Preliminary Datasheet CR6CM-12B R07DS0230EJ0300 Rev.3.00 Jul 30, 2013 600V - 6A - Thyristor Medium Power Use Features • IT (AV) : 6 A • VDRM : 600 V • IGT : 10 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) RENESAS Package code: PRSS0004AA-A A (Package name: TO-220) 4 4 2, 4 3 1 2 12 3 1 1. 2. 3. 4. Cathode Anode Gate Anode 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage R07DS0230EJ0300 Rev.3.00 Jul 30, 2013 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Page 1 of 8 CR6CM-12B Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Preliminary Symbol IT (RMS) IT (AV) Ratings 9.4 6 Unit A A ITSM 90 A I2t 41 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 5 0.5 6 10 2 – 40 to +150 – 40 to +150 2.1 W W V V A °C °C g Conditions Commercial frequency, sine half wave Note1 180° conduction, Tc = 121°C 50Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — Typ. — Max. 2.0/5.0 Unit mA Test conditions Tj = 125°C/150°C, VRRM applied Repetitive peak off-state current On-state voltage IDRM VTM — — — — 2.0/5.0 1.7 mA V Tj = 125°C/150°C, VDRM applied Gate trigger voltage VGT — — 1.0 V VGD 0.2/0.1 — — V IGT IH Rth (j-c) — — — — 15 — 10 — 2.5 mA mA °C/W Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Tc = 25°C, ITM = 20 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A Tj = 125°C/150°C, VD = 1/2 VDRM Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1 Note2 Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case. 2. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. R07DS0230EJ0300 Rev.3.00 Jul 30, 2013 Page 2 of 8 CR6CM-12B Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 103 100 Surge On-State Current (A) 102 101 1 2 3 4 VFGM = 6V Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 102 101 Gate Trigger Current vs. Junction Temperature PGM = 5W PG(AV) = 0.5W IGT = 10mA VGD = 0.1V 101 IFGM = 2A 102 103 103 Typical Example 102 101 100 –40 0 40 80 160 120 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 –40 20 Gate Characteristics 100 101 40 Conduction Time (Cycles at 50Hz) VGT = 1V 10-1 60 On-State Voltage (V) 102 101 80 0 100 5 × 100 (%) 100 0 0 40 80 120 Junction Temperature (°C) R07DS0230EJ0300 Rev.3.00 Jul 30, 2013 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tc = 125°C 102 101 100 10–1 –3 10 10–2 10–1 100 101 Time (s) Page 3 of 8 CR6CM-12B Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) 16 160 14 140 θ 120 360° Case Temperature (°C) Average Power Dissipation (W) Maximum Average Power Dissipation (Single-Phase Half Wave) 180° 12 10 120° 90° 60° θ = 30° 8 6 θ 4 360° 2 0 0 4 6 8 90° 40 60° θ = 30° 0 2 4 6 8 12 10 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 14 12 180° 120° θ = 30° 10 90° 60° 8 6 4 θ 2 360° θ Case Temperature (°C) Average Power Dissipation (W) 120° Average On-State Current (A) 16 140 θ 120 360° 100 Resistive loads 2 4 6 10 8 60 180° 120° 40 90° 20 0 12 θ 80 Resistive loads 0 0 0 θ = 30° 2 4 60° 6 8 10 12 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 16 160 140 14 DC 270° 180° 120° 90° 12 60° 10 θ = 30° 8 6 θ 4 360° 2 0 Resistive, inductive loads 0 2 4 6 8 10 Average On-State Current (A) R07DS0230EJ0300 Rev.3.00 Jul 30, 2013 12 Case Temperature (°C) Average Power Dissipation (W) 180° 60 0 12 10 80 20 Resistive, inductive loads 2 Resistive, inductive loads 100 120 100 Resistive, inductive loads 80 60 θ 360° 40 180° 270° 60° DC 90° 120° θ = 30° 20 0 0 2 4 6 8 10 12 Average On-State Current (A) Page 4 of 8 Preliminary 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 125°C 140 120 100 80 60 40 20 0 1 10 102 103 104 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 150°C 140 120 100 80 60 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Holding Current vs. Junction Temperature Turn-Off Time vs. Junction Temperature 103 80 Typical Example 70 Turn-Off Time (μs) Breakover Voltage (dv/dt = vV/μs) Holding Current (Tj = t°C) Holding Current (Tj = 25°C) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) × 100 (%) Junction Temperature (°C) × 100 (%) Typical Example Breakover Voltage (dv/dt = vV/μs) 160 Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) CR6CM-12B 102 Typical Example 60 50 40 30 Distribution 20 IT = 6A, –di/dt = 5A/μs, VD = 300V, dv/dt = 20V/μs VR = 50V 10 101 –40 0 40 80 120 Junction Temperature (°C) R07DS0230EJ0300 Rev.3.00 Jul 30, 2013 160 0 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Page 5 of 8 CR6CM-12B Preliminary Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 -1 10 100 101 102 Gate Current Pulse Width (μs) R07DS0230EJ0300 Rev.3.00 Jul 30, 2013 Page 6 of 8 CR6CM-12B Preliminary Package Dimensions JEITA Package Code SC-46 RENESAS Code PRSS0004AG-A Previous Code TO-220ABS MASS[Typ.] 2.1g Unit: mm 4.5 ± 0.2 2.8 ± 0.1 Package Name TO-220AB 9.9 ± 0.2 + 0.10 φ3.6 ± 0.2 13.08 ± 0.20 (3.00) 9.2 ± 0.2 15.7 ± 0.2 1.30 – 0.05 1.62 Max 0.80 ± 0.10 2.6 Max 2.54 2.54 + 0.10 0.50 – 0.05 10.0 ± 0.2 Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code ⎯ MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 φ3.6 3.8Max 12.5Min 16Max 7.0 3.2 1.3 1.0 0.8 0.5 2.54 2.6 4.5Max 2.54 2 R07DS0230EJ0300 Rev.3.00 Jul 30, 2013 Page 7 of 8 CR6CM-12B Preliminary Ordering Information Orderable Part Number CR6CM-12B#BB0 CR6CM-12B-A8#BB0 Note: Packing Tube Tube Quantity 50 pcs. 50 pcs. 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