CNY17 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES • Isolation test voltage: 5000 VRMS • Long term stability • Industry standard dual-in-line package A 1 6 B C 2 5 C NC 3 4 E • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS • Underwriters lab file no. E52744 • cUL tested to CSA 22.2 bulletin 5A • DIN EN 60747-5-5 (VDE 0884-5) i179004-14 • BSI IEC 60950, IEC 60065 DESCRIPTION • FIMKO The CNY17 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransitor. • CQC Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. ORDERING INFORMATION C N Y 1 7 - # PART NUMBER CTR BIN X 0 # # PACKAGE OPTION AGENCY CERTIFIED/PACKAGE DIP-6 Option 6 7.62 mm 10.16 mm Option 7 Option 9 > 8 mm 8 mm typ. T TAPE AND REEL CTR (%) UL, cUL, BSI, FIMKO 40 to 80 63 to 125 100 to 200 DIP-6 CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1X006 CNY17-2X006 CNY17-3X006 CNY17-4X006 SMD-6, option 7 CNY17-1X007T (1) CNY17-2X007T (1) CNY17-3X007T (1) CNY17-4X007T (1) SMD-6, option 9 CNY17-1X009T (1) CNY17-2X009T (1) CNY17-3X009T (1) CNY17-4X009T (1) DIP-6, 400 mil, option 6 VDE, UL, CUL, BSI, FIMKO DIP-6 160 to 320 40 to 80 63 to 125 100 to 200 160 to 320 CNY17-1X001 CNY17-2X001 CNY17-3X001 CNY17-4X001 DIP-6, 400 mil, option 6 CNY17-1X016 CNY17-2X016 CNY17-3X016 CNY17-4X016 SMD-64, option 7 CNY17-1X017 CNY17-2X017T (1) CNY17-3X017T (1) CNY17-4X017T (1) SMD-6, option 9 - CNY17-2X019T (1) - - Note (1) Also available in tubes, do not put T on the end. Document Number: 83606 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 25-Oct-12 CNY17 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION INPUT Reverse voltage Forward current Forward surge current LED power dissipation OUTPUT Collector emitter breakdown voltage Emitter base breakdown voltage tp ≤ 10 μs at 25 °C Collector current tp/T = 0.5, tp ≤ 10 ms Power dissipation COUPLER Isolation test voltage between emitter and detector Creepage distance Clearance distance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance t=1s SYMBOL VALUE UNIT VR IF IFSM Pdiss 6 60 2.5 70 V mA A mW BVCEO BVEBO IC IC Pdiss 70 7 50 100 150 V V mA mA mW VISO 5000 ≥7 ≥7 ≥ 0.4 VRMS mm mm mm ≥ 175 VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C Storage temperature Operating temperature Soldering temperature (1) 2 mm from case, ≤ 10 s Total power dissipation RIO RIO Tstg Tamb Tsld ≥ 1012 ≥ 1011 - 55 to + 150 - 55 to + 110 260 Ω Ω °C °C °C Pdiss 220 mW Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Forward voltage Breakdown voltage Reverse current Capacitance Thermal resistance OUTPUT Collector emitter capacitance Collector base capacitance Emitter base capacitance Thermal resistance COUPLER Collector emitter, saturation voltage Coupling capacitance Collector emitter, leakage current TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 1.39 1.65 0.01 25 750 10 V V μA pF K/W IF = 60 mA IR = 10 μA VR = 6 V VR = 0 V, f = 1 MHz VF VBR IR CO Rth VCE = 5 V, f = 1 MHz VCE = 5 V, f = 1 MHz VCE = 5 V, f = 1 MHz CCE CCB CEB Rth 5.2 6.5 7.5 500 VF = 10 mA, IC = 2.5 mA VCEsat CC ICEO ICEO ICEO ICEO 0.25 0.6 2 2 5 5 VCE = 10 V CNY17-1 CNY17-2 CNY17-3 CNY17-4 6 pF pF pF K/W 0.4 50 50 100 100 V pF nA nA nA nA Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Document Number: 83606 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 25-Oct-12 CNY17 www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION VCE = 5 V, IF = 10 mA IC/IF VCE = 5 V, IF = 1 mA PART CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 SYMBOL CTR CTR CTR CTR CTR CTR CTR CTR MIN. 40 63 100 160 13 22 34 56 TYP. MAX. 80 125 200 320 UNIT % % % % % % % % MAX. UNIT 30 45 70 90 SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION LINEAR OPERATION (without saturation) Turn-on time IF = 10 mA, VCC = 5 V, RL = 75 Ω Rise time IF = 10 mA, VCC = 5 V, RL = 75 Ω Turn-off time IF = 10 mA, VCC = 5 V, RL = 75 Ω Fall time IF = 10 mA, VCC = 5 V, RL = 75 Ω Cut-off frequency IF = 10 mA, VCC = 5 V, RL = 75 Ω SWITCHING OPERATION (with saturation) IF = 20 mA Turn-on time IF = 10 mA IF = 5 mA IF = 20 mA IF = 10 mA Rise time IF = 5 mA IF = 20 mA IF = 10 mA Turn-off time IF = 5 mA IF = 20 mA IF = 10 mA Fall time IF = 5 mA +5V IF IF PART CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 SYMBOL MIN. TYP. ton tr toff tf fCO 3 2 2.3 2 110 μs μs μs μs kHz ton ton ton ton tr tr tr tr toff toff toff toff tf tf tf tf 3 4.2 4.2 6 2 3 3 4.6 18 23 23 25 11 14 14 15 μs μs μs μs μs μs μs μs μs μs μs μs μs μs μs μs IF 0 0 tp IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L = 1 MΩ C L = 20 pF 10 % 0 tr RL td t on 95 10804-3 Fig. 1 - Test Circuit, Non-Saturated Operation IF t 100 % 90 % +5V I F = 10 mA 0 IC tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time ts tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 3 - Switching Times R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 2 - Test Circuit, Saturated Operation Document Number: 83606 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 25-Oct-12 CNY17 www.vishay.com Vishay Semiconductors 1.8 1.7 Tamb = 0 °C 1.6 Tamb = - 25 °C 1.5 1.4 Tamb = - 40 °C 1.3 T = - 55 °C amb 1.2 1.1 Tamb = 25 °C 1.0 Tamb = 50 °C 0.9 Tamb = 75 °C 0.8 0.7 Tamb = 100 °C 0.6 0.1 1 10 100 10 000 IF = 0 mA ICE0 - Leakage Current (nA) VF - Forward Voltage (V) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 VCE = 40 V 100 1 VCE = 12 V 0.1 0.01 0.001 - 60 - 40 - 20 0 20 40 60 80 100 IF - Forward Current (mA) Tamb - Ambient Temperature (°C) Fig. 4 - Forward Voltage vs. Forward Current Fig. 7 - Leakage Current vs. Ambient Temperature 60 1.2 CTRNorm - Normalized CTR (NS) IC - Collector Current (mA) VCE = 24 V 10 IF = 30 mA 50 40 IF = 20 mA 30 IF = 15 mA 20 IF = 10 mA 10 IF = 5 mA 0 0 1 2 3 4 5 7 6 0.8 IF = 5 mA 0.6 0.4 IF = 1 mA 0.2 0 - 60 - 40 - 20 8 VCE = 5 V IF = 10 mA 1.0 0 20 40 60 80 100 VCE - Collector Emitter Voltage (NS) (V) Tamb - Ambient Temperature (°C) Fig. 5 - Collector Current vs. Collector Emitter Voltage (NS) Fig. 8 - Normalized CTR (NS) vs. Ambient Temperature 25 IC - Collector Current (mA) 20 15 IF = 10 mA 10 IF = 5 mA 5 IF = 1 mA IF = 2 mA 0 0.1 0 0.2 0.3 0.4 CTRNorm - Normalized CTR (sat) 1.2 IF = 25 mA VCE = 0.4 V IF = 10 mA 1.0 0.8 IF = 5 mA 0.6 IF = 1 mA 0.4 0.2 0 - 60 - 40 - 20 0 20 40 60 80 100 VCE - Collector Emitter Voltage (sat) (V) Tamb - Ambient Temperature (°C) Fig. 6 - Collector Current vs. Collector Emitter Voltage (sat) Fig. 9 - Normalized CTR (sat) vs. Ambient Temperature Document Number: 83606 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 25-Oct-12 CNY17 www.vishay.com Vishay Semiconductors 1000 VCE = 5 V VCC = 5 V fCTR - CTR Frequency (kHz) CTRNorm - Normalized CTR (NS) 1.2 Tamb = 25 °C 1.0 Tamb = 0 °C 0.8 Tamb = - 40 °C Tamb = - 55 °C 0.6 Tamb = 50 °C 0.4 Tamb = 75 °C 0.2 100 10 Tamb = 100 °C 0 0.1 1 1 0.1 100 10 1 10 100 IF - Forward Current (mA) IC - Collector Current (mA) Fig. 10 - Normalized CTR (NS) vs. Forward Current Fig. 13 - CTR Frequency vs. Collector Current 1000 VCE = 5 V, IF = 10 mA VCE = 0.4 V ton, toff - Switching Time (μs) CTRNorm - Normalized CTR (sat) 1.2 Tamb = 25 °C 1.0 Tamb = 0 °C Tamb = - 40 °C 0.8 Tamb = - 55 °C 0.6 0.4 Tamb = 50 °C Tamb = 75 °C 0.2 toff 100 10 ton 1 Tamb = 100 °C 0 0.1 1 100 10 0.1 0.1 1 10 100 IF - Forward Current (mA) RL - Load Resistance (kΩ) Fig. 11 - Normalized CTR (sat) vs. Forward Current Fig. 14 - Switching Time vs. Load Resistance 0 VCE = 5 V - 20 Phase (deg) - 40 - 60 - 80 - 100 - 120 - 140 - 160 1 10 100 1000 f - Frequency (kHz) Fig. 12 - CTR Frequency vs. Phase Angle Document Number: 83606 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 25-Oct-12 CNY17 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 6 5 4 6.5 ± 0.5 1 2 3 7.3 ± 0.5 7.62 ± 0.3 1.1 ± 0.1 3.5 ± 0.3 0.5 typ. 3.3 ± 0.5 2.8 ± 0.5 0.26 0.5 ± 0.1 2.54 ± 0.25 7.62 to 9.98 22530 Option 6 Option 7 7.62 typ. 7.62 typ. 3.5 ± 0.3 7.62 typ. 3.5 ± 0.3 0.35 ± 0.25 0.1 min. Option 9 0.6 min. 8 min. 2.7 min. 10.16 typ. 0.1 ± 0.1 0.6 min. 3.5 ± 0.3 8.16 ± 0.8 10.16 ± 0.3 10.3 max. 0.76 2.54 R 0.25 0.76 2.54 R 0.25 1.78 8 min. 11.05 20802-34 1.52 1.78 8 min. 11.05 1.52 PACKAGE MARKING CNY17-3 Pin 1 I.D. V YWW 25 Notes • VDE logo is only marked on option 1 parts. Option information is not marked on the part. • Tape and reel suffix (T) is not part of the package marking. Document Number: 83606 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 25-Oct-12 CNY17 www.vishay.com Vishay Semiconductors TUBE AND TAPE INFORMATION DEVICES PER TUBE TYPE UNITS/TUBE TUBES/BOX UNITS/BOX DIP-6 50 40 2000 Ø 1.55 ± 0.05 2 ± 0.1 4 ± 0.1 1.75 ± 0.1 7.5 ± 0.1 16 ± 0.3 12 ± 0.1 0.3 ± 0.05 22537-1 Fig. 15 - Tape and Reel Drawing, 1000 Units per Reel Document Number: 83606 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 25-Oct-12 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000