Gate Charge [µC] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3 5 VCC = 850V, VGE = ±15V RG(on) = 0.7 Ω, RG(off) = 1.6 Ω Tj = 125°C, Inductive load 2.5 VCC = 850V, IC = 2400A VGE = ±15V, Tj = 125°C Inductive load Eoff 4 Switching Energies [J/P] Switching Energies [J/P] 20 2 1.5 Eon 1 Erec 0.5 Eon 3 Eoff 2 1 Erec 0 0 0 1000 2000 3000 4000 5000 Collector Current [A] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 0 2 4 6 8 10 12 Gate Resistance [Ω] HVM-1035-C 5 of 7 CONFIDENTIAL MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES PERFORMANCE CURVES HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10 100 td(on) 1 tf 0.1 tr 0.01 100 Irr 10 1000 trr 1 100 0 1000 10000 Collector Current [A] 100 Reverse Recovery Current [A] Reverse Recovery Time [µs] Switching Times [µs] td(off) 10000 VCC = 850V, VGE = ±15V RG(on) = 0.7 Ω Tj = 125°C, Inductive load VCC = 850V, VGE = ±15V RG(on) = 0.7 Ω, RG(off) = 1.6 Ω Tj = 125°C, Inductive load 10 10000 1000 Emitter Current [A] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 Rth(j-c)Q = 9.5 K/kW Rth(j-c)R = 21.0 K/kW 1 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 Time [s] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 6 of 7 CONFIDENTIAL MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 6000 25000 VCC ≤ 1200V, VGE = ±15V Tj = 125°C, RG(off) ≥ 1.6 Ω VCC ≤ 1200V, VGE = ±15V RG(on) ≥ 0.7Ω, RG(off) ≥ 1.6Ω Tj = 125°C, tpsc ≤ 10µs 20000 Collector Current [A] Collector Current [A] 5000 4000 3000 2000 15000 10000 5000 1000 0 0 0 500 1000 1500 2000 Collector-Emitter Voltage [V] 0 500 1000 1500 2000 Collector-Emitter Voltage [V] FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 3000 Reverse Recovery Current [A] VCC ≤ 1200V, di/dt ≤ 4700A/µs Tj = 125°C 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 Collector-Emitter Voltage [V] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 7 of 7