DIODES DMN32D2LV

DMN32D2LV
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
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SOT-563
ESD PROTECTED
Maximum Ratings
G1
S1
S2
G2
D1
TOP VIEW
Schematic and Transistor Diagram
TOP VIEW
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
ID
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Thermal Characteristics
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
PD
RθJA
TJ, TSTG
Unit
V
V
mA
400
313
-55 to +150
mW
°C/W
°C
@TA = 25°C unless otherwise specified
@ TC = 25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
30
⎯
⎯
⎯
IGSS
⎯
⎯
⎯
1
±10
±500
V
μA
μA
nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
VGS(th)
0.6
|Yfs|
VSD
⎯
⎯
⎯
100
0.5
⎯
⎯
⎯
⎯
⎯
⎯
VDS = VGS, ID = 250μA
VGS = 1.8V, ID = 20mA
VGS = 2.5V, ID = 20mA
VGS = 4.0V, ID = 100mA
VDS =10V, ID = 0.1A
VGS = 0V, IS = 115mA
Ciss
Coss
Crss
ton
toff
⎯
⎯
⎯
⎯
⎯
39
10
3.6
11
51
RDS (ON)
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
Value
30
±10
400
@TA = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
D2
Turn-on Time
Turn-off Time
1.2
V
2.2
1.5
1.2
Ω
⎯
1.4
mS
V
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
nS
nS
Test Condition
VDS = 3V, VGS = 0V
f = 1.0MHz
VDD = 5V, ID = 10 mA,
VGS = 5V
1.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMN32D2LV
Document number: DS31121 Rev. 6 - 2
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DMN32D2LV
DMN32D2LV
Document number: DS31121 Rev. 6 - 2
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DMN32D2LV
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.8
1.6
VGS = 4V
ID = 100mA
1.4
VGS = 2.5V
ID = 20mA
VGS = 1.8V
ID = 20mA
1.2
1.0
0.8
0.6
-75
-50 -25
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (C°)
Fig. 7 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
50
f = 1 MHz
40
CT, CAPACITANCE (pF)
Ciss
30
20
10
Coss
Crss
0
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
20
Ordering Information (Note 5)
Part Number
DMN32D2LV-7
Notes:
Case
SOT-563
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information (Note 6)
D2
G1
S1
DV = Product Type Marking Code (See Note 6)
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
DV YM
S2
Notes:
G2
D1
6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
DMN32D2LV
Document number: DS31121 Rev. 6 - 2
2008
V
Feb
2
Mar
3
2009
W
Apr
4
May
5
2010
X
Jun
6
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Jul
7
2011
Y
Aug
8
Sep
9
2012
Z
Oct
O
Nov
N
Dec
D
April 2010
© Diodes Incorporated
DMN32D2LV
Package Outline Dimensions
A
B
SOT-563
Dim Min
Max
Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
C
D
G
M
K
H
L
Suggested Pad Layout
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
X
DMN32D2LV
Document number: DS31121 Rev. 6 - 2
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DMN32D2LV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
DMN32D2LV
Document number: DS31121 Rev. 6 - 2
5 of 5
www.diodes.com
April 2010
© Diodes Incorporated