CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three (3) Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface mount package, designed for applications requiring high speed switching applications. MARKING CODE: K48 SOT-363 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF UNITS 75 V 100 V 250 mA IFRM IFSM 500 mA 4.0 A IFSM PD 1.0 A 325 mW -65 to +150 °C 385 °C/W TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR 25 UNITS BVR VR=20V IR=5.0μA nA 75 BVR IR=100μA 100 VF IF=100mA 1.0 V CT VR=0, f=1.0MHz 4.0 pF trr IR=IF=10mA, RL=100Ω Rec. to 1.0mA 4.0 ns V V R5 (13-January 2010) CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-363 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: K48 R5 (13-January 2010) w w w. c e n t r a l s e m i . c o m