AD ADG513ABR

a
LC2MOS
Precision 5 V/3 V Quad SPST Switches
ADG511/ADG512/ADG513
FEATURES
+3 V, +5 V or ⴞ5 V Power Supplies
Ultralow Power Dissipation (<0.5 ␮W)
Low Leakage (<100 pA)
Low On Resistance (<50 ⍀)
Fast Switching Times
Low Charge Injection
TTL/CMOS Compatible
16-Lead DIP or SOIC Package
APPLICATIONS
Battery Powered Instruments
Single Supply Systems
Remote Powered Equipment
+5 V Supply Systems
Computer Peripherals such as Disk Drives
Precision Instrumentation
Audio and Video Switching
Automatic Test Equipment
Precision Data Acquisition
Sample Hold Systems
Communication Systems
Compatible with ⴞ5 V Supply DACs and ADCs such as
AD7840/8, AD7870/1/2/4/5/6/8
FUNCTIONAL BLOCK DIAGRAMS
S1
S1
IN1
IN1
D1
S2
D1
S2
ADG511
D2
S3
ADG512
D2
S3
IN3
IN3
D3
S4
ADG513
D4
D2
S3
IN3
D3
S4
IN4
IN4
D1
S2
IN2
IN2
IN2
S1
IN1
D3
S4
IN4
D4
D4
SWITCHES SHOWN FOR A LOGIC "1" INPUT
The ADG511, ADG512 and ADG513 contain four independent SPST switches. The ADG511 and ADG512 differ only in
that the digital control logic is inverted. The ADG511 switch is
turned on with a logic low on the appropriate control input,
while a logic high is required for the ADG512. The ADG513
contains two switches whose digital control logic is similar to
that of the ADG511 while the logic is inverted in the remaining
two switches.
PRODUCT HIGHLIGHTS
GENERAL DESCRIPTION
The ADG511, ADG512 and ADG513 are monolithic CMOS
ICs containing four independently selectable analog switches.
These switches feature low, well-controlled on resistance and
wide analog signal range, making them ideal for precision
analog signal switching.
These switch arrays are fabricated using Analog Devices’
advanced linear compatible CMOS (LC2MOS) process which
offers the additional benefits of low leakage currents, ultralow
power dissipation and low capacitance for fast switching speeds
with minimum charge injection. These features make the
ADG511, ADG512 and ADG513 the optimum choice for a
wide variety of signal switching tasks in precision analog signal
processing and data acquisition systems.
1. +5 Volt Single Supply Operation
The ADG511/ADG512/ADG513 offers high performance,
including low on resistance and wide signal range, fully
specified and guaranteed with +3 V, ± 5 V as well as +5 V
supply rails.
2. Ultralow Power Dissipation
CMOS construction ensures ultralow power dissipation.
3. Low RON
4. Break-Before-Make Switching
Switches are guaranteed to have break-before-make operation. This allows multiple outputs to be tied together for
multiplexer applications without the possibility of momentary
shorting between channels.
The ability to operate from single +3 V, +5 V or ± 5 V bipolar
supplies make the ADG511, ADG512 and ADG513 perfect for
use in battery-operated instruments, 4–20 mA loop systems and
with the new generation of DACs and ADCs from Analog
Devices. The use of 5 V supplies and reduced operating currents
give much lower power dissipation than devices operating from
± 15 V supplies.
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1999
ADG511/ADG512/ADG513–SPECIFICATIONS1
Dual Supply (V
DD
= +5 V ⴞ 10%, VSS = –5 V ⴞ 10%, GND = 0 V, unless otherwise noted)
Parameter
B Versions
–40ⴗC to
+25ⴗC
+85ⴗC
ANALOG SWITCH
Analog Signal Range
RON
30
T Versions
–55ⴗC to
+25ⴗC
+125ⴗC
VDD to VSS
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
± 0.025
± 0.1
± 0.025
± 0.1
± 0.05
± 0.2
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
0.005
DYNAMIC CHARACTERISTICS2
tON
200
Test Conditions/Comments
V
Ω typ
Ω max
VD = ± 3.5 V, IS = –10 mA;
VDD = +4.5 V, VSS = –4.5 V
±5
nA typ
nA max
nA typ
nA max
nA typ
nA max
VDD = +5.5 V, VSS = –5.5 V
VD = ± 4.5 V, VS = ⫿4.5 V;
Test Circuit 2
VD = ± 4.5 V, VS = ⫿4.5 V;
Test Circuit 2
VD = VS = ± 4.5 V;
Test Circuit 3
2.4
0.8
V min
V max
± 0.1
µA typ
µA max
VIN = VINL or VINH
RL = 300 Ω. CL = 35 pF;
VS = ± 3 V; Test Circuit 4
RL = 300 Ω. CL = 35 pF;
VS = ± 3 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF;
VS1 = VS2 = +3 V; Test Circuit 5
VS = 0 V, RS = 0 Ω, CL = 10 nF;
Test Circuit 6
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 7
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 8
f = 1 MHz
f = 1 MHz
f = 1 MHz
VDD to VSS
30
50
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Units
± 2.5
± 2.5
±5
50
± 0.025
± 0.1
± 0.025
± 0.1
± 0.05
± 0.2
2.4
0.8
± 0.1
0.005
± 2.5
± 2.5
200
Break-Before-Make Time
Delay, tD (ADG513 Only)
Charge Injection
100
100
ns typ
ns max
ns typ
ns max
ns typ
11
11
pC typ
OFF Isolation
68
68
dB typ
Channel-to-Channel Crosstalk
85
85
dB typ
CS (OFF)
CD (OFF)
CD, CS (ON)
9
9
35
9
9
35
pF typ
pF typ
pF typ
375
tOFF
120
375
120
150
POWER REQUIREMENTS
VDD
VSS
IDD
150
+4.5/5.5
–4.5/–5.5
0.0001
+4.5/5.5
–4.5/–5.5
0.0001
1
ISS
0.0001
1
0.0001
1
1
V min/max
V min/max
µA typ
µA max
µA typ
µA max
VDD = +5.5 V, VSS = –5.5 V
Digital Inputs = 0 V or 5 V
NOTES
1
Temperature ranges are as follows: B Versions –40°C to +85°C; T Versions –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. B
ADG511/ADG512/ADG513
Single Supply (V
DD
= +5 V ⴞ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)
Parameter
B Versions
–40ⴗC to
+25ⴗC
+85ⴗC
ANALOG SWITCH
Analog Signal Range
RON
45
T Versions
–55ⴗC to
+25ⴗC
+125ⴗC
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
± 0.025
± 0.1
± 0.025
± 0.1
± 0.05
± 0.2
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
0.005
DYNAMIC CHARACTERISTICS2
tON
250
Test Conditions/Comments
V
Ω typ
Ω max
VD = +3.5 V, IS = –10 mA;
VDD = +4.5 V
±5
nA typ
nA max
nA typ
nA max
nA typ
nA max
VDD = +5.5 V
VD = 4.5/1 V, VS = 1Ⲑ4.5 V;
Test Circuit 2
VD = 4.5/1 V, VS = 1Ⲑ4.5 V;
Test Circuit 2
VD = VS = +4.5 V/+1 V;
Test Circuit 3
2.4
0.8
V min
V max
± 0.1
µA typ
µA max
VIN = VINL or VINH
0 V to VDD
0 V to VDD
45
75
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Units
± 2.5
± 2.5
±5
75
± 0.025
± 0.1
± 0.025
± 0.1
± 0.05
± 0.2
2.4
0.8
± 0.1
0.005
± 2.5
± 2.5
Break-Before-Make Time
Delay, tD (ADG513 Only)
Charge Injection
200
200
ns typ
ns max
ns typ
ns max
ns typ
16
16
pC typ
OFF Isolation
68
68
dB typ
Channel-to-Channel Crosstalk
85
85
dB typ
CS (OFF)
CD (OFF)
CD, CS (ON)
9
9
35
9
9
35
pF typ
pF typ
pF typ
RL = 300 Ω, CL = 35 pF;
VS = +2 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF;
VS = +2 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF;
VS1 = VS2 = +2 V; Test Circuit 5
VS = 0 V, RS = 0 Ω, CL = 10 nF;
Test Circuit 6
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 7
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 8
f = 1 MHz
f = 1 MHz
f = 1 MHz
V min/max
µA typ
µA max
VDD = +5.5 V
Digital Inputs = 0 V or 5 V
250
500
tOFF
50
500
50
100
POWER REQUIREMENTS
VDD
IDD
100
+4.5/5.5
0.0001
+4.5/5.5
0.0001
1
1
NOTES
1
Temperature ranges are as follows: B Versions –40°C to +85°C; T Versions –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. B
–3–
ADG511/ADG512/ADG513–SPECIFICATIONS1
Single Supply (V
DD
= +3.3 V ⴞ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)
Parameter
B Versions
0ⴗC to
+25ⴗC
+70ⴗC
ANALOG SWITCH
Analog Signal Range
RON
200
Units
Test Conditions/Comments
V
Ω typ
Ω max
VD = +1.5 V, IS = –1 mA;
VDD = +3 V
±5
nA typ
nA max
nA typ
nA max
nA typ
nA max
VDD = +3.6 V
VD = 2.6/1 V, VS = 1Ⲑ2.6 V;
Test Circuit 2
VD = 2.6/1 V, VS = 1Ⲑ2.6 V;
Test Circuit 2
VD = VS = +2.6 V/+1 V;
Test Circuit 3
2.4
0.8
V min
V max
± 0.1
µA typ
µA max
VIN = VINL or VINH
0 V to VDD
500
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
± 0.025
± 0.1
± 0.025
± 0.1
± 0.05
± 0.2
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
0.005
DYNAMIC CHARACTERISTICS2
tON
600
± 2.5
± 2.5
tOFF
100
Break-Before-Make Time
Delay, tD (ADG513 Only)
Charge Injection
500
ns typ
ns max
ns typ
ns max
ns typ
11
pC typ
OFF Isolation
68
dB typ
Channel-to-Channel Crosstalk
85
dB typ
CS (OFF)
CD (OFF)
CD, CS (ON)
9
9
35
pF typ
pF typ
pF typ
RL = 300 Ω, CL = 35 pF;
VS = +1 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF;
VS = +1 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF;
VS1 = VS2 = +1 V; Test Circuit 5
VS = 0 V, RS = 0 Ω, CL = 10 nF;
Test Circuit 6
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 7
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 8
f = 1 MHz
f = 1 MHz
f = 1 MHz
V min/max
µA typ
µA max
VDD = +3.6 V
Digital Inputs = 0 V or 3 V
1200
160
POWER REQUIREMENTS
VDD
IDD
3/3.6
0.0001
1
NOTES
1
Temperature ranges are as follows: B Versions –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–4–
REV. B
ADG511/ADG512/ADG513
ABSOLUTE MAXIMUM RATINGS 1
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 470 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 117°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
(TA = +25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
Analog, Digital Inputs2 . . . . . . . . . . . VSS –2 V to VDD + 2 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 900 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . 76°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . +300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG511/ADG512/ADG513 features proprietary ESD protection circuitry,
permanent damage may occur on devices subjected to high energy electrostatic discharges.
Therefore, proper ESD precautions are recommended to avoid performance degradation or loss
of functionality.
WARNING!
ORDERING GUIDE
Model1
Temperature Range2
Package Option3
ADG511BN
ADG511BR
ADG511ABR4
ADG511TQ4
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
N-16
R-16A
R-16A
Q-16
ADG512BN
ADG512BR
ADG512ABR4
ADG512TQ4
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
N-16
R-16A
R-16A
Q-16
ADG513BN
ADG513BR
ADG513ABR4
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
N-16
R-16A
R-16A
NOTES
1
For availability of MIL-STD-883, Class B processed parts, contact factory.
2
3.3 V specifications apply over 0°C to +70°C temperature range.
3
N = Plastic DIP; R = 0.15" Small Outline IC (SOIC); Q = Cerdip.
4
Trench isolated latch-up proof parts. See Trench Isolation section.
REV. B
–5–
ESD SENSITIVE DEVICE
ADG511/ADG512/ADG513
PIN CONFIGURATION
(DIP/SOIC)
IN1 1
TERMINOLOGY
VDD
VSS
Most positive power supply potential.
Most negative power supply potential in
dual supplies. In single supply applications,
it may be connected to GND.
GND
Ground (0 V) reference.
S
Source terminal. May be an input or output.
D
Drain terminal. May be an input or output.
IN
Logic control input.
RON
Ohmic resistance between D and S.
IS (OFF)
Source leakage current with the switch
“OFF.”
ID (OFF)
Drain leakage current with the switch
“OFF.”
ID, IS (ON)
Channel leakage current with the switch
“ON.”
VD (VS)
Analog voltage on terminals D, S.
CS (OFF)
“OFF” switch source capacitance.
CD (OFF)
“OFF” switch drain capacitance.
CD, CS (ON)
“ON” switch capacitance.
tON
Delay between applying the digital control
input and the output switching on.
tOFF
Delay between applying the digital control
input and the output switching off.
tD
“OFF” or “ON” time measured between the
90% points of both switches when switching
from one address state to another.
Crosstalk
A measure of unwanted signal which is
coupled through from one channel to another as a result of parasitic capacitance.
Off Isolation
A measure of unwanted signal coupling
through an “OFF” switch.
Charge Injection A measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
16 IN2
D1 2
15 D2
ADG511
ADG512
ADG513
S1 3
VSS 4
14 S2
13 VDD
TOP VIEW
GND 5 (Not to Scale) 12 NC
S4 6
11 S3
D4 7
10 D3
IN4 8
9
IN3
NC = NO CONNECT
Truth Table (ADG511/ADG512)
ADG511
In
ADG512
In
Switch
Condition
0
1
1
0
ON
OFF
Truth Table (ADG513)
Logic
Switch
1, 4
Switch
2, 3
0
1
OFF
ON
ON
OFF
–6–
REV. B
Typical Performance Graphs–ADG511/ADG512/ADG513
50
10mA
VDD = +5V
VSS = –5V
TA = +258C
1mA
100mA
VDD = +3V
VSS = –3V
30
I–, I+
ISUPPLY
RON – V
40
20
10mA
1mA
VDD = +5V
VSS = –5V
10
1 SW
4 SW
100nA
0
–5
10nA
–4
0
–3
–2
–1
1
2
3
4
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
5
10
1k
10k
100k
FREQUENCY – Hz
10M
1M
Figure 4. Supply Current vs. Input Switching Frequency
Figure 1. On Resistance as a Function of VD (VS) Dual
Supplies
10
50
VDD = +5V
VSS = –5V
LEAKAGE CURRENT – nA
40
RON – V
100
30
+1258C
+858C
20
+258C
1
VDD = +5V
VSS = –5V
VS = 65V
VD = 65V
ID (OFF)
0.1
ID (ON)
0.01
10
IS (OFF)
0
–5
–4
0
–3
–2
–1
1
2
3
4
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
0.001
25
5
35
45
55
65
75
85
95
TEMPERATURE – 8C
115
125
Figure 5. Leakage Currents as a Function of Temperature
Figure 2. On Resistance as a Function of VD (VS) for
Different Temperatures
120
90
TA = +258C
VDD = +5V
VSS = –5V
80
VDD = +3V
VSS = 0V
100
OFF ISOLATION – dB
70
RON – V
105
60
50
VDD = +5V
VSS = 0V
40
80
60
30
20
0
1
2
3
4
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
40
100
5
10k
100k
FREQUENCY – Hz
1M
Figure 6. Off Isolation vs. Frequency
Figure 3. On Resistance as a Function of VD (VS)
Single Supply
REV. B
1k
–7–
10M
ADG511/ADG512/ADG513
network RC and CC. This compensation network also reduces
the hold time glitch while optimizing the acquisition time. Using
the illustrated op amps and component values, the pedestal
error has a maximum value of 5 mV over the ± 3 V input range.
The acquisition time is 2.5 µs while the settling time is 1.85 µs.
0.008
LEAKAGE CURRENT – nA
0.004
VDD = +5V
VSS = –5V
TA = +258C
ID (ON)
0.002
ID (OFF)
0.000
IS (OFF)
+5V
2200pF
+5V
SW2
–0.002
+5V
–0.004
–0.006
–5
S
VIN
D
SW1
AD845
S
D
–5V
–4
–3
–2
–1
1
2
3
4
0
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
5
RC
75V
CC
1000pF
CH
2200pF
VOUT
OP07
–5V
ADG511
ADG512
ADG513
Figure 7. Leakage Currents as a Function of VD (VS)
–5V
Figure 9. Accurate Sample-and-Hold
110
VDD = +5V
VSS = –5V
TRENCH ISOLATION
The MOS devices that make up the ADG511A/ADG512A/
ADG513A are isolated from each other by an oxide layer
(trench) (see Figure 10). When the NMOS and PMOS devices
are not electrically isolated from each other, there exists the
possibility of “latch-up” caused by parasitic junctions between
CMOS transistors. Latch-up is caused when P-N junctions that
are normally reverse biased, become forward biased, causing
large currents to flow. This can be destructive.
CROSSTALK – dB
100
90
80
70
60
100
1k
10k
100k
FREQUENCY – Hz
1M
10M
Figure 8. Crosstalk vs. Frequency
APPLICATION
Figure 9 illustrates a precise sample-and-hold circuit. An AD845
is used as the input buffer while the output operational amplifier
is an OP07. During the track mode, SW1 is closed and the
output VOUT follows the input signal VIN. In the hold mode,
SW1 is opened and the signal is held by the hold capacitor CH.
CMOS devices are normally isolated from each other by
Junction Isolation. In Junction Isolation the N and P wells of the
CMOS transistors form a diode that is reverse biased under
normal operation. However, during overvoltage conditions, this
diode becomes forward biased. A Silicon-Controlled Rectifier
(SCR)-type circuit is formed by the two transistors, causing a
significant amplification of the current that, in turn, leads to
latch-up. With Trench Isolation, this diode is removed; the
result is a latch-up-proof circuit.
VS
Due to switch and capacitor leakage, the voltage on the hold
capacitor will decrease with time. The ADG511/ADG512/
ADG513 minimizes this droop due to its low leakage specifications. The droop rate is further minimized by the use of a polystyrene hold capacitor. The droop rate for the circuit shown is
typically 15 µV/µs.
T
R
E
N
C
H
P+
N–
VG
VD
P-CHANNEL
P+
VG
VS
T
R
E
N
C
H
N+
N-CHANNEL
P–
VD
N+
T
R
E
N
C
H
BURIED OXIDE LAYER
SUBSTRATE (BACKGATE)
A second switch, SW2, which operates in parallel with SW1, is
included in this circuit to reduce pedestal error. Since both
switches will be at the same potential, they will have a differential effect on the op amp OP07, which will minimize charge
injection effects. Pedestal error is also reduced by the compensation
Figure 10. Trench Isolation
–8–
REV. B
ADG511/ADG512/ADG513
Test Circuits
IDS
V1
S
S
A
D
D
S
A
D
VD
RON = V1/IDS
1. On Resistance
2. Off Leakage
3. On Leakage
VDD
0.1mF
3V
VDD
S
VS
D
VIN
ADG511
VIN
ADG512
VOUT
RL
300V
IN
50%
50%
50%
50%
3V
CL
35pF
90%
90%
VOUT
VSS
GND
0.1mF
VSS
tON
tOFF
4. Switching Times
VDD
0.1mF
3V
VIN
VDD
VS1
VS2
S1
D1
S2
D2
VIN
GND
50%
0V
VOUT1
VOUT2
RL2
300V
IN1, IN2
RL1
300V
50%
90%
90%
VOUT1
CL1
35pF
0V
CL2
35pF
VSS
90%
VOUT2
90%
0V
tD
0.1mF
VSS
tD
5. Break-Before-Make Time Delay
VDD
3V
VDD
RS
VS
S
D
VIN
VOUT
CL
10nF
IN
VOUT
GND
VSS
DVOUT
QINJ = CL 3 DVOUT
VSS
6. Charge Injection
REV. B
A
VS
VD
VS
VS
ID (ON)
ID (OFF)
IS (OFF)
–9–
ADG511/ADG512/ADG513
Test Circuits (continued)
VDD
VDD
0.1mF
0.1mF
VDD
VDD
S
S
D
VOUT
RL
50V
VS
VIN
50V
D
VIN1
VS
VIN2
IN
D
VOUT
GND
VSS
RL
50V
0.1mF
VSS
S
GND
0.1mF
VSS
7. Off Isolation
NC
VSS
CHANNEL TO CHANNEL
CROSSTALK = 20 3 LOG VS/VOUT
8. Channel-to-Channel Crosstalk
–10–
REV. B
ADG511/ADG512/ADG513
OUTLINE DIMENSIONS
Dimensions are shown in inches and (mm).
0.840 (21.34)
0.745 (18.92)
16
9
1
8
0.280 (7.11)
0.240 (6.10)
PIN 1
0.060 (1.52)
0.015 (0.38)
0.210 (5.33)
MAX
0.160 (4.06)
0.115 (2.93)
0.325 (8.26)
0.300 (7.62) 0.195 (4.95)
0.115 (2.93)
0.130
(3.30)
MIN
0.022 (0.558)
0.014 (0.356)
0.015 (0.381)
0.008 (0.204)
0.070 (1.77) SEATING
0.045 (1.15) PLANE
0.100
(2.54)
BSC
C1688b–0–10/99
16-Lead Plastic DIP
(N-16)
16-Lead Cerdip
(Q-16)
0.005 (0.13) MIN
0.080 (2.03) MAX
16
9
1
8
0.310 (7.87)
0.220 (5.59)
PIN 1
0.060 (1.52)
0.015 (0.38)
0.840 (21.34) MAX
0.200 (5.08)
MAX
0.200 (5.08)
0.125 (3.18)
0.023 (0.58)
0.014 (0.36)
0.100
(2.54)
BSC
0.150
(3.81)
MIN
SEATING
0.070 (1.78)
PLANE
0.030 (0.76)
0.320 (8.13)
0.290 (7.37)
15°
0°
0.015 (0.38)
0.008 (0.20)
16-Lead SOIC
(R-16A)
0.3937 (10.00)
0.3859 (9.80)
16
9
1
8
PIN 1
0.0098 (0.25)
0.0040 (0.10)
0.0500
SEATING (1.27)
PLANE BSC
REV. B
0.2440 (6.20)
0.2284 (5.80)
0.0688 (1.75)
0.0532 (1.35)
0.0192 (0.49)
0.0138 (0.35)
0.0196 (0.50)
x 458
0.0099 (0.25)
88
0.0099 (0.25) 08 0.0500 (1.27)
0.0160 (0.41)
0.0075 (0.19)
–11–
PRINTED IN U.S.A.
0.1574 (4.00)
0.1497 (3.80)