CXL5504M/P CMOS-CCD 1H Delay Line for NTSC For the availability of this product, please contact the sales office. Description The CXL5504M/P are CMOS-CCD delay line ICs that provide 1H delay time for NTSC signals including the external low-pass filter. CXL5504M 8 pin SOP (Plastic) CXL5504P 8 pin DIP (Plastic) Features • Single power supply (5V) • Low power consumption 90mW (Typ.) • Built-in peripheral circuits • Clamp level of I/O signal can be selected Functions • 905-bit CCD register • Clock driver • Autobias circuit • Input clamp circuit • Sample and hold circuit Absolute Maximum Ratings (Ta = 25°C) • Supply voltage VDD 6 V • Operating temperature Topr –10 to +60 °C • Storage temperature Tstg –55 to +150 °C • Allowable power dissipation PD CXL5504M 350 mW CXL5504P 480 mW Structure CMOS-CCD Recommended Operating Condition (Ta = 25°C) Supply voltage VDD 5 ± 5% V Recommended Clock Conditions (Ta = 25°C) • Input clock amplitude VCLK 0.4 to 1.0 Vp-p (0.5Vp-p typ.) • Clock frequency fCLK 14.318182 MHz • Input clock waveform Sine wave Input Signal Amplitude VSIG 500mVp-p (Typ.), 572mVp-p (Max.) (at internal clamp condition) AB VDD I/O1 CLK Blook Diagram and Pin Configration (Top View) 8 7 6 5 Autobias circuit Timing circuit Bias circuit Clock driver CCD (905bit) Bias circuit (A) Output circuit Bias circuit (B) (S/H 1bit) 3 4 VSS 2 OUT 1 I/O2 I/O control IN Clamp circuit Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E89931C79-PS CXL5504M/P Pin Description Pin No. Symbol I/O Description 1 IN I Signal input 2 I/O2 I I/O control 2 3 OUT O Signal output 4 VSS — GND 5 CLK I Clock input 6 I/O1 I I/O control 1 7 VDD — Power supply (5V) 8 AB O Autobias DC output Impedance > 10kΩ at no clamp 40 to 500Ω > 100kΩ 600 to 200kΩ Description of Function In the CXL5504M/P, the condition of I/O control pins (Pins 2 and 6) control the input signal clamp condition and the mode of the output signal with relation to its input signal. There are 2 modes for the I/O signal. Input waveform Output waveform (1) PN mode (Low level clamp/reverse phase output mode) (2) NP mode (High level clamp/positive phase output mode) Clamp level Clamp level I/O Control Pin (1) I/O1 (Pin 6) Control of the I/O signal condition DC open ..... Input signal is low level clamped and the output signal is inverted in relation to the input signal. As the pin is biased to 2.5V by means of the resistance inside the IC, a decoupling capacitor of around 1000pF is necessary. GND ............. Input signal is high level clamped and the output signal turns into an inverted signal. (2) I/O2 (Pin 2) Control of the input signal clamp condition 0V ................. Internal clamp condition 5V ................. Non internal clamp condition Center biased to approx. 2.1V by means of the IC internal resistance (several 10kΩ). Usage in this mode is limited to APL 50% signals and in this mode, the maximum input signal amplitude is 200mVp-p. –2– CXL5504M/P Electrical Characteristics Item Symbol Supply current IDDPN Low frequency gain GLPN Frequency response fPN Differential gain DGPN Differential phase DPPN S/H pulse coupling CPPN (Ta = 25°C, VDD = 5V, fCLK = 14.318182MHz, VCLK = 500mVp-p, Sine wave) See "Electrical Characteristics Test Circuit" Test condition Bias condition Vbias1 (V) Min. 1 2 3 4 5 6 7 (Note 1) SW condition DGNP DPNP SNPN SNNP Note — 10 18 28 mA 2 a b — –2 0 2 dB 3 200kHz ←→ 3.57MHz, b b b 150mVp-p, a a b b a a sine wave c 2.1 –2 –1 0 dB 4 a c — 0 5 7 % 5 a c — 0 5 7 degree 5 — — 350 mVp-p 6 52 56 200kHz, 500mVp-p, sine wave a a b a 5-staircase wave (See Note 5) d 5-staircase wave (See Note 5) d No signal input — c a CPNP S/N ratio Unit a a b b a a ←→ fNP Max. a — — c b — IDDNP GLNP b b Typ. 50% white video signal (See Note 7) e b b a b b a b b b b a a b b a a b b a a b b a a VINPN + 0.5 b a a d VINNP — — dB 7 Notes (1) VINPN and VINNP are defined as follows. VINPN and VINNP are the input signal clamp levels of PN and NP modes clamping the video signal sync tip level. CXL5504 1 Input (IN) VINPN VINNP Testing of VINPN and VINNP is executed with a voltmeter under the following SW conditions. Item SW condition 1 2 3 4 5 6 7 VINPN — c b b b a — VINNP — c b a a a — Test point V1 –3– CXL5504M/P (2) This is the IC supply current value during clock and signal input. (3) GLPN, GLNP are output gain of OUT pin when a 500mVp-p, 200kHz sine wave is fed to IN pin. (Example of calculation) GLPN = 20 log OUT pin output voltage (PN mode) [mVp-p] 500 [mVp-p] [dB] (4) Indicates the dissipation at 3.57MHz in relation to 200kHz. From the output voltage at OUT pin when a 150mVp-p, 200kHz sine wave is fed to IN pin, and from the output voltage at OUT pin when a 150mVp-p, 3.57MHz sine wave is fed to same, calculation is made according to the following formula. The input part bias is tested at 2.1V. (Example of calculation) fPN = 20 log OUT pin otuput voltage (PN mode, 3.57MHz) [mVp-p] OUT pin output voltage (PN mode, 200kHz) [mVp-p] [dB] (5) The differential gain (DG) and the differential phase (DP), when the 5-staircase wave in the figure below is input are tested at the vector scope. 143mV 357mV 500mV 143mV 1H 63.56µs Input waveform (Input waveform of NP mode is the inverted waveform in the figure above) (6) The internal clock component to the output signal during no-signal input and the leakage of that high harmonic component are tested. The input part bias is tested at VINPN + 0.5V and VINNP for PN and NP modes respectively. Test value (mVp-p) –4– CXL5504M/P (7) S/N ratio during a 50% white video signal input shown in figure below is tested at a video noise meter, in BPF 100kHz to 4MHz, Sub Carrier Trap mode. 178mV 321mV 143mV 1H 63.56µs Input waveform (Input waveform of NP mode is the inverted waveform in the figure above) Clock fsc (14.318182MHz) sine wave 0.4 to 1.0Vp-p (0.5Vp-p typ.) –5– –6– 50% white video signal 5-staircase wave e d c SW1 b 200kHz 150mVp-p sine wave 3.57MHz 150mVp-p sine wave a 200kHz 500mVp-p sine wave –1 1 Electrical Characteristics Test Circuit c Vbias1 b SW2 a a SW4 1k a SW3 1µ 8 2 1 b 1M b 6 I/O1 SW5 b 1000p 5V a 1000p 3 a 0.1µ 9V 2.1k BPF Note 2) LPF Note 1) ×3 ×3 Noise meter Vector scope Spectrum analyzer Osilloscope –50 200 6M 14.3M Frequency [Hz] Note 2) [dB] BPF frequency response –50 14.3M d 0 –3 6M Frequency [Hz] b a SW7 c Note 1) [dB] LPF frequency response 4 VSS CLK 5 1000p 0 –3 b SW6 OUT CXL5504M/P I/O2 1 7 VDD IN AB 1µ 3.3µ CLK 4fSC (14.318182MHz) 0.5Vp-p sine wave CXL5504M/P –7– Input (Positive phase signal) AA 1µ 5V 1M Application Circuit (Using PN mode) 1 8 1µ 3.3µ AA CXL5504M/P 3 6 10 1k 470 27p 33p 2700 Delay time 250ns LPF 5V 2200 Transistor used NPN: 2SC403 2200 2200 (ex. TH356LSM-4303ZED Toukou made) Transistor used PNP: 2SA1175 4 5 0.1µ (Positive phase signal) AA Output Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. 560k 1µ 330k 1000p (Reverse phase signal) 2 12 7 1000p 4fSC 0.5Vp-p sine wave CXL5504M/P CXL5504M/P Example of Representative Characteristics Supply current vs. Ambient temprature Low frequency gain vs. Ambient temprature 1 Low frequency gain [dB] Supply current [mA] 30 20 10 –20 0 20 40 60 Ambient temprature [°C] 0 –1 –2 –3 –20 80 Frequency response vs. Ambient temprature 0 20 40 60 Ambient temprature [°C] 80 Differential gain vs. Ambient temprature 10 0 Differential gain [%] Frequency response [dB] 8 –1 –2 6 4 2 –3 –20 0 20 40 60 Ambient temprature [°C] 0 –20 80 Supply current vs. Supply voltage 80 1 Low frequency gain [dB] Supply current [mA] 20 40 60 Ambient temprature [°C] Low frequency gain vs. Supply voltage 30 20 10 4.75 0 5 Supply voltage [V] 0 –1 –2 –3 4.75 5.25 –8– 5 Supply voltage [V] 5.25 CXL5504M/P Frequency response vs. Supply voltage Differential gain vs. Supply voltage 10 0 Differential gain [%] Frequency response [dB] 8 –1 –2 6 4 2 –3 4.75 5 Supply voltage [V] 0 4.75 5.25 5 Supply voltage [V] Frequency response 2 Gain [dB] 0 –2 –4 –6 10k 100k Frequency [Hz] –9– 1M 10M 5.25 CXL5504M/P Unit: mm CXL5504M 8PIN SOP (PLASTIC) + 0.4 1.85 – 0.15 + 0.4 6.1 – 0.1 8 5 0.15 6.9 7.9 ± 0.4 + 0.3 5.3 – 0.1 1 + 0.2 0.1 – 0.05 0.5 ± 0.2 4 + 0.1 0.2 – 0.05 0.45 ± 0.1 1.27 0.24 M PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN SONY CODE SOP-8P-L01 LEAD TREATMENT SOLDER PLATING EIAJ CODE SOP008-P-0300 LEAD MATERIAL 42/COPPER ALLOY PACKAGE MASS 0.1g JEDEC CODE 8PIN SOP (PLASTIC) S 6.2 ± 0.3 0.15 1 7.8 ± 0.4 5 5.3 ± 0.3 8 S A 4 + 0.05 0.15 – 0.02 0.4 ± 0.1 1.27 0.75 ± 0.2 0.05 MIN 2.0MAX Package Outline 0.13 M S 10° MAX DETAIL A PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN SONY CODE SOP-8P-L121 LEAD TREATMENT PALLADIUM PLATING EIAJ CODE SOP008-P-0300 LEAD MATERIAL COPPER ALLOY PACKAGE MASS 0.1g JEDEC CODE – 10 – CXL5504M/P CXL5504P + 0.3 6.4 – 0.1 + 0.4 9.4 – 0.1 5 7.62 8 + 0.1 0.05 0.25 – 8PIN DIP (PLASTIC) 0° to 15° 4 1 + 0.4 3.7 – 0.1 3.0 MIN 0.5 MIN 2.54 0.5 ± 0.1 1.2 ± 0.15 PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN SONY CODE DIP-8P-01 LEAD TREATMENT SOLDER PLATING EIAJ CODE DIP008-P-0300 LEAD MATERIAL COPPER ALLOY PACKAGE MASS 0.5g JEDEC CODE – 11 –