RENESAS CR3PM-12G

Preliminary Datasheet
CR3PM-12G
R07DS0655EJ0100
Rev.1.00
Jan 30, 2012
Thyristor
Low Power Use
Features




 Insulated Type
 Planar Type
 UL Recognized : File No. E223904
IT (AV) : 3 A
VDRM : 600 V
IGT: 100 A
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F)
2
3
1
1. Cathode
2. Anode
3. Gate
12
3
Applications
TV sets, control of household equipment such as electric blanket, and other general purpose control applications
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Non-repetitive peak reverse voltage
VRSM
DC reverse voltage
VR(DC)
Repetitive peak off-state voltage Note1
VDRM
DC off-state voltage Note1
VD(DC)
Notes: 1. With gate to cathode resistance RGK = 220 
R07DS0655EJ0100 Rev.1.00
Jan 30, 2012
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
Page 1 of 6
CR3PM-12G
Parameter
RMS on-state current
Average on-state current
Surge on-state current
Preliminary
Symbol
Ratings
Unit
IT(RMS)
IT(AV)
4.7
3.0
A
A
ITSM
70
A
I2 t
24.5
A2s
PGM
PG(AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
0.5
0.1
6
6
0.3
– 40 to +125
– 40 to +125
2.0
W
W
V
V
A
C
C
g
Viso
2000
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine half wave
180 conduction, Tc = 103C
60Hz sine half wave, 1full cycle,
peak value, non-repetitive
Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
each terminal to case
Electrical Characteristics
Parameter
Repetitive peak reverse current
Symbol
IRRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
Repetitive peak off-state current
IDRM
—
—
2.0
mA
On-state voltage
VTM
—
—
1.6
V
Gate trigger voltage
Gate non-trigger voltage
VGT
VGD
—
0.1
—
—
0.8
—
V
V
IGT
Rth(j-c)
1
—
—
—
100
4.1
A
C/W
Gate trigger current
Thermal resistance
Test conditions
Tj = 125C, VRRM applied
RGK = 220 
Tj = 125C, VDRM applied
RGK = 220 
Tj = 25C, ITM = 10 A
instantaneous value
Tj = 25C, VD = 6 V, IT = 0.1 A
Tj = 125C, VD = 1/2 VDRM
RGK = 220 
Tj = 25C, VD = 6 V, IT = 0.1 A
Junction to case Note2
Notes: 2. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
R07DS0655EJ0100 Rev.1.00
Jan 30, 2012
Page 2 of 6
CR3PM-12G
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
100
Surge On-State Current (A)
101
100
10−1
0
1
2
3
PGM = 0.5W
PG(AV) = 0.1W
IGT = 100μA
(Tj = 25°C)
IFGM = 0.3A
VGD = 0.1V
10−1
100
101
102
103
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
101
102
Gate Trigger Current vs.
Junction Temperature
10−1
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
20
Gate Characteristics
VGT = 0.8V
103
Typical Example
102
101
100
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
101
100
–40
40
Conduction Time (Cycles at 60Hz)
VFGM = 6V
100
60
On-State Voltage (V)
102
101
80
0
100
4
0
40
80
120
Junction Temperature (°C)
R07DS0655EJ0100 Rev.1.00
Jan 30, 2012
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
Tc = 25°C
100
102
101
102
10−2
10−1
101
100
10−1
10−3
100
Time (s)
Page 3 of 6
CR3PM-12G
Preliminary
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
160
7
Case Temperature (°C)
Average Power Dissipation (W)
8
180°
6
120°
90°
5
θ = 30°
60°
4
3
θ
2
360°
1
0
1
2
3
4
80
θ = 30°
60
90°
60°
180°
120°
40
0
1
2
3
4
5
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
120
Average Power Dissipation (W)
8
Resistive,
inductive loads
Natural convection
140
θ
360°
θ = 180°
120°
90°
60°
30°
100
80
60
40
20
0
7
120°
90°
5
θ = 30°
4
60°
3
2
θ
1
360°
θ
Resistive loads
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
180°
6
1
0
2
3
4
5
Average On-State Current (A)
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
160
140
140
120
100
80
θ = 30° 60° 90° 120° 180°
60
40
Resistive,
inductive loads
100
Average On-State Current (A)
Ambient Temperature (°C)
Ambient Temperature (°C)
Case Temperature (°C)
120
0
5
160
0
θ
360°
20
Resistive,
inductive loads
0
140
θ
θ
360°
20 Resistive
loads
0
0
1
2
3
4
Average On-State Current (A)
R07DS0655EJ0100 Rev.1.00
Jan 30, 2012
5
120
θ = 180°
120°
90°
60°
30°
100
80
60
40
θ
θ
360°
20 Resistive loads
Natural convection
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
Page 4 of 6
Preliminary
Typical Example
RGK=220Ω
140
120
100
80
60
40
20
0
−40
0
40
80
120
160
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Junction Temperature (°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
105
Typical Example
RGK=220Ω
104
103
102
–40
103
0
40
80
120
160
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
−40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
140
Tj = 125°C
RGK=220Ω
120
100
80
60
40
20
0
101
102
103
104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Holding Current vs.
Junction Temperature
Gate Trigger Current vs.
Gate Current Pulse Width
Typical Example
VD=12V
RGK=220Ω
102
101
100
−40
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
160
0
40
80
120
Junction Temperature (°C)
R07DS0655EJ0100 Rev.1.00
Jan 30, 2012
160
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Breakover Voltage vs.
Junction Temperature
Repetitive Peak Reverse Voltage (Tj = t°C)
× 100 (%)
Repetitive Peak Reverse Voltage (Tj = 25°C)
CR3PM-12G
105
VD=6V
RL=60Ω
Ta=25°C
Typical Example
104
103
102
101
100
101
102
103
Gate Current Pulse Width (μs)
Page 5 of 6
CR3PM-12G
Preliminary
Package dimensions
Package Name
TO-220F
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AA-A
Previous Code
⎯
MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2±0.2
13.5Min
3.6
1.3Max
0.8
2.54
0.5
2.6
4.5
2.54
Ordering Information
Orderable Part Number
CR3PM-12G#B00
CR3PM-12G-A8#B00
Packing
Bag
Tube
Quantity
100 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Note : Please confirm the specification about the shipping in detail.
R07DS0655EJ0100 Rev.1.00
Jan 30, 2012
Page 6 of 6
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Colophon 1.1