CENTRAL CMLT5551

Central
CMLT5551
SURFACE MOUNT
PICOminiTM
DUAL NPN SMALL SIGNAL
SILICON SWITCHING TRANSISTORS
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT5551
consists of two individual, isolated NPN silicon
transistors, manufactured by the epitaxial planar
process and epoxy molded in an SOT-563
surface mount package. This PICOmini™
devices has been designed for small signal
general purpose and switching applications.
MARKING CODE: 5C5
SOT-563 CASE
O
MAXIMUM RATINGS: (TA=25 C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
VCBO
VCEO
VEBO
IC
PD
180
160
6.0
600
350
TJ,Tstg
ΘJA
-65 to +150
357
V
V
V
mA
mW
O
C
C/W
O
O
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25 C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
ICBO
VCB=120V
BVCBO
IC=100µA
IC=1.0mA
180
160
V
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
6.0
V
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
hfe
NF
VCB=120V, TA=100°C
IC=10mA,
IC=50mA,
IB=1.0mA
IB=5.0mA
50
nA
50
µA
V
0.15
V
0.20
V
1.00
V
1.00
V
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
80
VCE=5.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
30
100
300
MHz
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
6.0
pF
50
200
VCE=5.0V, IC=200µA, RS=10Ω
f=10Hz to 15.7kHz
80
250
8.0
dB
R0 (15-October 2004)
Central
TM
CMLT5551
SURFACE MOUNT
PICOminiTM
DUAL NPN SMALL SIGNAL
SILICON SWITCHING TRANSISTORS
Semiconductor Corp.
SOT-563 CASE - MECHANICAL OUTLINE
D
E
A
6
E
5
4
B
G
1
C
F
3
2
H
R0
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
MARKING CODE: 5C5
R0 (15-October 2004)