SONY CXL5506M

CXL5506M/P
CMOS-CCD 1H Delay Line for PAL
Description
The CXL5506M/P are CMOS-CCD delay line ICs
that provide 1H delay time for PAL signals including
the external low-pass filter.
CXL5506M
8 pin SOP (Plastic)
CXL5506P
8 pin DIP (Plastic)
Features
• Single 5V power supply
• Low power consumption 95mW (Typ.)
• Built-in peripheral circuits
Functions
• 1130-bit CCD register
• Clock driver
• Auto-bias circuit
• Input clamp circuit
• Sample-and-hold circuit
Absolute Maximum Ratings (Ta = 25°C)
• Supply voltage
VDD
6
V
• Operating temperature Topr
–10 to +60
°C
• Storage temperature Tstg
–55 to +150 °C
• Allowable power dissipation
PD
CXL5506M
350
mW
CXL5506P
480
mW
Structure
CMOS-CCD
Recommended Operating Condition (Ta = 25°C)
Supply voltage
VDD
5 ± 5%
V
Recommended Clock Conditions (Ta = 25°C)
• Input clock amplitude VCLK
0.3 to 1.0
Vp-p
(0.5Vp-p typ.)
• Clock frequency
fCLK
17.734475
MHz
• Input clock waveform Sine wave
Input Signal Amplitude
VSIG 575mVp-p (Max.) (at internal clamp condition)
AB
VDD
VG1
CLK
Blook Diagram and Pin Configuration (Top View)
8
7
6
5
Auto-bias circuit
Timing circuit
Bias circuit
Clock driver
CCD
(1130bit)
Bias circuit (A)
Output circuit
Bias circuit (B)
(S/H 1bit)
VG2
3
4
VSS
2
OUT
1
IN
Clamp circuit
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E90632B7X-PS
CXL5506M/P
Pin Description
Pin No.
Symbol
Description
I/O
Impedance
> 10kΩ at no clamp
1
IN
I
Signal input
2∗
VG2
I
Gate bias 2 DC input
3
OUT
O
Signal output
4
VSS
—
GND
5
CLK
I
Clock input
6
VG1
O
Gate bias 1 DC output
7
VDD
—
Power supply (5V)
8
AB
O
Auto-bias DC output
40 to 500Ω
> 10kΩ
600 to 200kΩ
∗ Description of Pin 2 (VG2)
Control of input signal clamp condition
0V ........ Sync tip clamp condition
5V ........ Center bias condition
Center biased to approx. 2.1V by means of the IC internal resistance (approx. 10kΩ).
In this mode, the input signal is limited to APL 50% and the maximum input signal amplitude is
200mVp-p.
Input waveform
Clamp
level
–2–
Output waveform
CXL5506M/P
Electrical Characteristics
(Ta = 25°C, VDD = 5V, fCLK = 17.734475MHz, VCLK = 500mVp-p, sine wave)
See "Electrical Characteristics Test Circuit"
Item
Symbol
Test condition
SW condition
Max.
Unit
Note
—
10
19
28
mA
1
a
b
–2
0
2
dB
2
b
b
–2
–1
0
dB
3
a
a
a
Low frequency gain
GL
200kHz,
500mVp-p,
sine wave
fR
200kHz ←
→ 4.43MHz,
150mVp-p,
sine wave
←→
3
IDD
Frequency response
Typ.
2
Supply current
—
Min.
1
b
c
Differential gain
DG
5-staircase wave
(See Note 4)
d
a
c
0
3
5
%
4
Differential phase
DP
5-staircase wave
(See Note 4)
d
a
c
0
3
5
degree
4
S/H pulse coupling
CP
No signal input
f
b
a
—
—
350 mVp-p
5
SN
50% white
video signal
(See Note 6)
e
a
d
52
56
S/N ratio
—
dB
6
Notes
(1) This is the IC supply current value during clock and signal input.
(2) GL is the output gain of OUT pin when a 500mVp-p, 200kHz sine wave is fed to IN pin.
GL = 20 log
OUT pin output voltage [mVp-p]
[dB]
500 [mVp-p]
(3) Indicates the dissipation at 4.43MHz in relation to 200kHz.
From the output voltage at OUT pin when a 150mVp-p, 200kHz sine wave is fed to IN pin, and from the
output voltage at OUT pin when a 150mVp-p, 4.43MHz sine wave is fed to same, calculation is made
according to the following formula.
fR = 20 log
OUT pin otuput voltage (4.43MHz) [mVp-p]
[dB]
OUT pin output voltage (200kHz) [mVp-p]
–3–
CXL5506M/P
(4) In figure below, differential gain (DG) and differential phase (DP) are tested with a vector scope when
the 5-staircase wave is fed.
150mV
350mV
500mV
150mV
1H 64µs
Input waveform
(5) The internal clock component to the output signal during no-signal input and the leakage of that high
harmonic component are tested.
Test value
(mVp-p)
(6) S/N ratio during a 50% white video signal input shown in figure below is tested at a video noise meter, in
BPF 100kHz to 5MHz, Sub Carrier Trap mode.
175mV
325mV
150mV
1H 64µs
Input waveform
Clock
4fsc (17.734475MHz) sine wave
0.3 to 1.0Vp-p
(0.5Vp-p typ.)
–4–
–5–
50% white
video signal
5-staircase wave
f
e
d
c
SW1
b
200kHz
150mVp-p
sine wave
4.43MHz
150mVp-p
sine wave
a
200kHz
500mVp-p
sine wave
Electrical Characteristics Test Circuit
1µ
1000p
2
1
1M
VG2
IN
7
VDD
8
AB
1µ
3.3µ
5V
6
1000p
a
3
5
9V
2.1k
–50
[dB]
–50
17.7M
d
0
–3
7M
Frequency [Hz]
b
a
SW3 c
[dB] LPF frequency response
Note 1)
4
VSS
CLK
0.1µ
0
–3
b
SW2
OUT
VG1
1000p
CLK
4fSC (17.734475MHz)
0.5Vp-p
sine wave
×3
×3
Noise meter
Vector scope
200
7M
17.7M
Frequency [Hz]
BPF frequency response
Note 2)
BPF
Note 2)
LPF
Note 1)
Spectrum
analyzer
Oscilloscope
CXL5506M/P
–6–
Input
(Non-inverted signal)
AA
Application Circuit
1µ
5V
1M
1
8
1µ
3.3µ
AA
(Inverted signal)
3
6
10
560k
1µ
330k
1000p
1k
470
27p
Delay time
190ns
LPF
5V
2200
Transistor used
NPN: 2SC2785
2200
2200
(ex. TH328LNLS-2620 Toukou made)
Transistor used
PNP: 2SA1175
4
5
0.1µ
(Non-inverted signal)
AA
Output
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
2
12
7
1000p
4fSC (17.734475MHz)
0.5Vp-p
sine wave
CXL5506M/P
CXL5506M/P
Example of Representative Characteristics
Supply current vs. Ambient temperature
Low frequency gain vs. Ambient temperature
2
Low frequency gain [dB]
Supply current [mA]
30
20
10
–20
0
20
40
60
1
0
–1
–2
–20
80
0
Ambient temperature [°C]
20
40
60
80
Ambient temperature [°C]
Frequency response vs. Ambient temperature
Differential gain vs. Ambient temperature
10
0
Differential gain [%]
Frequency response [dB]
8
–1
–2
6
4
2
–3
–20
0
20
40
60
0
–20
80
Ambient temperature [°C]
Supply current vs. Supply voltage
40
60
80
Low frequency gain vs. Supply voltage
2
Low frequency gain [dB]
Supply current [mA]
20
Ambient temperature [°C]
30
20
10
4.75
0
5
Supply voltage [V]
1
0
–1
–2
4.75
5.25
–7–
5
Supply voltage [V]
5.25
CXL5506M/P
Frequency response vs.Supply voltage
Differential gain vs. Supply voltage
10
0
Differential gain [%]
Frequency response [dB]
8
–1
–2
6
4
2
–3
4.75
5
0
4.75
5.25
5
Supply voltage [V]
5.25
Supply voltage [V]
Frequency response
2
Gain [dB]
0
–2
–4
–6
10k
100k
1M
Frequency [Hz]
–8–
10M
CXL5506M/P
Package Outline
Unit: mm
CXL5506M
8PIN SOP (PLASTIC)
+ 0.4
1.85 – 0.15
+ 0.4
6.1 – 0.1
8
5
1
+ 0.2
0.1 – 0.05
6.9
7.9 ± 0.4
+ 0.3
5.3 – 0.1
0.15
0.5 ± 0.2
4
+ 0.1
0.2 – 0.05
0.45 ± 0.1
1.27
0.24 M
PACKAGE STRUCTURE
PACKAGE MATERIAL
EPOXY RESIN
SONY CODE
SOP-8P-L01
LEAD TREATMENT
SOLDER PLATING
EIAJ CODE
SOP008-P-0300
LEAD MATERIAL
42/COPPER ALLOY
PACKAGE MASS
0.1g
JEDEC CODE
CXL5506P
+ 0.3
6.4 – 0.1
+ 0.4
9.4 – 0.1
5
7.62
8
+ 0.1
0.05
0.25 –
8PIN DIP (PLASTIC)
0° to 15°
4
1
+ 0.4
3.7 – 0.1
3.0 MIN
0.5 MIN
2.54
0.5 ± 0.1
1.2 ± 0.15
PACKAGE STRUCTURE
PACKAGE MATERIAL
EPOXY RESIN
SONY CODE
DIP-8P-01
LEAD TREATMENT
SOLDER PLATING
EIAJ CODE
DIP008-P-0300
LEAD MATERIAL
COPPER ALLOY
PACKAGE MASS
0.5g
JEDEC CODE
–9–