UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES * RDS(ON) = 0.29Ω @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12P10L-TM3-T 12P10G-TM3-T 12P10L-TN3-R 12P10G-TN3-R 12P10L-TQ2-R 12P10G-TQ2-R 12P10L-TQ2-T 12P10G-TQ2-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-251 TO-252 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tape Reel Tape Reel Tube 1 of 6 QW-R502-262.B 12P10 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Tc=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID -9.4 A Pulsed Drain Current (Note 2) IDM -37.6 A Avalanche Current (Note 2) IAR -9.4 A Single Pulsed Avalanche Energy (Note 3) EAS 370 mJ Repetitive Avalanche Energy (Note 2) EAR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt -6.0 V/ns TO-251/ TO-252 50 Power Dissipation PD W TO-263 65 ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C 4. ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER TO-251/ TO-252 Junction to Ambient TO-263 TO-251/ TO-252 Junction to Case TO-263 SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 110 62.5 2.5 2.31 UNIT ℃/W ℃/W 2 of 6 QW-R502-262.B 12P10 Power MOSFET ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-Resistance RDS(ON) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG TEST CONDITIONS VGS=0 V, ID=-250µA ID=-250µA,Referenced to 25°C VDS=-100V, VGS=0V VDS=0V, VGS=±30V -100 V -0.1 V/°C -1 µA ±100 nA VDS=VGS, ID=-250µA VGS=-10V, ID=-4.7A VDS =-40V, ID=-4.7A (Note 1) -2.0 -4.0 0.24 0.29 6.3 V Ω S 620 220 65 800 290 85 pF pF pF 21 27 4.6 11.5 15 40 160 330 35 80 60 130 nC nC ns ns ns ns -4.0 -9.4 V A -37.6 A VDS=-25V, VGS=0V, f=1.0MHz VDS=-80V, ID=-11.5A, Gate Source Charge QGS VGS=-10V(Note 1, 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=-50V, ID=-11.5A, RG=25Ω(Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=-9.4A Maximum Body-Diode Continuous Current IS Maximum Pulsed Drain-Source Diode ISM Forward Current Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% Note: 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT nC 3 of 6 QW-R502-262.B 12P10 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Compliment of D.U.T. (N-Channel) VDD * dv/dt controlled by RG * ISD controlled by pulse period VGS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM di/dt Body Diode Reverse Current VDS (D.U.T.) VDD Body Diode Recovery dv/dt Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-262.B 12P10 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms VGS Same Type as D.U.T. 50kΩ 12V 0.2μF QG -10V 0.3μF VDS QGS QGD VGS DUT -3mA Charge Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-262.B 12P10 Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-262.B