DMP58D0SV DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance ESD Protected Gate to 500V Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 3) “Green” Device (Note 4) Qualified to AEC-Q 101 Standards for High Reliability Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) • • • • • • SOT-563 ESD protected to 500V Maximum Ratings G1 S1 S2 G2 D1 TOP VIEW Internal Schematic TOP VIEW @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current (Note 2) Thermal Characteristics Symbol VDSS VDGR VGSS ID Continuous Continuous Value -50 -50 ±20 -160 Units V V V mA Value 400 313 -55 to +150 Units mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: D2 Symbol PD RθJA TJ, TSTG @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -50 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±5 V μA μA VGS = 0V, ID = -250μA VDS = -50V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) gFS -0.8 ⎯ 0.05 ⎯ 6 ⎯ -2.1 8 ⎯ V Ω S VDS = VGS, ID = -250μA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss ⎯ ⎯ ⎯ 27 4 1.4 ⎯ ⎯ ⎯ pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz 1. RGS ≤ 20KΩ. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added lead. 4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. DMP58D0SV Document number: DS31293 Rev. 4 - 2 1 of 5 www.diodes.com July 2009 © Diodes Incorporated DMP58D0SV 0.4 VGS = -10V 0.40 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 0.50 VGS = -4.5V 0.30 0.20 VGS = -5V 0.3 TA = 25°C 0.2 TA = 150°C T A = -55°C T A = 85°C 0.1 0.10 VGS = -2.5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 1 VGS = -5V VGS = -10V 0.01 0.1 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.5 2 2.5 3 3.5 4 -VGS, GATE SOURCE VOLTAGE (V) 4.5 Fig. 2 Typical Transfer Characteristics 10 1 0.001 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.00 VGS = -1.8V 100 T A = 125°C TA = 85°C T A = 25°C T A = -55°C 1 1 0 2.0 TA = 150°C 10 0.05 0.1 0.15 0.2 0.25 0.3 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 30 Ciss 25 VGS = -10V ID = -250mA 1.6 VGS = -5V ID = -100mA 1.4 1.2 1.0 C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 20 f = 1MHz 15 VGS = 0V 10 Coss 5 0.8 Crss 0 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP58D0SV Document number: DS31293 Rev. 4 - 2 2 of 5 www.diodes.com 0 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 40 July 2009 © Diodes Incorporated DMP58D0SV 1 VGS = 0V ID = -250µA 1.7 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.8 1.6 1.5 1.4 1.3 0.1 TA = 150°C 0.01 1.2 TA = 125°C TA = 85°C T A = 25°C 1.1 TA = -55°C 0.001 1.0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.2 0.4 0.6 0.8 1 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 RθJA (t) = r(t) * RθJA RθJA = 313°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 9 Transient Thermal Response Ordering Information (Note 6) Part Number DMP58D0SV -7 Notes: Case SOT-563 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information (Note 7) MPA Date Code Key Year Code Month Code Notes: Packaging 3000/Tape & Reel 2007 U Jan 1 2008 V Feb 2 2009 W Mar 3 Apr 4 YM MPA = Product Type Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) 2010 X May 5 2011 Y Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O 2015 C Nov N Dec D 7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). DMP58D0SV Document number: DS31293 Rev. 4 - 2 3 of 5 www.diodes.com July 2009 © Diodes Incorporated DMP58D0SV Package Outline Dimensions A B C D G M K SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm H L Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 C1 G Y X DMP58D0SV Document number: DS31293 Rev. 4 - 2 4 of 5 www.diodes.com July 2009 © Diodes Incorporated DMP58D0SV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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