CWDM3011N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM3011N is a high current silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE: C3011N SOIC-8 CASE APPLICATIONS: • Load/Power switches • DC-DC converter circuits • Power management FEATURES: • Low rDS(ON) • High current • Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS VGS 30 UNITS V 20 V Continuous Drain Current (Steady State) ID 11 A Maximum Pulsed Drain Current, tp=10μs IDM PD 50 A 2.5 W Gate-Source Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg ΘJA -55 to +150 °C 50 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS(th) VSD rDS(ON) rDS(ON) Crss Ciss Coss Qg(tot) Qgs Qgd ton toff VGS=0, ID=250μA VGS=VDS, ID=250μA MAX 100 UNITS nA 1.0 μA 3.0 V 1.2 V 14 20 mΩ 18 30 mΩ 30 1.0 VGS=0, IS=2.6A VGS=10V, ID=11A VGS=4.5V, ID=9.0A VDS=15V, VGS=0, f=1.0MHz VDS=15V, VGS=0, f=1.0MHz VDS=15V, VGS=0, f=1.0MHz VDD=15V, VGS=5.0V, ID=10A V 1.8 100 pF 860 pF 120 pF 6.3 nC ID=10A 2.0 nC ID=10A 2.3 nC VDD=15V, VGS=10V, ID=10A RG=0.3Ω 20 ns 43 ns VDD=15V, VGS=5.0V, VDD=15V, VGS=5.0V, R1 (13-August 2013) CWDM3011N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET SOIC-8 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source 5) 2) Source 6) 3) Source 7) 4) Gate 8) SUGGESTED MOUNTING PADS (Dimensions in mm) Drain Drain Drain Drain MARKING CODE: C3011N R1 (13-August 2013) w w w. c e n t r a l s e m i . c o m CWDM3011N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R1 (13-August 2013) w w w. c e n t r a l s e m i . c o m