UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N60 is universally applied in active power factor correction and high efficient switched mode power supplies. FEATURES * 15A, 600V, RDS(ON)=0.44Ω @ VGS=10V * Typically 23.6pF low CRSS * High switching speed * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N60L-T47-T 15N60G-T47-T Note: Pin Assignment: G: Gate D: Drain Package TO-247 S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 G Pin Assignment 2 3 D S Packing Tube 1 of 6 QW-R502-485.a 15N60 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain to Source Voltage Gate to Source Voltage Avalanche Current (Note 1) SYMBOL RATINGS UNIT VDSS 600 V VGSS ±30 V IAR 15 A Continuous ID 15 A Continuous Drain Current 60 A Pulsed (Note 1) IDM Single Pulsed (Note 2) EAS 637 mJ Avalanche Energy Repetitive (Note 1) EAR 25.0 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation PD 312 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 40 0.4 UNIT °C/W °C/W 2 of 6 QW-R502-485.a 15N60 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS TEST CONDITIONS VGS=0V, ID=250µA, TJ=25°C ID=250μA, Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Referenced to 25°C VDS=600V, VGS=0V Drain-Source Leakage Current IDSS VDS=520V, TC=125°C Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A Forward Transconductance gFS VDS=40V, ID=7.5A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=520V, VGS=10V, Gate-Source Charge QGS ID=15A (Note 4,5) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=325V, ID=15A, RG=21.7Ω (Note 4,5) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =15A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=15A, dIF/dt=100A/μs (Note 4) Body Diode Reverse Recovery Charge QRR Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=5.23mH, IAS=15A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3. ISD ≤15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 6. Drain current limited by maximum junction temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 V 0.65 V/°C 1 10 +100 -100 µA µA nA nA 5.0 0.44 V Ω S 2380 3095 295 385 23.6 35.5 pF pF pF 48.5 14.0 21.2 65 125 105 65 nC nC nC ns ns ns ns 3.0 0.36 19.2 63.0 140 260 220 140 15 60 1.4 496 5.69 A A V ns μC 3 of 6 QW-R502-485.a 15N60 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-485.a UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) tP DUT VDD VDD VDS(t) tP www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Time 5 of 6 VER.a 15N60 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 VER.a