SHINDENGEN D4SBS6

SHINDENGEN
Schottky Rectifiers (SBD)
SBD Bridges
OUTLINE DIMENSIONS
D4SBS6
Case : 3S
(Unit : mm)
60V 4A
FEATURES
● Thin Single In-Line Package
● SBD Bridge
● Low VF
APPLICATION
● Switching power supply
● Home Appliances, Office Equipment
● Telecommunication, Factory Automation
RATINGS
●Absolute Maximum Ratings (If not specified Tc=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
Repetitive Peak Surge Reverse Voltage
VRRSM Pulse width 0.5ms, duty 1/40
Average Rectified Forward Current
IO
50Hz sine wave, R-load With heatsink
Peak Surge Forward Current
Repetitive Peak Surge Reverse Power
Dielectric Strength
Mounting Torque
IFSM
PRRSM
Vdis
TOR
Tc=114℃
50Hz sine wave, R-load Without heatsink Ta=46℃
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 ℃
Pulse width 10μs, Rating of per diode, Tj=25℃
Terminals to case, AC 1 minute
(Recommended torque:0.5N・m)
●Electrical Characteristics (If not specified Tc=25℃)
Item
Symbol
Conditions
Forward Voltage
I
=2A,
Pulse
measurement,
Rating of per diode
VF
F
Reverse Current
IR
VR=VRM, Pulse measurement, Rating of per diode
Junction Capacitance
Cj f=1MHz, VR=10V, Rating of per diode
θjc junction to case With heatsink
Thermal Resistance
θjl junction to lead Without heatsink
θja junction to ambient Without heatsink
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Ratings
-40∼150
150
60
65
4
2.3
60
330
2
0.8
Unit
℃
℃
V
V
A
A
W
kV
N・m
Ratings
Unit
Max.0.62
V
Max.2
mA
TYP 180 pF
Max.5.5
Max.6 ℃/W
Max.30
D4SBS6
Forward Voltage
Forward Current IF [A]
10
1
Tc=150°C [MAX]
Tc=150°C [TYP]
Tc=25°C [MAX]
Tc=25°C [TYP]
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
Junction Capacitance Cj [pF]
10
0.1
100
1000
10
Junction Capacitance
Reverse Voltage VR [V]
1
D4SBS6
f=1MHz
Tc=25°C
TYP
per diode
D4SBS6
Reverse Current
1000
Tc=150°C [MAX]
100
Reverse Current IR [mA]
Tc=150°C [TYP]
Tc=125°C [TYP]
10
Tc=100°C [TYP]
Tc=75°C [TYP]
1
0.1
Pulse measurement per diode
0.01
0
10
20
30
40
Reverse Voltage VR [V]
50
60
D4SBS6
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
20
DC
D=0.05
0.1
15
0.2
0.3
10
0.5
5
SIN
0.8
0
0
10
20
30
40
50
60
70
Reverse Voltage VR [V]
Tj = 150°C
0
VR
tp
D=tp /T
T
D4SBS6
Forward Power Dissipation
8
DC
Forward Power Dissipation PF [W]
7
D=0.8
6
SIN
0.5
0.3
5
0.2
0.1
4
0.05
3
2
1
0
0
1
2
3
4
5
6
7
Average Rectified Forward Current IO [A]
Tj = 150°C
IO
0
tp
D=tp /T
T
D4SBS6
Derating Curve
Average Rectified Forward Current IO [A]
8
Heatsink
Tc
120
140
Tc
7
DC
6
5
4
D=0.8
0.5
SIN
0.3
3 0.2
2
0.1
0.05
1
0
80
90
100
110
130
Case Temperature Tc [°C]
Sine wave
R-load
with heatsink
150
160
D4SBS6
Derating Curve
Average Rectified Forward Current IO [A]
5
PCB
4
DC
Glass-epoxy substrate
Soldering land 5mmφ
D=0.8
3
0.5
2
SIN
0.3
0.2
0.1
1
0
0.05
0
20
40
60
80
100
120
Ambient Temperature Ta [°C]
Sine wave
R-load
Free in air
140
160
D4SBS6
Peak Surge Forward Capability
IFSM
100
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=125°C before
surge current is applied
Peak Surge Forward Current IFSM [A]
80
60
40
20
0
1
2
5
10
20
Number of Cycles [cycles]
50
100
SBD
Repetitive Surge Reverse Power Derating Curve
120
PRRSM Derating [%]
100
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP
SBD
Repetitive Surge Reverse Power Capability
PRRSM(t p) / PRRSM(t p=10µs) Ratio
10
1
0.1
1
10
100
Pulse Width t p [µs]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP