SHINDENGEN Schottky Rectifiers (SBD) Single OUTLINE DIMENSIONS DE5S6M Case : E-pack Unit : mm 60V 5A FEATURES ● SMT ● Tj150℃ ● PRRSM avalanche ● guaranteed High current capacity with Small Package APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tｃ=25℃) Item Symbol Conditions Tstg Storage Temperature Operating Junction Temperature Tj VRM Maximum Reverse Voltage VRRSM Pulse width 0.5ms, duty1/40 Repetitive Peak Surge Reverse Voltage Average Rectified Forward Current IO 50Hz sine wave, R-load, Tc=96℃ On alumina substrate 50Hz sine wave, R-load, Ta=45℃ On glass-epoxy substrate Peak Surge Forward Current Repetitive Peak Surge Reverse Power IFSM PRRSM ●Electrical Characteristics (If not specified Item Symbol VF Forward Voltage Reverse Current IR Cj Junction Capacitance θjc Thermal Resistance θja 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ Pulse width 10μs, Tj=25℃ Ratings -40∼150 150 60 65 5 2.6 90 330 Unit ℃ ℃ V V A Ratings Max.0.58 Max.2.5 Typ.200 Max.12 Max.55 Unit V mA pF ℃/W A W Tｃ=25℃) Conditions IF=5A, Pulse measurement V R=VRM, Pulse measurement f=1MHz, VR=10V junction to case junction to ambient Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd DE5S6M Forward Voltage Forward Current IF [A] 10 Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 Junction Capacitance Cj [pF] 0.1 100 1000 10 Junction Capacitance Reverse Voltage VR [V] 1 DE5S6M f=1MHz Tc=25°C TYP per diode DE5S6M Reverse Current 1000 Tc=150°C [MAX] Tc=150°C [TYP] 100 Reverse Current IR [mA] Tc=125°C [TYP] 10 Tc=100°C [TYP] Tc=75°C [TYP] 1 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 Reverse Voltage VR [V] 50 60 D5S6M Reverse Power Dissipation Reverse Power Dissipation PR [W] 15 DC D=0.05 0.1 0.2 10 0.3 0.5 5 SIN 0.8 0 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T DE5S6M Forward Power Dissipation Forward Power Dissipation PF [W] 6 5 DC D=0.8 4 SIN 0.2 3 0.5 0.3 0.1 0.05 2 1 0 0 1 2 3 4 5 6 7 8 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T DE5S6M Derating Curve Average Rectified Forward Current IO [A] 10 DC 8 D=0.8 6 0.5 SIN 0.3 4 0.2 0.1 2 0 0.05 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 30V IO 0 0 VR tp D=tp /T T DE5S6M Derating Curve 5 Average Rectified Forward Current IO [A] Alumina substrate DC Alumina base 4 Soldering land (leads) 1.5mm × 2.5mm Soldering land (heatsink) 7mmφ Conductor layer 20µm Substrate thickness 0.64mm D=0.8 0.5 3 SIN 0.3 2 0.2 0.1 0.05 1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 20V IO 0 0 VR tp D=tp /T T DE5S6M Derating Curve Average Rectified Forward Current IO [A] 1 Self-supported 0.8 Glass-epoxy substrate Soldering land 2mmφ Lead length 9.5mm PCB thickness 1.6mm 0.6 DC D=0.8 0.4 SIN 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 30V IO 0 0 VR tp D=tp /T T DE5S6M Peak Surge Forward Capability IFSM 150 10ms 10ms Peak Surge Forward Current IFSM [A] 1 cycle non-repetitive, sine wave, Tj=125°C before surge current is applied 100 50 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP