TetraFET D2211UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 7.2V – 1GHz SINGLE ENDED L I P H G FEATURES DBC3 Package PIN 1 Source PIN 5 Source • SIMPLIFIED AMPLIFIER DESIGN PIN 2 Drain PIN 6 Gate • SUITABLE FOR BROAD BAND APPLICATIONS PIN 3 Drain PIN 7 Gate PIN 4 Source PIN 8 Source DIM A B C D E F G H I J K L M N O P Q R mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 0.25 Tol. 0.08 0.08 5° 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51 max 0.07 Inches .255 .030 45° .030 .045 .105 .462 .332 .312 .008 .025 .012 .128 .083 .250SQ .065 .005 0.010 • LOW Crss Tol. .003 .003 5° .003 .003 .003 .005 .003 .003 .001 .001 .001 .003 .003 .003 .020 max .003 • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 70W 40V ±20V 16A –65 to 150°C 200°C Prelim. 9/00 D2211UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit V VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 8 mA VGS = 20V VDS = 0 8 mA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 0.8A GPS Common Source Power Gain PO = 10W Drain Efficiency VDS = 7.2V IDSS IGSS h Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VSWR Load Mismatch Tolerance IDQ = 0.8A f = 1GHz Ciss Input Capacitance VDS = 0 Coss Output Capacitance VDS = 12.5V VGS = 0 Crss Reverse Transfer Capacitance VDS = 12.5V VGS = 0 * Pulse Test: VGS = –5V f = 1MHz 40 1 1.44 S 7 dB 40 % 20:1 — 96 pF f = 1MHz 80 pF f = 1MHz 8 pF Pulse Duration = 300 ms , Duty Cycle £ 2% THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Max. 2.5°C / W Prelim. 9/00