DG441B, DG442B Vishay Siliconix Improved Quad SPST CMOS Analog Switches FEATURES DESCRIPTION The DG441B, DG442B are monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG441B, DG442B are upgrades to the original DG441, DG442. Combing low on-resistance (45 , typ.) with high speed (tON 120 ns, typ.), the DG441B, DG442B are ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has been minimized on the drain for use in sample-and-hold circuits. The DG441B, DG442B are built using Vishay Siliconix’s high-voltage silicon-gate process. An epitaxial layer prevents latchup. When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off. • Halogen-free according to IEC 61249-2-21 Definition • Low On-Resistance: 45 • Low Power Consumption: 1 mW • Fast Switching Action - tON: 120 ns • Low Charge Injection - Q: - 1 pC • TTL/CMOS-Compatible Logic • Single Supply Capability • Compliant to RoHS Directive 2002/95/EC BENEFITS • • • • • Less Signal Errors and Distortion Reduced Power Supply Requirements Faster Throughput Reduced Pedestal Errors Simple Interfacing APPLICATIONS • • • • • • Audio Switching Data Acquisition Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Medical Instruments FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG441B Dual-In-Line and SOIC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 TRUTH TABLE Logic DG441B DG442B 0 ON OFF 1 OFF ON Logic "0" 0.8 V Logic "1" 2.4 V Top View ORDERING INFORMATION DG441B QFN16 (4 x 4 mm) Temp Range Package D1 IN1 IN2 D2 16 15 14 13 16-pin Plastic DIP S1 1 12 S2 V- 2 11 V+ GND 3 10 NC S4 4 9 S3 5 6 7 8 Part Number DG441BDJ DG441BDJ-E3 DG442BDJ DG442BDJ-E3 DG441BDY-E3 - 40 °C to 85 °C 16-pin Narrow SOIC DG441BDY-T1-E3 DG442BDY-E3 DG442BDY-T1-E3 16 pin QFN 4 x 4 mm DG441BDN-T1-E4 DG442BDN-T1-E4 D4 IN4 IN3 D3 Top View Document Number: 72625 S11-1350-Rev. B, 04-Jul-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441B, DG442B Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol V+ to V- Digital Unit 44 GND to VInputsa Limit 25 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first , VS, VD Continuous Current (Any Terminal) 30 Current, S or D (Pulsed at 1 ms, 10 % duty cycle ) 100 Storage Temperature - 65 to 125 16-pin Plastic DIP b Power Dissipation (Package) c 16-pin Narrow Body QFN-16 d V mA °C 470 SOICd 900 mW 850 Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/°C above 75 °C. d. Derate 12 mW/°C above 75 °C. www.vishay.com 2 Document Number: 72625 S11-1350-Rev. B, 04-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441B, DG442B Vishay Siliconix SPECIFICATIONSa (for dual supplies) Limits - 40 °C to 85 °C Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Temp.b Min.d VANALOG Full - 15 RDS(on) RDS(on) Parameter Analog Switch Symbol Analog Signal Rangee Drain-Source On-Resistance On-Resistance Match Between Channels e Typ.c Max.d Unit 15 V IS = 1 mA, VD = ± 10 V Room Full 45 80 95 IS = 1 mA, VD = ± 10 V Room Full 2 4 5 ± 0.01 0.5 5 0.5 5 0.5 10 IS(off) VD = ± 14 V, VS = ± 14 V Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) VS = VD = ± 14 V Room Full Room Full Room Full - 0.5 -5 - 0.5 -5 - 0.5 - 10 ± 0.01 ± 0.02 nA Digital Control Input Voltage Low VINL Full Input Voltage High VINH Full 2.4 Input Current VIN Low IINL Full -1 - 0.01 1 Input Current VIN High IINH Full -1 0.01 1 VIN under test = 0.8 V All Other = 2.4 V VIN under test = 2.4 V All Other = 0.8 V 0.8 V µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injectione Off Isolatione Crosstalk (Channel-to-Channel) Q OIRR XTALK SourceOff Capacitancee CS(off) Drain Off Capacitancee CD(off) Capacitancee Channel On Power Supplies CD(on) Positive Supply Current I+ Negative Supply Current I- Document Number: 72625 S11-1350-Rev. B, 04-Jul-11 Room 120 220 Room 65 120 Room -1 Room - 90 Room Room - 95 Room 4 VS = VD = 0 V, f = 1 MHz Room 16 V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V Room Full Room Full RL = 1 k, CL = 35 pF VS = 10 V, See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 RL = 50 , CL = 15 pF VS = 1 VRMS, f = 100 kHz f = 1 MHz ns pC dB 4 pF 1 5 -1 -5 µA www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441B, DG442B Vishay Siliconix SPECIFICATIONS (for single supply) Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V Limits - 40 °C to 85 °C VIN = 2.4 V, 0.8 Ve Temp.b Min.d VANALOG Full 0 RDS(on) IS = 1 mA, VD = 3 V, 8 V Turn-On Time tON Turn-Off Time tOFF Q Parameter Analog Switch Symbol Analog Signal Rangee Drain-Source On-Resistance Dynamic Characteristics Charge Injection Typ.c Max.d Unit 12 V Room Full 90 160 200 RL = 1 k, CL = 35 pF, VS = 8 V See Figure 2 Room 120 300 Room 60 200 CL = 1 nF, Vgen = 6 V, Rgen = 0 Room 4 VIN = 0 V or 5 V Room Full Room Full ns pC Power Supplies Positive Supply Current I+ Negative Supply Current I- 1 5 -1 -5 µA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHEMATIC DIAGRAM (typical channel) V+ 5 V Reg INX V- Level Shift/ Drive V+ GND V- Figure 1. www.vishay.com 4 Document Number: 72625 S11-1350-Rev. B, 04-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441B, DG442B Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 110 100 100 90 80 ±5V 80 70 R DS(on) (Ω) RDS(on) (Ω) 90 V+ = 15 V V- = - 15 V 70 ± 10 V 60 50 ± 15 V 40 ± 20 V 30 60 125 °C 85 °C 50 40 25 °C 30 - 55 °C 20 20 10 10 - 20 - 16 - 12 -8 -4 0 4 8 12 16 0 - 15 20 - 10 -5 VD – Drain Voltage (V) VD RDS(on) vs. VD and Power Supply Voltages 5 10 15 RDS(on) vs. VD and Temperature 250 2.5 225 V+ = 5 V 200 2 175 150 VTH (V) RDS(on) (Ω) 0 Drain Voltage (V) 7V 125 10 V 100 1.5 1 12 V 15 V 75 50 0.5 25 0 0 2 4 6 8 10 12 VD – Drain Voltage (V) 14 0 16 4 8 10 12 14 16 18 20 V+ Positive Supply (V) RDS(on) vs. VD and Single Power Supply Voltages Input Switching Threshold vs. Supply Voltage 80 60 6 1 nA V+ = 22 V V- = - 22 V TA = 25 °C V+ = 15 V V- = - 15 V VS, V D = ± 14 V IS, ID - Current I S, I D – Current (pA) 40 20 0 - 20 IS(off), ID(off) ID(on) 100 pA IS(off), ID(off) 10 pA - 40 - 60 - 80 - 20 - 15 - 10 5 0 5 Temperature (°C) 10 15 Leakage Currents vs. Analog Voltage Document Number: 72625 S11-1350-Rev. B, 04-Jul-11 20 1 pA - 55 - 35 - 15 5 25 45 65 Temperature (°C) 85 105 125 Leakage Currents vs. Temperature www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441B, DG442B Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 400 500 V- = 0 V 300 Switching Time (ns) Switching Time (ns) 400 300 200 200 ton ton 100 toff 100 toff 0 0 2 4 6 8 10 12 14 16 18 20 0 V+ – Positive Supply (V) Switching Time vs. Single Supply Voltage ±4 ±8 ± 12 ± 16 V+, V– Positive and Negative Supplies (V) ± 20 Switching Times vs. Power Supply Voltage 120 30 V+ = 15 V V- = - 15 V 110 20 0 OIRR (dB) Q – Charge (pC) 100 10 V+ = 15 V V- = - 15 V V+ = 12 V V- = 0 V 90 RL = 5 0Ω 80 70 - 10 60 - 20 - 30 - 15 50 40 - 10 -5 0 5 10 VANALOG – Analog Voltage (V) 10 k 15 100 k 1M 10 M f - Frequency (Hz) QS, QD - Charge Injection vs. Analog Voltage Off Isolation vs. Frequency I+ – Supply Current (mA) 4 3 2 1 0 1k 10 k 100 k 1M f – Frequency (Hz) Supply Current vs. Switching Frequency www.vishay.com 6 Document Number: 72625 S11-1350-Rev. B, 04-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441B, DG442B Vishay Siliconix TEST CIRCUITS + 15 V 3V Logic Input 50 % V+ S 10 V 0V D IN 3V GND V- tr < 20 ns tf < 20 ns 50 % VO CL 35 pF RL 1 kΩ - 15 V tOFF Switch Input VS Switch Output 0V CL (includes fixture and stray capacitance) VO 80 % 80 % tON Note: Logic input waveform is inverted for DG442. Figure 2. Switching Time + 15 V ΔV O VO V+ Rg S D INX VO IN CL 1 nF 3V V- GND OFF ON OFF (DG441B) INX OFF ON Q = ΔVO x CL OFF (DG442B) - 15 V Figure 3. Charge Injection C = 1 mF tantalum in parallel with 0.01 mF ceramic + 15 V C + 15 V C V+ S1 VS D1 V+ Rg = 50 Ω IN1 VO D2 S2 GND V- GND C V- C - 15 V - 15 V XTA LK Isolation = 20 log C = RF bypass RL IN 0 V, 2.4 V RL IN2 0 V, 2.4 V VO D Rg = 50 Ω 0 V, 2.4 V NC S VS 50 Ω Off Isolation = 20 log VS VS VO VO Figure 5. Off Isolation Figure 4. Crosstalk + 15 V C S V+ Meter IN HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D GND V- C - 15 V Figure 6. Source/Drain Capacitances Document Number: 72625 S11-1350-Rev. B, 04-Jul-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441B, DG442B Vishay Siliconix APPLICATIONS + 24 V + 15 V RL DG442B V+ I = 3A 150 Ω + 15 V VN0300 L, M IN + 15 V VIN 1/4 DG442B 10 kΩ S + + 15 V D VOUT - CH + - GND V- IN 0 = Load Off 1 = Load On - 15 V Figure 8. Open Loop Sample-and-Hold Figure 7. Power MOSFET Driver VIN H = Sample L = Hold + - VOUT + 15 V Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. V+ GAIN1 AV = 1 R1 90 kΩ GAIN2 AV = 10 R2 5 kΩ With SW4 Closed VOUT VIN GAIN3 AV = 20 R3 4 kΩ GAIN4 AV = 100 R4 1 kΩ = R1 + R2 + R3 + R4 = 100 R4 DG441 or DG442 V- GND - 15 V Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72625. www.vishay.com 8 Document Number: 72625 S11-1350-Rev. B, 04-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix QFN−16 (4 4 mm) JEDEC Part Number: MO-220 D -B- ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ Index Area (Dń2 Eń2) 4 D/2 AA E/2 BB E -ACC DD aaa C 2 X aaa C 2 X Detail A Top View // ccc C Nx 9 Seating Plane 0.08 C -C- Side View A A1 A3 D2 N L Detail B D2/2 Datum A or B N r E2/2 6 (NE-1) x e E2 2 Exposed Pad N b N N-1 8 e/2 5 e 5 5 bbb M C A B Detail A Terminal Tip Terminal Tip 1 e (ND-1) x e Even Terminal/Side 8 Odd Terminal/Side Detail B Bottom View Document Number: 71921 19-Aug-02 www.vishay.com 1 Package Information Vishay Siliconix QFN−16 (4 4 mm) JEDEC Part Number: MO-220 MILLIMETERS* Dim Min Nom A 0.80 0.90 A1 0 0.02 A3 0.20 Ref AA 0.345 aaa 0.25 BB 0.345 b 0.23 0.30 bbb 0.10 CC 0.18 ccc 0.10 D 4.00 BSC D2 2.00 2.15 DD 0.18 E 4.00 BSC E2 2.00 2.15 e 0.65 BSC L 0.45 0.55 N 16 ND 4 NE 4 r b(min)/2 * Use millimeters as the primary measurement. INCHES Max Min Nom Max 1.00 0.05 0.38 - 0.0315 0 0.0091 - 0.0394 0.0020 0.0150 - 2.25 - 0.0787 - 2.25 0.0787 0.65 0.0177 - b(min)/2 0.0354 0.0008 0.0079 0.0136 0.0098 0.0136 0.0118 0.0039 0.0071 0.0039 0.1575 BSC 0.0846 0.0071 0.1575 BSC 0.0846 0.0256 BSC 0.0217 16 4 4 - Notes 5 0.0886 0.0886 0.0256 - 3, 7 6 6 ECN: S-21437—Rev. A, 19-Aug-02 DWG: 5890 NOTES: 1. Dimensioning and tolerancing conform to ASME Y14.5M-1994. 2. All dimensions are in millimeters. All angels are in degrees. 3. N is the total number of terminals. 4. The terminal #1 identifier and terminal numbering convention shall conform to JESD 95-1 SPP-012. Details of terminal #1 identifier are optional, but must be located within the zone indicated. The terminal #1 identifier may be either a molded or marked feature. The X and Y dimension will vary according to lead counts. 5. Dimension b applies to metallized terminal and is measured between 0.25 mm and 0.30 mm from the terminal tip. 6. ND and NE refer to the number of terminals on the D and E side respectively. 7. Depopulation is possible in a symmetrical fashion. 8. Variation HHD is shown for illustration only. 9. Coplanarity applies to the exposed heat sink slug as well as the terminals. www.vishay.com 2 Document Number: 71921 19-Aug-02 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 AN505 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR QFN-16 (4 x 4 MM BODY) C1 X2 16 15 14 13 E 12 1 2 C2 11 Keep Out Zone Y2 3 10 4 9 5 6 7 8 Y1 X1 Inches Millimeters C1 0.142 3.60 C2 0.142 3.60 E 0.026 0.65 X1 0.014 0.35 X2 0.089 2.25 Y1 0.037 0.95 Y2 0.089 2.25 Note: QFN-16 (4 x 4) has an exposed center pad that must not come into contact with any metalized structure on the PCB. This area is considered a Keep Out Zone. Document Number: 74976 19-Apr-07 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1