DG411/883, DG412/883 DG413/883 ® August 2003 Features CT T O D U C E M EN t R P E A ra T L ente O LE R EP OBS ENDED upport C om/tsc M S il.c COM chnical w.iMonolithic nters E R Quad SPST e T w NO t our SIL or w c a t con -INTER 8 1-88 Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • ON-Resistance <35Ω Max • Low Power Consumption (PD <35µW) • Fast Switching Action - tON <175ns - tOFF <145ns • Low Charge Injection • TTL, CMOS Compatible • Single or Split Supply Operation Applications • Audio Switching • Data Acquisition • Hi-Rel Systems • Sample and Hold Circuits • Communication Systems • Automatic Test Equipment Part Number Information PACKAGE DG411AK/883 -55oC +125oC 16 Lead CerDIP DG412AK/883 -55oC to +125oC 16 Lead CerDIP DG413AK/883 o to o -55 C to +125 C 16 Lead CerDIP Functional Diagrams Pinout DG411/883, DG412/883, DG413/883 (CERDIP) TOP VIEW IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 (NC) NO CONNECTION These switches feature lower analog ON resistance (<35Ω) and faster switch time (tON <175ns) compared to the DG211 or DG212. Charge injection has been reduced, simplifying sample and hold applications. The four switches are bilateral, equally matched for AC or bidirectional signals. The ON resistance variation with analog signals is quite low over a ±15V analog input range. The switches in the DG411/883 and DG412/883 are identical, differing only in the polarity of the selection logic. Two of the switches in the DG413/883 (#1 and #4) use the logic of the DG211 and DG411/883 (i.e. a logic “0” turns the switch ON) and the other two switches use DG212 and DG412/883 positive logic. This permits independent control of turn-on and turn-off times for SPDT configurations, permitting “breakbefore-make” or “make-before-break” operation with a minimum of external logic. • Battery Operated Systems TEMP. RANGE The DG411/883 series monolithic CMOS analog switches are drop-in replacements for the popular DG211 and DG212 series devices. They include four independent single pole throw (SPST) analog switches, and TTL and CMOS compatible digital inputs. The improvements in the DG411/883 series are made possible by using a high voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS technologies. The 44V maximum voltage range permits controlling 40VP-P signals. Power supplies may be single-ended from +5V to +34V, or split from ±5V to ±20V. • Upgrade from DG211/DG212 PART NUMBER CMOS Analog Switches Four SPST Switches per Package Switches Shown for Logic “1” Input DG411/883 DG412/883 S1 IN1 DG413/883 S1 IN1 D1 S2 IN2 D1 S2 D2 S3 D3 S4 D2 S3 IN3 IN3 IN4 D1 S2 IN2 IN2 D2 S3 IN3 S1 IN1 D3 S4 IN4 IN4 D4 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2003. All Rights Reserved 1 All other trademarks mentioned are the property of their respective owners. D3 S4 D4 D4 Spec Number File Number 512043 3681.1 DG411/883, DG412/883, DG413/883 Pin Description TRUTH TABLE DG411/ 883 DG412/ 883 LOGIC SWITCH SWITCH SWITCH 1, 4 SWITCH 2, 3 Source (Input) Terminal for Switch 1 0 ON OFF OFF ON Negative Power Supply Terminal 1 OFF ON ON OFF PIN SYMBOL DESCRIPTION 1 IN1 Logic Control for Switch 1 2 D1 Drain (Output) Terminal for Switch 1 3 S1 4 V- 5 GND 6 S4 Source (Input) Terminal for Switch 4 7 D4 Drain (Output) Terminal for Switch 4 8 IN4 Logic Control for Switch 4 9 IN3 Logic Control for Switch 3 10 D3 Drain (Output) Terminal for Switch 3 11 S3 Source (Input) Terminal for Switch 3 12 VL Logic Reference Voltage 13 V+ Positive Power Supply Terminal (Substrate) 14 S2 Source (Input) Terminal for Switch 2 15 D2 Drain (Output) Terminal for Switch 2 16 IN2 Logic Control for Switch 2 DG413/883 NOTE: Logic “0” ≤0.8V. Logic “1” ≥2.4V. Ground Terminal (Logic Common) Spec Number 2 512043 Specifications DG411/883, DG412/883, DG413/883 Absolute Maximum Ratings Thermal Information V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V VL (Note 2) . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3V) to (V+) +0.3V Digital Inputs, VS, VD (Note 2) . . . . . (V-) -2V to (V+) + 2V or 30mA, Whichever Occurs First Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA Current, S or D (Pulsed 1ms, 10% Duty Cycle) . . . . . . . . . . . 100mA Storage Temperature Range (A Suffix) . . . . . . . . . -65oC to +125oC Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC Thermal Resistance (Note 3) θJA θJC CerDIP Package . . . . . . . . . . . . . . . . . . . 75oC/W 20oC/W Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Operating Temperature (A Suffix) . . . . . . . . . . . . . . -55oC to +125oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Max Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V Max Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V Min Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .≤20ns TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified PARAMETERS Drain-to-Source ON Resistance SYMBOL RDS(ON) DG411/883 DG412/883 CONDITIONS V+ = +13.5V, V- = -13.5V, IS = -10mA, VD = ±8.5V DG413/883 V+ = +10.8V, V- = -0V, IS = -10mA, VD = 3.0V and 8.0V DG412/883 DG413/883 DG411/883 DG412/883 DG412/883 DG413/883 VIN = 0.8V VIN = 2.4V IS(OFF) V+ = 16.5V, V- = -16.5V, VD = -15.5V, VS = 15.5V VIN = 2.4V VIN = 0.8V VIN = 0.8V or 2.4V (Note 1) V+ = 16.5V, V- = -16.5V, VD = 15.5V, VS = -15.5V VIN = 2.4V VIN = 0.8V VIN = 0.8V or 2.4V (Note 1) LIMITS MIN MAX UNITS 1, 3 +25oC, -55oC 0 35 Ω 2 +125oC 0 45 Ω 1, 3 +25 C, -55 C 0 35 Ω 2 +125oC 0 45 Ω o o 1, 3 +25 C, -55 C 0 35 Ω 2 +125oC 0 45 Ω 0 80 Ω 0 100 Ω 1, 3 2 VIN = 0.8V or 2.4V (Note 1) DG413/883 DG411/883 VIN = 2.4V VIN = 0.8V or 2.4V (Note 1) DG411/883 Source OFF Leakage Current VIN = 0.8V GROUP A SUBGROUP TEMPERATURE o +25oC, o -55oC +125oC 1, 3 +25 C, -55 C 0 80 Ω 2 +125oC 0 100 Ω o o 1, 3 +25 C, -55 C 0 80 Ω 2 +125oC 0 100 Ω 1 +25oC -0.25 +0.25 nA 2, 3 +125oC, -55oC -20 +20 nA o o o 1 +25 C -0.25 +0.25 nA 2, 3 +125oC, -55oC -20 +20 nA o 1 +25 C -0.25 +0.25 nA 2, 3 +125oC, -55oC -20 +20 nA o 1 +25 C -0.25 +0.25 nA 2, 3 +125oC, -55oC -20 +20 nA o 1 +25 C -0.25 +0.25 nA 2, 3 +125oC, -55oC -20 +20 nA 1 +25oC -0.25 +0.25 nA 2, 3 +125oC, -55oC -20 +20 nA Spec Number 3 512043 Specifications DG411/883, DG412/883, DG413/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified PARAMETERS Drain OFF Leakage Current SYMBOL ID(OFF) DG411/883 DG412/883 CONDITIONS V+ = 16.5V, V- = -16.5V, VD = -15.5V, VS = 15.5V DG413/883 V+ = 16.5V, V- = -16.5V, VD = 15.5V, VS = -15.5V DG412/883 DG413/883 DG411/883 VIN = 0.8V VIN = 0.8V or 2.4V (Note 1) DG411/883 Channel ON Leakage Current VIN = 2.4V VIN = 2.4V VIN = 0.8V VIN = 0.8V or 2.4V (Note 1) ID(ON) + IS(ON) DG412/883 DG413/883 V+ = 16.5V, VIN = 0.8V V- = -16.5V, VS = VD = ±15.5V VIN = 2.4V VIN = 0.8V or 2.4V (Note 1) GROUP A SUBGROUP TEMPERATURE 1 +25oC o o LIMITS MIN MAX UNITS -0.25 +0.25 nA 2, 3 +125 C, -55 C -20 +20 nA 1 +25oC -0.25 +0.25 nA o o 2, 3 +125 C, -55 C -20 +20 nA 1 +25oC -0.25 +0.25 nA o o 2, 3 +125 C, -55 C -20 +20 nA 1 +25oC -0.25 +0.25 nA o o 2, 3 +125 C, -55 C -20 +20 nA 1 +25oC -0.25 +0.25 nA o o 2, 3 +125 C, -55 C -20 +20 nA 1 +25oC -0.25 +0.25 nA o o 2, 3 +125 C, -55 C -20 +20 nA 1 +25oC -0.4 +0.4 nA o o 2, 3 +125 C, -55 C -40 +40 nA 1 +25oC -0.4 +0.4 nA o o 2, 3 +125 C, -55 C -40 +40 nA 1 +25oC -0.4 +0.4 nA -55oC -40 +40 nA Input Current with VIN Low IIL Input Under Test = 0.8V, All Others = 2.4V 1, 2, 3 +25oC, +125oC, -55oC -0.5 +0.5 µA Input Current with VIN High IIH Input Under Test = 2.4V, All Others = 0.8V 1, 2, 3 +25oC, +125oC, -55oC -0.5 +0.5 µA Positive Supply Current I+ V+ = 16.5V, V- = -16.5, VIN = 0Vor 5.0V 1 +25oC - +1.0 µA V+ = 13.2V, V- = 0V, VIN = 0Vor 5.0V VL = 5.25V Negative Supply Current I- V+ = 16.5V, V- = -16.5, VIN = 0V or 5.0V V+ = 13.2V, V- = 0V, VIN = 0V or 5.0V VL = 5.25V Logic Supply Current IL V+ = 16.5V, V- = -16.5, VIN = 0V or 5.0V V+ = 13.2V, V- = 0V, VIN = 0V or 5.0V VL = 5.25V Ground Current IGND V+ = 16.5V, V- = -16.5, VIN = 0V or 5.0V V+ = 13.2V, V- = 0V, VIN = 0V or 5.0V VL = 5.25V 2, 3 +125oC, 2, 3 +125 C, -55 C - +5.0 µA 1 +25oC - +1.0 µA o o 2, 3 +125 C, -55 C - +5.0 µA 1 +25oC -1.0 - µA 2, 3 +125oC, -55oC -5.0 - µA o o 1 +25 C -1.0 - µA 2, 3 +125oC, -55oC -5.0 - µA 1 +25oC - +1.0 µA o 2, 3 +125 C, -55 C - +5.0 µA 1 +25oC - +1.0 µA o o 2, 3 +125 C, -55 C - +5.0 µA 1 +25oC -1.0 - µA 2, 3 +125oC, -55oC -5.0 - µA o o 1 +25 C -1.0 - µA 2, 3 +125oC, -55oC -5.0 - µA o Spec Number 4 512043 Specifications DG411/883, DG412/883, DG413/883 TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified PARAMETERS SYMBOL Turn ON Time CONDITIONS tON Turn OFF Time tOFF LIMITS GROUP A SUBGROUP TEMPERATURE MIN MAX UNITS 0 175 ns +125 C 0 240 ns +25oC, -55oC 0 250 ns +125 C 0 400 ns 9, 11 +25oC, -55oC 0 145 ns 10 +125oC 0 160 ns CL = 35pF, VS = ±10V, RL = 300Ω 9, 11 10 V+ = 12V, V- = 0V, CL = 35pF, VS = +8V, RL = 300Ω 9, 11 10 CL = 35pF, VS = ±10V, RL = 300Ω V+ = 12V, V- = 0V, CL = 35pF, VS = +8V, RL = 300Ω +25oC, -55oC o o o o 9, 11 +25 C, -55 C 0 125 ns 10 +125oC 0 140 ns TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1) Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified PARAMETERS SYMBOL Charge Injection Q LIMITS GROUP A SUBGROUP TEMPERATURE CONDITIONS See Figure 2, VG = 0V, RG = 0Ω , TA = +25oC, CL = 10nF See Figure 2, VG = 6V, RG = 0Ω , TA = +25oC CL = 10nF, V+ = 12V, V- = 0V o 9 +25 C MIN MAX UNITS -100 +100 pC +25oC pC o 9 +25 C -100 +100 +25oC pC pC NOTES: 1. VIN = Input Voltage to Perform Proper Function. 2. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. 3. All leads soldered or welded to PC board. 4. Parameters listed in Table 3 are controlled via design or process and are not directly tested at final production. These parameters are lab characterized upon initial design release or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 1), 2, 3, 9, 10, 11 Group A Test Requirements 1, 2, 3, 9, 10, 11 Groups C and D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. Spec Number 5 512043 DG411/883, DG412/883, DG413/883 Die Characteristics DIE DIMENSIONS: 2760µm x 1780µm x 485 ± 25µm METALLIZATION: Type: SiAl Thickness: 12kÅ ± 1kÅ GLASSIVATION: Type: Nitride Thickness: 8kÅ ± 1kÅ WORST CASE CURRENT DENSITY: 1.5 x 105A/cm2 Metallization Mask Layout DG411/883, DG412/883, DG413/883 D1 2 IN1 IN2 1 16 15 D2 S1 3 14 S2 V- 4 13 V+ SUBSTRATE GND 5 12 VL S4 6 11 S3 7 8 9 10 D4 IN4 IN3 D3 Spec Number 6 512043 DG411/883, DG412/883, DG413/883 Test Circuits VO is the steady state output with the switch on. Feedthrough via switch capacitance may result in spikes at the leading and trailing edge of the output waveform. V+ RG tR < 20ns (10% to 90% VIN) tF < 20ns (90% to 10% VIN) D1 VO VG CL 3V LOGIC INPUT V- 50% VIN = 3V 0V tOFF GND SWITCH INPUT VS VO SWITCH OUTPUT FIGURE 2A. 0.9 VO 0.9 VO 0V tON ∆VO NOTE: Logic input waveform is inverted for switches that have the opposite logic sense. 0V INX FIGURE 1A. +5V ON OFF OFF ON Q = ∆VO x CL OFF +15V VL SWITCH INPUT OFF V+ SWITCH OUTPUT D1 S1 VO INX IN1 RL LOGIC INPUT INX dependent on switch configuration input polarity determined by sense of switch. CL V- GND FIGURE 2B. -15V FIGURE 2. CHARGE INJECTION Repeat test for all IN and S. For load conditions, see Specifications CL (includes fixture and stray capacitance) VO = VS RL ---------------------------------R L + R DS ( ON ) FIGURE 1B. FIGURE 1. SWITCHING TIME Spec Number 7 512043 DG411/883, DG412/883, DG413/883 Burn-In Circuit DG411/883, DG412/883, DG413/883 CERAMIC DIP R1 V- C1 D1 VA 1 IN1 IN2 16 2 D1 D2 15 3 S1 S2 14 4 V- V+ 13 5 GND VL 12 6 S4 S3 11 7 D4 D3 10 8 IN4 IN3 R4 R2 V+ D2 C2 D3 C3 VL 9 R4 Typical Schematic Diagram (Typical Channel) V+ S VVL V+ INX D GND V- Spec Number 8 512043 DG411/883, DG412/883, DG413/883 Ceramic Dual-In-Line Frit Seal Packages (CerDIP) F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A) LEAD FINISH c1 16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE -D- -A- BASE METAL INCHES (c) E b1 M M (b) -Bbbb S C A-B S SECTION A-A D S D BASE PLANE Q -C- SEATING PLANE A α L S1 eA A A b2 b ccc M C A-B S e eA/2 c aaa M C A - B S D S D S SYMBOL MIN MAX MIN MAX NOTES A - 0.200 - 5.08 - b 0.014 0.026 0.36 0.66 2 b1 0.014 0.023 0.36 0.58 3 b2 0.045 0.065 1.14 1.65 - b3 0.023 0.045 0.58 1.14 4 c 0.008 0.018 0.20 0.46 2 c1 0.008 0.015 0.20 0.38 3 D - 0.840 - 21.34 5 E 0.220 0.310 5.59 7.87 5 e 0.100 BSC 2.54 BSC - eA 0.300 BSC 7.62 BSC - 3.81 BSC - eA/2 NOTES: 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. MILLIMETERS 0.150 BSC L 0.125 0.200 3.18 5.08 - Q 0.015 0.060 0.38 1.52 6 S1 0.005 - 0.13 - 7 α 90 aaa - 0.015 - 0.38 - bbb - 0.030 - 0.76 - 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. ccc - 0.010 - 0.25 - M - 0.0015 - 0.038 2, 3 4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b2. N 2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. o 105 o 90 16 o 105 o - 16 8 Rev. 0 4/94 5. This dimension allows for off-center lid, meniscus, and glass overrun. 6. Dimension Q shall be measured from the seating plane to the base plane. 7. Measure dimension S1 at all four corners. 8. N is the maximum number of terminal positions. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling dimension: INCH. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Spec Number 9 512043 DG411, DG412 DG413 DESIGN INFORMATION Monolithic Quad SPST CMOS Analog Switches The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application and design information only. No guarantee is implied. Typical Performance Curves ON-RESISTANCE vs VD AND POWER SUPPLY VOLTAGE 45 40 RDS(ON) (Ω) 35 A: B: C: D: E: F: SWITCHING TIME vs TEMPERATURE 240 ±5V ±8V ±10V ±12V ±15V ±20V V+ = 15V, V- = -15V 210 VL = 5V, VS = 10V A 180 tON, tOFF (ns) 50 B 30 C 25 D E 20 F 150 tON 120 tOFF 90 15 60 10 30 5 0 -20 TA = +25oC -15 -10 -5 0 5 DRAIN VOLTAGE (V) 10 15 0 -55 20 LEAKAGE CURRENT vs ANALOG VOLTAGE -35 -15 5 25 45 65 TEMPERATURE (oC) 85 105 125 SUPPLY CURRENT vs INPUT SWITCHING FREQUENCY 100mA 40 V+ = 15V, V- = -15V 30 VL = 5V, TA = 25oC 10mA V+ = 15V, V- = -15V VL = 5V 20 ID(OFF) 1mA I+, IISUPPLY IS, ID (pA) 10 0 IS(OFF) -10 ID + S(ON) -20 100µA 4SW 10µA IL -30 1µA 4SW -40 100nA -50 -60 -15 1SW 1SW -10 -5 0 5 10 DRAIN OR SOURCE VOLTAGE (V) 10nA 10 15 100 1K 10K 100K 1M 10M FREQUENCY (Hz) CHARGE INJECTION vs ANALOG VOLTAGE (VD) CHARGE INJECTION vs ANALOG VOLTAGE (VS) 100 140 V+ = 15V, V- = -15V 120 VL = 5V V+ = 15V, V- = -15V 80 VL = 5V CL = 10nF 100 60 80 CL = 10nF Q (pC) Q (pC) 40 20 0 CL = 1nF 60 40 20 0 -20 CL = 1nF -20 -40 -40 -60 -15 -60 -15 -10 -5 0 5 SOURCE VOLTAGE (V) 10 15 -10 -5 0 5 DRAIN VOLTAGE (V) 10 Spec Number 10 15 512043